• Journal of Welding and Joining
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• v.23 no.6
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• pp.72-76
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• 2005

Friction surfacing of STS304 consumable rod on S45C substrate was investigated by microstructural observation and mechanical tests. STS304 layer formed a strongly-bonded thick layer under a wide range of surfacing conditions. The highest coating eefficiency was obtained in the condition of 1000rpm-2.5mm/sec-2.5mm/sec. The hardness distribution showed the peak value in the boundary layer and as the consumable rotation speed increased, the boundary layer also hardness increasing. As the consumable rotation speed and the traveling speed increased, the coating efficiency tended to decrease. On the other hand, as the feeding speed increased, the coating efficiency appeared to be increased. The new Fe-Cr-Ni alloy layer is showed in the interface layer on $5\~15{\mu}m$ width. After friction surfacing, corrosion resistance of STS 304 surfacing layers were equaled to that of STS304 consumable rod.

• Current Photovoltaic Research
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• v.6 no.4
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• pp.109-118
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• 2018

Silicon (Si) solar cells are the most successful technology which are ruling the present photovoltaic (PV) market. In that essence, multijunction (MJ) solar cells provided a new path to improve the state-of-art efficiencies. There are so many hurdles to grow the MJ III-V materials on Si substrate as Si with other materials often demands similar qualities, so it is needed to realize the prospective of Si tandem solar cells. However, Si tandem solar cells with MJ III-V materials have shown the maximum efficiency of 30 %. This work reviews the development of the III-V/Si solar cells with the synopsis of various growth mechanisms i.e hetero-epitaxy, wafer bonding and mechanical stacking of III-V materials on Si substrate. Theoretical approaches to design efficient tandem cell with an analysis of state-of-art silicon solar cells, sensitivity, difficulties and their probable solutions are discussed in this work. An analytical model which yields the practical efficiency values to design the high efficiency III-V/Si solar cells is described briefly.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.47 no.4
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• pp.406-412
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• 2014

To evaluate the influence of burrowing substrate on the rearing performance and ambicoloration of cultured flounder, Paralichthys olivaceus, we compared the daily food intake (DFI), feed efficiency (FE), survival, growth, proportion of pigmented skin on the blind side, and proportion of ambicolored fish. We reared juvenile flounders [total length (TL) $4.46{\pm}0.06cm$, body weight (BW) $0.77{\pm}0.03g$] in dark-green fiberglass-reinforced plastic (FRP) aquariums without (control) or with gravel substrate at a density of 200 fishes/ton for 120 days. While there was no difference in survival rate or growth, the DFI was lower and FE higher in the group raised with substrate than in the control. The proportions of pigmented area on the blind side and ambicolored fish were significantly higher in the control tank. Therefore, the supplement of substrate on the aquarium bottom positively affects the feeding efficiency, and inhibits abnormal pigmentation on the blind side in flounder farming at high density.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.487-491
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• 2015

In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is $70{\mu}m/5{\times}10^{-6}sec$. That is, for materials with a minority carrier recombination lifetime longer than $5{\times}10^{-6}sec$, the substrate must be thicker than $70{\mu}m$, while for materials with a lifetime shorter than $5{\times}10^{-6}sec$, the substrate must be thinner than $70{\mu}m$. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.294-294
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• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.35-40
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• 2008

In OLED vacuum evaporation process, the essential requirements include good uniformity of the film thickness over a glass substrate. And, it is commercially significant to improve the consuming efficiency of material of the evaporant which is deposited on the substrate because of high price of organic materials. In this paper, to achieve the better thickness uniformity and the better organic material consuming rate, a process optimization algorithm was developed by understanding vacuum evaporation process parameters that affect the material consuming efficiency and the uniformity of film thickness. Based on the method developed in this study, the vacuum evaporation process of OLED was successfully controlled. The developed method allowed the manufacture of high quality OLED displays with cheaper fabrication cost.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4757-4761
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• 2012

LED chip on board(COB) package has been fabricated using aluminum substrate and aluminum anodization process. An alumina layer, used as a dielectric in COB substrate, is produced on aluminum substrate by selective anodization process. Also, selective anodization process makes it possible to construct a thermal via with a fully-filled via hole. Two types of the COB package are fabricated in order to analyze the effects of their substrate types on thermal resistivity and luminous efficiency. The aluminum substrate with the thermal via shows more improved measurement results compared with the alumina substrate. These results demonstrate that selective anodization process and thermal via can increase heat dissipation of COB package in this work. In addition, it is proved experimentally that these parameters also can be enhanced using efficient layout of multiple chip in the COB package.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.381-385
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• 2008

We have analyzed the effect of the substrate removal and packaging schemes on light output characteristics in InGaN/Sapphire LEDs. The removal of the sapphire substrate helps to dissipate the heat generated in the junction, but the advantage comes only with the detrimental effect of degrading the photon extraction efficiency. If the substrate-removed chip is attached to a metallic mount with good thermal conductivity, the maximum driving current is increased drastically, producing significantly increased light output and therefore compensating the photon extraction efficiency degradation. On a dielectric mount with a relatively poor thermal conductivity, however, it produces smaller light output, over most input current range, than the regular type of chips with the sapphire substrate remaining. Thus, for low power applications, the regular chips may be preferred over the substrate-removed chips, regardless of the chip mounts employed.