• Title/Summary/Keyword: Substrate Efficiency

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A Study on the Treatment of a High-Strength Organic Wastewater by the Tube Type Fixed Biofilter Process (엔통형 고정상 생물막법에 의한 고농도 유기성 폐수처리에 관한 연구)

  • 손종렬;장명배;문경환
    • Journal of Environmental Health Sciences
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    • v.20 no.2
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    • pp.22-27
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    • 1994
  • This study is to discuss the factors influenced on the removal efficiency of a high-strength organic wastewaters investigated using the polypropyrene media which appropriate to attach microorganism in the tube type fixed biofilter reactor. The results obtained in the experiment were as follows: 1. The kinetics of reaction rate (k') were 0.125, 0.135, 0.155 varing initial COD 720, 1280, 1630 mg/l in batch reactor. 2. In the range of pH 4.0 ~12.0 was obtained the removal efficiency of COD higher than 85%. It was proved that variation of pH (4.0 ~12.0) was nothing to do with the removal efficiency of substrate in continuous reactor. 3. Temperature to obtain removal efficiency of COD higher than 85% was 10 ~ 40$\circ$C. Removal efficiency of COD was no less than those at high temperature. 4. In the continuous reactor, the volumetric loading of COD for removal efficiency higher than 95% had to be 0.5~1.5 kg COD/m$^3$.d below. And then the HRT was 8 hrs. 5. In comparison with the activated sludge process, the tube type fixed biofilter process was excellent in removal efficiency of substrate and sludge production rate.

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Electrical Characteristics of CdS/CdTe Heterojunction Solar Cells (CdS/CdTe 이종접합 태양전지의 전기적특성)

  • Song, Woo-Chang;Lee, Jae-Hyoung;Nam, Jun-Hyun;Park, Yong-Kwan
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1174-1177
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    • 1995
  • In this paper, electrical properties CdS/CdTe heterojunction solar cell prepared by electron beam evaporation method were investigated. Crystal structure of CdS films deposited at substrate temperature of $50{\sim}250^{\circ}C$ was hexagonal type with preferential orientation of the (002)plane parallel to the substrate. Optical transmittance of the CdS film is increasing and resistivity is decreasing with increasing subsrate temperature. CdS/CdTe Solar cell characteristics were improved by increasing of substrate and annealing temperature. However, low efficiency due to small Jsc, Voc below 0.3 $mA/cm^2$ and 430 mV are observed. Low efficiency is contributed to be high resistance of CdTe films and contact.

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Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate

  • Yoo, Chang-Hyun;Kim, Jung-Hyun
    • ETRI Journal
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    • v.32 no.2
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    • pp.327-329
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    • 2010
  • A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm ${\times}$ 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.

Preparation and Photovoltaic Properties of the CdTe and CdS-CdTe heterojunction (CdTe와 CdS-CdTe 이종접합 제작과 그 광전특성)

  • Kim, Seong-Ku;Park, Gye-Choon;Lee, Jean
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.49-54
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    • 1992
  • Devices of ITO/CdS/CdTe/Te/Al were prepared by Electron-Beam deposition under a vacuum of $7{\times}10^{-6}$[torr]. Optical, Electrical, Structural and Photovoltaic properties of thin film CdS/CdTe at substrate. temperature 300~500[$^{\circ}C$] were also investigated, The structure of CdTe films deposited was of the zincblende type a preferential orientation of the (111) plane parallel to the substrate, the CdTe dark resistivity was about $10^6[{\Omega}cm]$. The conversion, efficiency of the cell increased with increasing substrate temperature. The best-fabricated Cell was a conversion efficiency of 9.1[%].

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Neutral Beam assisted Chemical Vapor Deposition at Low Temperature for n-type Doped nano-crystalline silicon Thin Film

  • Jang, Jin-Nyeong;Lee, Dong-Hyeok;So, Hyeon-Uk;Yu, Seok-Jae;Lee, Bong-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.52-52
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    • 2011
  • A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

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Effect of SiO2 Layer of Si Substrate on the Growth of Multiwall-Carbon Nanotubes (실리콘 기판의 산화층이 다중벽 탄소나노튜브 성장에 미치는 영향)

  • Kim, Geum-Chae;Lee, Soo-Kyoung;Kim, Sang-Hyo;Hwang, Sook-Hyun;Choi, Hyon-Kwang;Jeon, Min-Hyon
    • Korean Journal of Materials Research
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    • v.19 no.1
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    • pp.50-53
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    • 2009
  • Multi-walled carbon nanotubes (MWNTs) were synthesized on different substrates (bare Si and $SiO_2$/Si substrate) to investigate dye-sensitized solar cell (DSSC) applications as counter electrode materials. The synthesis of MWNTs samples used identical conditions of a Fe catalyst created by thermal chemical vapor deposition at $900^{\circ}C$. It was found that the diameter of the MWNTs on the Si substrate sample is approximately $5{\sim}10nm$ larger than that of a $SiO_2$/Si substrate sample. Moreover, MWNTs on a Si substrate sample were well-crystallized in terms of their Raman spectrum. In addition, the MWNTs on Si substrate sample show an enhanced redox reaction, as observed through a smaller interface resistance and faster reaction rates in the EIS spectrum. The results show that DSSCs with a MWNT counter electrode on a bare Si substrate sample demonstrate energy conversion efficiency in excess of 1.4 %.

Substrate Removal Condition in Activated Sludge Process of Wastewater from Acetaldehyde Manufacturing Plant (Acetaldehyde폐수의 활성오이법에 의한 기질제거조건)

  • 금영일;금두조
    • Journal of environmental and Sanitary engineering
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    • v.8 no.1
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    • pp.107-116
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    • 1993
  • This study is conducted to investigate treatability by activated sludge process for wastewater from acetaldehyde manufacturing plant. The optimum hydraulic retention time in aeration tank for removal of high strength substrate were measured. The removal efficiency were checked out by hydraulic retention time : 35hr., 40hr. and 45hr., respectively. $COD_{Cr}$, like substances were removed in all hydraulic retention time zone directed for efficiency, but non-biodegradable substances were remained. $COD_{Cr}$ biomass loading was 0.81kg $COD_{Cr}/kgMLVSS$ . day at 35hr. of retention time, 0.34 kg$COD_{Cr}$/kg MLVSS . day at 40hr., and O.l9kg$COD_Cr$/kgMLVSS . day at 45hr. And the mean $COD_{Cr}$, removal efficiency was 65.5%, 81.6% and 83.0%, respectively. And also $COD_{Cr}$, volume loading was 1.01kg$COD_{Cr}/m^3$ day, 0.87kg$COD_{Cr}/m^3$ - day, and 0.79kg$COD_{Cr}/m^3{\cdot }$day, respectively. The basic design parameter obtained is as fallows. The value of Specific substrate removal rate coefficient (k), Yield coefficient(Y) and Decay coefficient($k_d$) was $0.0013day^{-1}$, $0.505kgMLVSS/kgCOD_{Cr}$ and $0.040day^{-1}$, respectively.

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Enhancement in the light extraction efficiency of 405 nm light-emitting diodes by adoption of a Ti-Al reflection layer (Ti-Al 반사막을 이용한 405 nm LED의 광추출 효율 향상)

  • Kim, C.Y.;Kwon, S.R.;Lee, D.H.;Noh, S.J.
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.211-214
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    • 2008
  • GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

Anti-Reflection Thin Film For Photoelectric Conversion Efficiency Enhanced of Dye-Sensitized Solar Cells (염료감응형 태양전지의 광전변환효율 향상을 위한 무반사 박막)

  • Jung, Haeng-Yun;Ki, Hyun-Chul;Hong, Kyung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.814-818
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    • 2016
  • DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.