• 제목/요약/키워드: Substrate Efficiency

검색결과 1,026건 처리시간 0.031초

PN 접합형 Photodiode 제작에 관한 연구 (A Study on Fabrication of PN Junction Type Si Photodiode)

  • 조호성;오종환;홍창희
    • 대한전자공학회논문지
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    • 제26권11호
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    • pp.1652-1657
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    • 1989
  • In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

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Large Area Plasma Characteristics using Internal Linear ICP (Inductively Coupled Plasma) Source for the FPD processing

  • Kim, Kyong-Nam;Lim, Jong-Hyeuk;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.544-547
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    • 2006
  • In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

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인장하중 하에서 복합재 적층 패치의 3 차원 응력 해석 (Three-dimensional stress analysis of composite laminates patches under extension load)

  • 이재훈;조맹효;김흥수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.652-657
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    • 2008
  • A stress distribution of composite laminates patches is obtained by using the Kantorovich method when the substrate is under uniaxial load. The analysis is based on the stress function approach and uses the complementary virtual work principle. The three-dimensional stresses satisfy the traction free conditions at the free edges and the top surfaces of the patch. The stress of the bottom surfaces of the patch is obtained from equilibrium equation of patch and substrate. To demonstrate the efficiency and validity of the proposed analysis, numerical examples for cross-ply and quasi-isotropic laminates are included. The present method provides accurate stresses in the interior and near the free edges of composite laminate patches.

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Fabrication of Organic Photovoltaics Using Transparent Conductive Films Based on Graphene and Metal Grid

  • Kim, Sung Man;Walker, Bright;Seo, Jung Hwa;Kang, Seong Jun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.441-441
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    • 2014
  • The characteristics of hybrid conductive films based on multilayer graphene and silver grid have been investigated for the high-performance and flexible organic solar cells. The hybrid conductive films have been prepared on glass and polyethylene terephthalate (PET) substrates using conventional photolithography process and transfer process of graphene. The optical and electrical properties of prepared conductive films show transmittance of 87% at 550nm and sheet resistance of $28{\Omega}/square$. The electromechanical properties were also investigated in detail to confirm the flexibility of the hybrid films. OSCs have been fabricated on the hybrid conductive films based on graphene and silver grid on glass substrate. The power conversion efficiency of 2.38%, a fill factor of 51%, an open circuit voltage of 0.58V and a short circuit current of $8.05mA/cm^2$ were obtained from the device on glass substrate. The PCE was enhanced 11% compared with OSCs on the MLG films without silver grid.

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염료감응 태양전지용 고성능 탄소 상대전극 제작 (Fabrication of High-performance Carbon Counter Electrode for Dye-sensitized Solar Cells)

  • 장연익;이승용;김동환;박종구
    • 한국분말재료학회지
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    • 제14권1호
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    • pp.44-49
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    • 2007
  • In the fabrication of dye-sensitized solar cells (DSSCs), carbon counter electrode has been tested for replacing the platinum counter electrode which has two drawbacks: limited surface area and high material cost. Poor mechanical stability of carbon layer due to weak bonding strength to electrically conductive TCO (transparent conducting oxide) glass substrate is a crucial barrier for practical application of carbon counter electrode. In the present study a carbon counter electrode with high conversion efficiency, comparable to Pt counter electrode, could be fabricated by adaption of a bonding layer between particulate carbon material and TCO substrate.

솔잎추출액을 이용한 Microcystis aeruginosa 제거 연구 (Removal of Microcystis aeruginosa using Pine Needle Extracts)

  • 최희정
    • 한국물환경학회지
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    • 제33권1호
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    • pp.8-14
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    • 2017
  • Microcystis aeruginosa (M. aeruginosa) is a cyanobacterium species that can form harmful algal blooms in freshwater bodies worldwide. The use of pine needle extract (PNE) to control nuisance algae by allelopathic inhibition will be environmentally friendly and promising. PNE removed successfully upto 98% of M. aeruginosa at the following optimal conditions: pH 7, $25^{\circ}C$ of temperature, 100 rpm of mixing rate, 5 min of mixing time. These results was indicated that the amount of 1 g/L PNE was removed 1g dryweight/L of M. aeruginosa. The kinetic data showed substrate inhibition kinetics and maximum growth rate was obtained when the M. aeruginosa was grown in medium containing 0.5 g/L of initial concentration of PNE. Different substrate inhibition models were fitted to the kinetic data and found the Luong model was best. The model predicted kinetic parameters were in agreement with the experimental findings. The natural extract, PNE, can be a promising inhibition due to its high efficiency and low dose requirements.

Strong Red Photoluminescence from Nano-porous Silicon Formed on Fe-Contaminated Silicon Substrate

  • Kim, Dong-Lyeul;Lee, Dong-Yul;Bae, In-Ho
    • Transactions on Electrical and Electronic Materials
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    • 제5권5호
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    • pp.194-198
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    • 2004
  • The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

ZnO/n-Si 저가 박막태양전지의 특성연구 (A Study on Characteristics of ZnO/n-Si Low Cost Solar Cells)

  • 백두고;조성민
    • 태양에너지
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    • 제19권1호
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    • pp.29-36
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    • 1999
  • ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

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ITO/TiO$_2$/Se 태양전지의 전기적특성에 관한 연구 (Electrical Properties of ITO/TiO$_2$/Se Solar Cell)

  • 문수경;박현빈;구할본;김태성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.114-116
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    • 1992
  • ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.

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위성통신용 광대역 고온초전도 배열 안테나에 관한 연구 (Study on Broadband HTS Antenna Array for Satellite Communication)

  • 정동철;윤창훈
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.770-775
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    • 2004
  • Although $High-T_c $superconducting HTS antennas have high efficiency and high gain, narrow bandwidth due to the high Q is the major limitation for application of satellite communication and mobile communication. Defining bandwidth as the frequency range over which standing wave ratio (SWR) is 2:1 or less, HTS antenna bandwidths are typically less than 1 %. Thus considerable effort has been focused on developing HTS antennas for broadband operation. In this work the HTS antenna array, using the bipin antenna which consisted of two triangle-radiation patches, was designed and fabricated using a ${YBa}_2{Cu}_3{O}_7x (YBCO)$ superconducting thin film on a MgO substrate for broadband operation. Also gold antennas with the same dimension as our HTS antennas were fabricated on the MgO substrate for the comparison. Experimental results for both antennas were reported in terms of radiation patterns, return losses, bandwidths and other various characteristics. The center frequency of HTS antennas was 20.28 GHz and the bandwidth obtained was significant 10 %.