• 한국환경복원기술학회지
• /
• 제14권5호
• /
• pp.53-67
• /
• 2011

The major objective of this study was to quantify the effects of substrate depth and substrate composition on the development of sedum etc., in a sloped rooftop (6 : 12 pitch) environment during a 4-year period. The experiment was conducted from 2006 October to 2010 December under several conditions without soil erosion control : two substrate depth (5cm, 10cm), four substrate composition (A5N3C2, A3N3C4, A6C4, G5L3C2: A: artificial lightweight soil, N : natural soil, G : granite decomposed soil, C : leave composite, L : loess), four sloped roof direction ($E40^{\circ}W$, $W40^{\circ}N$, $S40^{\circ}W$, $N40^{\circ}E$). In this experiment 4 sedum etc., were used: Sedum sarmentosum, Sedum kamtschaticum, Sedum rupestre, Sedum telephium, flowering herbs (mixed seed : Taraxacum platycarpum, Lotus corniculatus, Aster yomena, Aster koraiensis), western grasses (mixed seed : Tall fescue, Creeping redfescue, Bermuda grass, Perennial ryegrass). The establishment factor had two levels : succulent shoot establishment (sedum), seeding (flowering herbs, western grasses). 1. Enkamat, as it bring about top soil exfoliation, was unsuitable material for soil erosion control. 2. Sedum species exhibited greater growth at a substrate depth of 10cm relative to 5cm. All flowering herbs and western grasses established only at a substrate depth of 5cm were died. A substrate depth of 5cm was not suited in sloped rooftop greening without maintenance. If additional soil erosion control will be supplemented, a substrate depth of 10cm in sloped rooftop greening without maintenance was considered suitable. 3. For all substrate depth and composition, the most abundant species was Sedum kamtschaticum. The percentage of surviving Sedum kamtschaticum was 73.4% at a substrate depth of 10cm in autumn 2007 one year after the roof vegetation had been established. But the percentage of surviving other sedum were 33.3%~51.9%, therefor mulching for soil erosion control was essential after rooftop establishment in extensive sloped roof greening was proved. To raise the ratio of plant survival, complete establishment of plant root at substrate was considered essential before rooftop establishment. 4. There was a significant interaction between biomass and substrate moisture content. There were also a significant difference of substrate moisture and erosion among substrate composition. The moisture content of A6C4 was highest, the resistance to erosion of A5N3C2 was highest among substrate composition. The biomass of plants were not significantly higher in A5N3C2 and A6C4 relative to A3N3C4 and G5L3C2, For substrate moisture and erosion resistance, A5N3C2 and A6C4 were considered suitable in sloped rooftop greening without maintenance. 5. There were significant difference among roof slope direction on the substrate moisture. Especially, the substrate moisture content of $S40^{\circ}W$ was lower relative to that of $N40^{\circ}E$, that guessed by solar radiation and erosion.

• 한국전기전자재료학회논문지
• /
• 제11권9호
• /
• pp.711-717
• /
• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• 한국정보통신학회논문지
• /
• 제16권10호
• /
• pp.2247-2252
• /
• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• Mycobiology
• /
• 제43권4호
• /
• pp.423-434
• /
• 2015

The study was conducted to compare the effects of different agro-wastes on the growth, yield, and nutritional composition of oyster mushrooms Pleurotus ostreatus (PO) and Pleurotus cystidiosus (PC). Seven substrate formulas including sawdust (SD), corncob (CC), sugarcane bagasse (SB) alone and in combination of 80 : 20, 50 : 50 ratio between SD and CC, SD and SB were investigated. The results indicated that different substrate formulas gave a significant difference in total colonization period, characteristics of fruiting bodies, yield, biological efficiency (BE), nutritional composition and mineral contents of two oyster mushrooms PO and PC. The results showed that increasing CC and SB reduced C/N ratio, and enhanced some mineral contents (Ca, P, and Mg) of substrate formulas. The increased amount of CC and SB of substrate formulas enhanced protein, ash, mineral contents (Ca, K, Mg, Mn, and Zn) of fruiting bodies of both mushrooms. Substrates with 100% CC and 100% SB were the most suitable substrate formulas for cultivation of oyster mushrooms PO and PC in which they gave the highest values of cap diameter, stipe thickness, mushroom weight, yield, BE, protein, fiber, ash, mineral content (Ca, K, and Mg) and short stipe length. However, substrate formula 100% CC gave the slowest time for the first harvest of both mushrooms PO and PC (46.02 days and 64.24 days, respectively). It is also found that the C/N ratio of substrate formulas has close correlation with total colonization period, mushroom weight, yield, BE and protein content of mushroom PO and PC.

• 한국연소학회지
• /
• 제8권2호
• /
• pp.50-55
• /
• 2003

Synthesis of carbon nanofibers on a metal substrate by an ethylene fueled inverse diffusion flame was observed. Stainless steel plates were used for the catalytic metal substrate. The effects of radial distance and residence time of the substrate were investigated. The role of hydrocarbon composition in the fuel was also viewed. Nanofibers with a diameter range of 30-70nm were found on the substrate. The carbon nanofibers were formed and grown in the region from 4 to 5.5mm from the central axis of a flame outside of the visible flame front in the radial direction. The minimum residence time required for the formation of carbon nanofibers were about 20 seconds, and over 60 seconds were required for the full-scale growth. The characteristic time of the formation of carbon nanofibers was much shorter than that of the substrate temperature growth. In this study, the variation in hydrocarbon composition had no significant effect on the formation and growth of the carbon nanofibers.

• 한국표면공학회지
• /
• 제28권6호
• /
• pp.368-375
• /
• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• 한국버섯학회지
• /
• 제13권4호
• /
• pp.301-304
• /
• 2015

본 연구는 잎새버섯 병 재배시 적합한 배지조성비율을 구명하고자 수행되었다. 배지조성은 참나무톱밥: 옥수수피: 건비지를 건물중량 비율로 T1처리(67:11:22), T2처리(68:15:17), T3처리(74:14:12)의 3처리를 두고 시험한 결과, 발이율은 T1처리에서 72.6%, T2처리에서 72.1%로 두 처리 간 유의적 차이가 없었으나 T3처리에서는 65.8%로서 다른 두 처리에 비하여 낮았다. 이병률은 T2처리에서 4.1%, T3처리에서 3.7%인데 비하여 T1처리에서는 9.8%로 가장 높았다. 수확률은 T1처리에서 64.1%, T3처리에서 63.6%인데 비하여 T2처리에서는 70.5%로 가장 높았다. 병당 자실체 중량은 T1처리에서 85.5 g, T2처리에서 83.3 g으로 두 처리 간 유의적 차이가 없었으나 T3처리에서는 72.4 g으로 다른 두 처리에 비하여 낮았다. 입병 수 10,000병 기준으로 재배 시 수량은 T2처리에서 587 kg으로 T1처리 및 T3처리에 비하여 각각 7% 및 28%가 높았다. 따라서 잎새버섯 병재배 시 적합한 배지조성비율은 건조중량비율로 참나무톱밥: 옥수수피: 건비지가 68:15:17인 것으로 나타났다.

• 센서학회지
• /
• 제21권4호
• /
• pp.263-269
• /
• 2012

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

• 한국재료학회지
• /
• 제14권10호
• /
• pp.731-736
• /
• 2004

Herein, we report on the co-firing of a low-K wiring substrate and a middle-K functional substrate in LTCC. Firstly, we researched the sintering behavior and dielectric properties of the low-k wiring substrate comprised by alumina and glass frit with ${\varepsilon}_r$, of $\sim7$ and the middle-k functional substrate comprised by $Ba_{5}Nb_{4}O_{15}$ and glass frit with ${\varepsilon}_r$, of $20\sim30$. The warpage and delamination between the hetero layers of the low-K and the middle-K composition were also studied. In particular, physical matching of the hetero layers could be possible by adjusting of the sintering properties of the composition. We observed that an introduction of the glass frit to the low- and middle-K substrate gives rise to a minimization of an effect given by separation of the hetero layers, and modification of the fraction of the glass frit accompanied by a variation of the composition could control the sintering behavior and its beginning temperature. In the case of co-firing of the L03 as the low-K wiring substrate composition and the M03 as the middle-K functional substrate composition at $875^{\circ}C$, we could fabricate a desirable structure of hetero layers without any kinds of structural defects such as separation, warpage, delamination, pore trap, etc. We suppose that the co-firing techniques described in this study would provide a helpful method to fabricate a LTCC multi-functional for the next generation.

• Transactions on Electrical and Electronic Materials
• /
• 제11권2호
• /
• pp.73-76
• /
• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.