Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Effect of Substrate Temperature on Electrical and Optical Properties of Al Doped ZnO Thin Films by Continuous Composition Spread

  • Jung, Keun (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Lee, Jin-Ju (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Choi, Won-Kook (Interface Control Research Center, Korea Institute of Science and Technology) ;
  • Yoon, Seok-Jin (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Choi, Ji-Won (Electronic Materials Research Center, Korea Institute of Science and Technology)
  • Received : 2012.06.12
  • Accepted : 2012.07.10
  • Published : 2012.07.31
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Abstract

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

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References

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