• 한국경영과학회지
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• 제39권2호
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• pp.141-154
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• 2014

It is widely confirmed that online retailers can obtain crucial resources and greater growth potential by depending on the external web portal sites as it is explained in resource dependence theory. Nevertheless, recent studies show that the effect of dependence may not always be beneficial for firms and stress the importance of finding relevant contingent factors. In this study, we identify and suggest that firms' age and niche width strategy, whether generalist or specialist, are contributing factors on moderating the positive relationship between resource dependence and firm growth. To test our hypotheses based on the theory, we have collected monthly web traffic data of online retailers and portals from March 2000 and July 2008. The empirical results lend support to our theory of the firm age having a negative interaction effect on web traffic dependence. Moreover, results verified that positive effect of depending on the portals may become greater if the online retailer is a specialist in terms of niche width.

• 지역사회간호학회지
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• 제10권2호
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• pp.372-386
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• 1999

The purpose of this study was to explore the degree of stress in caregivers caring for CVA patients and the level of daily living performance of CVA patients. The subjects for the study were caregivers of 112 CVA patients who enter a hospital or out-patient-department (OPD) at two Oriental medical hospital in Jeonbuk province. The survey instruments used in this study were Kang's ADL check list for daily living performance of patients and Choi's 4 sore scale for stress of caregivers. The survey was conducted from July 4th to August 30th in 1999. The survey results were analyzed with the Statistical Package for Social Science(SPSS) program and can be summarized as follows: 1. The level of daily living performance for the CVA patients was: 1) complete dependence (M=14.9, 13.1%), 2) complete independence (M=23.6, 20.9%), 3) incomplete independence (M=23.9, 21.0%), 4) incomplete dependence (M=26.6, 25%), 5) dependence and independence (M=23.0, 20.0%). The items for with there was a high level daily living performance were: 1) drinking (M=3.62), 2) eating(M=3.25). 3) position returning (M=3.18) : and the items for which there was a low level of daily living performance were: 1) ascending and descending stairs (M=2.08), 2) walking (M=2.47), 3) dressing and undressing trousers (M=2.55). 2. Degree of caregiver stress was: Mean=2.39 at 40 score. The items for which was a high level caregiver stress were: 1) medical fee (M=3.25), 2) being handicapped or recurrence (M=3.02) : and the items for which there was a low level of caregiver stress were: 1) discontinuity of patient's treatment (M = 1.98). 2) change of home atmosphere caused by patient's disease (M = 1.98), 3) desire of patient's knowing about disease (M= 1.99). 3. There was statistically significant difference in the degree of caregiver stress according to the following caregiver's demographic characteristics: education level (F=3.52, P=0.03). change of caregiver (F=5.41. P=0.02). 4. There was a statistically signifiant difference in the level of daily living performance according to the CVA patients demographic characteristics: patient's paralytic status (F=4.48, P=0.01), duration of disease (t=2.76, P=0.03). 5. There was significant difference in degree of caregiver stress according to the CVA patient's demographic characteristics: CVA status (F=4.75, P=0.01). 6. There was statistically significant difference in the degree of caregiver stress according to the level of daily living performance in CVA patients(r=-0.482, P<0.00).

• 동서간호학연구지
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• 제19권2호
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• pp.177-185
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• 2013

Purpose: This study was to identify the relations between stress and health locus of control in nursing college students. Methods: A total of 243 subjects aged between 17 and 27 were selected through convenient sampling. Data were collected with a self reported questionnaire from March 2 to 25, 2013. Collected data were analyzed with SPSS/PC Win 15.0. Results: Differences in stress and health locus of control according to general characteristics were as follows. Stress were significantly different according to gender (t=-2.51, p<.05), grade (F=5.40, p<.01), school record (F=5.72, p<.01), stress solving methods (F=2.62, p<.05). Internal health locus of control was significantly different according to gender (t=2.30, p<.05), grade (F=14.73, p<.001), religion (F=4.63, p<.01), school record (F=5.29, p<.01), economic state (F=5.50, p<.001) and smoking (F=4.17, p<.05). Chance health locus of control was significantly different according to sibling rank (F=2.86, p<.05). Except chance health locus of control, internal heath locus of control and dependence health locus of control have a negative correlation with stress. 15.6% of variance in stress was explained by dependence health locus of control, chance health locus of control, and grade. Conclusion: The findings of this study may be useful in understanding the stress expression of nursing college students and developing more specific programs on personality and self-control.

• 한국농공학회논문집
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• 제52권3호
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• pp.73-79
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• 2010

In the present study, the loading frequency dependencies of cyclic shear strength and elastic shear modulus of reconstituted clay were examined by performing undrained cyclic triaxial tests and undrained cyclic triaxial tests to determine deformation properties. The result of undrained cyclic triaxial test of reconstituted and saturated clay shows that a faster frequency leads to higher stress amplitude ratio, but when the frequency becomes fast up to a certain point, the stress amplitude ratio will reach its maximum limit and the frequency dependence becomes insignificant. And also, the result of undrained cyclic triaxial deformation test shows a fact that a faster loading frequency leads to higher equivalent shear modules and smaller hysteresis damping ratio, and confirms the frequency dependence of cohesive soil. Meanwhile, the result of the creep test shows that continuing creep is created in the undrained cyclic triaxial test with slow loading frequency rate, and since loading rate becomes slower at the vicinity of the maximum and the minimum deviator stress due to sine wave loading, the vicinity of the maximum and the minimum deviator stress shall be more influenced by creep.

• 한국지진공학회논문집
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• 제24권6호
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• pp.253-266
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• 2020

The extended slip-weakening model was investigated by using a compiled set of source-spectrum-related parameters, i.e. seismic moment M_o, S-wave velocity V_s, corner-frequency f_c, and source-controlled high-cut frequency fmax, for 113 shallow crustal earthquakes (focal depth less than 25 km, M_W 3.0~7.5) that occurred in Japan from 1987 to 2016. The investigation was focused on the characteristics of stress drop, radiation energy-to-seismic moment ratio, radiation efficiency, and fracture energy release rate, G_c. The scaling relationships of those source parameters were also investigated and compared with those in previous studies, which were based on generally used singular models with the dimensionless numbers corresponding to f_c given by Brune and Madariaga. The results showed that the stress drop from the singular model with Madariaga's dimensionless number was equivalent to the breakdown stress drop, as well as Brune's effective stress, rather than to static stress drop as has been usually assumed. The scale dependence of stress drop showed a different tendency in accordance with the size category of the earthquakes, which may be divided into small-moderate earthquakes and moderate-large earthquakes by comparing to M_o = 10¹⁷~10¹⁸ Nm. The scale dependence was quite similar to that shown by Kanamori and Rivera. The scale dependence was not because of a poor dynamic range of recorded signals or missing data as asserted by Ide and Beroza, but rather it was because of the scale dependent V_r-induced local similarity of spectrum as shown in a previous study by the authors. The energy release rate G_c with respect to breakdown distance D_c from the extended slip-weakening model coincided with that given by Ellsworth and Beroza in a study on the rupture nucleation phase; and the empirical relationship given by Abercrombie and Rice can represent the results from the extended slip-weakening model, the results from laboratory stick-slip experiments by Ohnaka, and the results given by Ellsworth and Beroza simultaneously. Also the energy flux into the breakdown zone was well correlated with the breakdown stress drop, ${\tilde{e}}$ and peak slip velocity of the fault faces. Consequently, the investigation results indicate the appropriateness of the extended slip-weakening model.

• 대한전자공학회논문지TE
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• 제37권2호
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• pp.17-24
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.