• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권2호
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1870-1872
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• 2003

High voltage pulse generator with fast rise time has been studied theoretically and experimentally. The complexity and stray inductance of a pulse generator components can be very difficult to reduce. As a result, a compact size and stable Pulse can be obtained by using a rotary air-hole. Parametric studies showed that the rise time of the output pulse was depended little on the change of the revolutions per minute(RPM) while the pulse width of the output pulse was depended greatly upon the change of the revolutions per minute (RPM).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1418-1420
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• 2003

In this study capacitance and dielectric loss tan${\delta}$were measured with frequency changes for commercial $Z_nO$ varistors with pin-type leads and equivalent circuit simulation was proposed. The leakage inductance in pin leads and the stray caoacitance could be seperated from the dielectric characteristics of $Z_nO$ varistors by the simulation of equivalent circuit. The equivalent circuit model considered semiconduction layer, dielectric layer and depletion layer as the grain boundary structure of varistor is well fitted to the observed data.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.195-197
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• 1998

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent a device induced the overvoltage above ratings by proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by control the slope of collector voltage under series connected IGBT turn-off transient. The propose gate control scheme limits the overvoltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 전력전자학회논문지
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• 제24권3호
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• pp.147-152
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• 2019

With the recent emphasis on the importance of energy conservation, studies on high-efficiency elevator systems are being continuously conducted. Therefore, pulse width modulation converters are commonly used in traction drives on elevator systems. Wide bandgap devices have been increasingly commercialized, and their application to power conversion systems, such as renewable and energy storage system, has been gradually increasing. In this study, a SiC inverter for an elevator traction drive is investigated. In particular, an inverter is designed to minimize stray and parasitic inductance. Input and output filters are designed by considering switching frequency. The designed SiC inverter reduces volume by approximately 32% compared with that of a Si inverter, and power converter efficiency is over 98.8%.

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.95-101
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• 2008

최근 발진수정자에 칩패키지를 결선한 SMD형의 적층세라믹 발진기를 많이 사용한다. 이러한 발진기들은 그 길이 및 패키지 내부의 패턴 등에 의하여 부유인덕턴스 및 기생 커패시턴스가 발생하고, 전원의 반사 및 잡음 발생으로 출력신호의 진폭감소 및 신호 손실이 발생하여 발진기 성능을 정상적으로 평가할 수 없다. 본 논문에서는 발진기와 계측기의 부정합임피던스로 부터 발생한 신호 손실 및 진폭감소를 방지하기 위해 지그 회로를 개발한다. 이를 통하여 발진기의 정확한 스펙트럼 분석 및 성능을 평가함으로써 발진기의 성능향상을 기한다.

• 전력전자학회논문지
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• 제4권1호
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• pp.99-104
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• 1999

최근 산업이 대규모화함에 따라 고압 전력 변환 장치의 필요성이 증가하고 있고, 이에 따라 전력용 반도체 소자의 직렬 구동이 많이 이용되고 있다. 소자의 직렬 구동은 소자간에 적절한 전압 분배가 이루어져 개별 소자에 정격이상의 과전압이 인가되는 것을 방지하는 것이 큰 관건이다. 또한 고전압 회로에서는 부유 인덕턴스에 의한 소자의 과전압도 방지하여야 한다. 본 논문에서는 직렬 연결된 IGBT의 턴-오프 과도상태시 컬렉터 전압 기울기 조절로 안정된 전압 분배와 과전압을 방지하는 새로운 게이트 구동기법을 제안한다. 제안하는 게이트 구동기법은 컬렉터 전압을 검출하여 능동적으로 게이트 신호를 제어함으로써 과전압을 제한한다. 새로운 IGBT 게이트 구동회로를 제작하고 직렬 연결된 IGBT 회로에 적용하여 게이트 구동기법의 타당성을 검증하였다.

• 한국해양공학회지
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• 제16권1호
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• pp.64-70
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• 2002

This paper shows the results of the development of a small size of digital type continuous and intermittent welding auto-carriage based on microprocessor (Intel 80196KC) for welding process with long welding line. The developed welding auto-carriage loads welding torch and tracks welding line. It is an automaton largely used for welding process with a lot of long welding lines such as shipbuilding and structure. Most traditional auto-carriages have been developed based on analog circuit for open loop control. So this analog circuit welding auto-carriage cannon control welding speed. Specially welding auto-carriage for intermittent welding condition is so complicated and has the low precision of control performance in welding distance and non-welding distance. The auto-carriage developed in this paper has the following characteristics: It has not only functions of traditional carriage but also functions such as pseudo-welding process of big iron structures, intermittent welding in order to limit heat for welding thin plates, crater treatment of the final step of welding, acceleration at the initial step of welding and deceleration in the final step of welding. The main control board of auto-carriage, power supply system and DC motor drive wee developed and manufactured. The welding speed and the welding distance of the developed auto-carriage are controlled accurately by feedback control using photo-sensor. Hardware and software robust against the heat and noise produced on the welding process are developed.

• 전자공학회논문지SC
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• 제43권4호
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• pp.45-52
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• 2006

본 연구에서는 위상잡음과 지터(jitter) 특성을 개선한 $5mm{\times}7mm$ 크기의 적층 세라믹 SMD(surface mounted device)형 VCXO를 개발한다. PECL(positive emitter coupled logic) 칩패키지를 발진수정자에 결선한 VCXO는 그 길이 및 패키지 내부의 패턴 등에 의하여 부유인덕턴스 및 기생 커패시턴스가 발생하고, 전원의 반사 및 잡음 발생으로 출력신호의 진폭 감소 및 신호 손실이 발생하여 발진기 성능을 정상적으로 평가할 수 없다. 이러한 신호 손실 및 진폭감소를 방지하기 위해 지그(Jig) 시스템을 개발하고, 이를 통하여 발진기의 정확한 스펙트럼 분석 및 성능을 평가한다. 동작전원은 3.3 V, 주파수 범위 120-180 MHz 및 Q인수는 5K이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.