• Journal of computational fluids engineering
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• v.1 no.1
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• pp.47-54
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• 1996

비유선형 물체 주위의 유동은 정체유동, 경계층 박리 및 재부착, 주기적 와열의 생성등의 복잡한 유동현상이 공존한다. 이와 같은 유동의 2-방정식 난류모델을 이용한 정확한 예측은 일반적으로 불가능 하다고 인식되어 왔으나, 본 연구에서는 기존의 비교적 단순한 난류모델을 활용한 정사각주 주위의 비정상 난류유동의 예측 가능성을 체계적으로 규명하였다. 적절한 난류모델의 선정과 더불어 시간 정확도, 공간 정확도 및 대류항 처리법 등이 해석의 결과에 미치는 영향을 살펴 보았다. 기존의 표준 κ-ε모델은 정체점 주위에서 난류생성항의 과도한 예측으로 말미암아 재부착 및 와열생성의 정확한 예측이 불가능 하였으나, RNG κ-ε 모델을 사용한 경우 이와 같은 현상을 제거 할 수 있었다. 그러나 이 경우에도 예측의 정확도가 시간 증분, 격자의 크기 및 대류항 처리법 등에 영향을 받았으며, 특별히 대류항 처리법에 따라 상당히 민감하게 변하는 것을 알 수 있었다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.329-332
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• 2004

Cast-forging process has a lot of advantages in terms of saving materials along with enhancement of mechanical properties. Therefore, this process has been taken as one of candidate process to manufacturing automotive suspension parts. Since most of cast-forging parts are made with using Al-Si alloys of high castability, the mechanical properties largely depends on the primary ${\alpha}$ and eutectic Si particles. During hot forging step these microstructural features evolve with strain increment. In the present study, the mechanical property evolution was investigated in terms of microstructual evolution with strain. Specially, fracture behavior of A356 alloy was studied to find out how to improve the mechanical properties.

• Structural Engineering and Mechanics
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• v.4 no.6
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• pp.589-600
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• 1996

An explicit 4th order time integration scheme for solving the convection-diffusion equation is discussed in this paper. A system of ordinary differential equations are derived first by discretizing the spatial derivatives of the relevant PDE using the finite difference method. The integration of the ODEs is then carried out using a 4th order scheme and a self-adaptive technique based on the spatial grid spacing. For a non-uniform spatial grid, different time step sizes are used for the integration of the ODEs defined at different spatial points, which improves the computational efficiency significantly. A numerical example is also discussed in the paper to demonstrate the implementation and effectiveness of the method.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Journal of the korean Society of Automotive Engineers
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• v.13 no.1
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• pp.57-65
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• 1991

It is experimented under rotary bending stress that the spacing of two micro hole flaws is adjacent and that it is distant. In order to observe the behavior of fatigue crack propagation, two kinds of specimens are tested under constant stress and periodic overstressing. Although the crack occurs faster when two micro-hole flaws are adjacent than when they are distant, but there is no difference of the number of fracture cycles between two. The crack propagates slower under low-high block stress than under high-constant stress, and it propagates faster under high-low block stress than under low-constant stress. The influence of two-step block stress is serious right after the stress varies.

• International Journal of Naval Architecture and Ocean Engineering
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• v.12 no.1
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• pp.85-101
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• 2020

The optimal parameters for the fluid-structure interaction analysis using the Smoothed Particle Hydrodynamics (SPH) for fluids and finite elements for structures, respectively, are explored, and the effectiveness of the simulations with those parameters is validated by solving several open surface fluid problems. For the optimization of the Equation of State (EOS) and the simulation parameters such as the time step, initial particle spacing, and smoothing length factor, a dam-break problem and deflection of an elastic plate is selected, and the least squares analysis is performed on the simulation results. With the optimal values of the pivotal parameters, the accuracy of the simulation is validated by calculating the exerted force on a moving solid column in the open surface fluid. Overall, the SPH-FEM coupled simulation is very effective to calculate the fluid-structure interaction. However, the relevant parameters should be carefully selected to obtain accurate results.

• Journal of Korean Society of Transportation
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• v.32 no.5
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• pp.441-451
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• 2014

This study proposes a novel performance measure, which is referred to as Hazardous Spacing Index (HSI), to be used for evaluating safety of traffic stream on freeways. The basic principle of the proposed methodology is to investigate whether drivers would have sufficient stopping sight distance (SSD) under limited visibility conditions to eliminate rear-end crash potentials at every time step. Both Road Weather Information Systems (RWIS) and Vehicle Detection Systems (VDS) data were used to derive visibility distance (VD) and SSD, respectively. Moreover, the K-Nearest Neighbors (KNN) method was adopted to predict both VD and SSD in estimating predictive HSIs, which would be used to trigger advanced warning information to encourage safer driving. The outcome of this study is also expected to be used for monitoring freeway traffic stream in terms of safety.

• The Journal of Engineering Geology
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• v.30 no.4
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• pp.603-615
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• 2020

The design factors of artificial recharge are determined by considering the hydrogeological characteristics of the aquifer. The optimal design factors for artificial recharge were derived after performing the injection tests step by step for each injection type (vertical well, ditch and mixed type), which were built in the test site of the study area. It was analyzed that the difference in the injection effect according to the diameter of the injection well was not large, and the 100 mm well was evaluated as appropriate in consideration of the availability and economy of land use. Since the injection effect was well maintained even in the upper rock, the depth of the injection well was proposed for the alluvial layer and the upper rock layer. On the other hand, in four cases of filter media in the ditch, it was analyzed that the penetration efficiency and the hydraulic interference effect indicated excellent injection performance when a filter medium of 10 to 30 mm diameter was filled in the ditch. In addition, the proper spacing of the injection wells was analyzed as 9~12 m considering the interference efficiency. The interference efficiency attenuation coefficient per 1 m of hole spacing was calculated to be 1.75% in this area. In the future study, the artificial recharge design factors obtained in this stage are applied and verified on site construction and operation. Also it is expected to contribute to securing water in areas where there is always a lack of water.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.