• Title/Summary/Keyword: State of Charge

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Advanced Features of Static Inverter and Their Influence on Rail Infrastructure and Vehicle Maintenance

  • Bachmann, G.;Wimmer, D.
    • International Journal of Railway
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    • v.1 no.3
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    • pp.94-98
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    • 2008
  • Static inverters are essential devices onboard of rolling stock. State-of-the-art static inverters have an impact on both rail infrastructure and vehicle maintenance due to their new topology with new features. The paper describes two important aspects as examples of new features available in state-of-the-art static inverters: active input current control and the effects on the rail infrastructure as well as the detection of the state of charge and the state of health of batteries to simplify vehicle maintenance.

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A Study on the Si-SiO$_2$Interface State Characteristics of Nonvolatile SNOS FET Memories using The Charge Pumping Method (Charge Pumping 방법을 이용한 비휘발성 SNOS FET기억소자의 Si-SiO$_2$계면상태 특성에 관한 연구)

  • 조성두;이상배;문동찬;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.82-85
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    • 1992
  • In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/~5.6${\times}$10$\^$11/cm$\^$-2/~6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

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Adaptive State-of-Charge Estimation Method for an Aeronautical Lithium-ion Battery Pack Based on a Reduced Particle-unscented Kalman Filter

  • Wang, Shun-Li;Yu, Chun-Mei;Fernandez, Carlos;Chen, Ming-Jie;Li, Gui-Lin;Liu, Xiao-Han
    • Journal of Power Electronics
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    • v.18 no.4
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    • pp.1127-1139
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    • 2018
  • A reduced particle-unscented Kalman filter estimation method, along with a splice-equivalent circuit model, is proposed for the state-of-charge estimation of an aeronautical lithium-ion battery pack. The linearization treatment is not required in this method and only a few sigma data points are used, which reduce the computational requirement of state-of-charge estimation. This method also improves the estimation covariance properties by introducing the equilibrium parameter state of balance for the aeronautical lithium-ion battery pack. In addition, the estimation performance is validated by the experimental results. The proposed state-of-charge estimation method exhibits a root-mean-square error value of 1.42% and a mean error value of 4.96%. This method is insensitive to the parameter variation of the splice-equivalent circuit model, and thus, it plays an important role in the popularization and application of the aeronautical lithium-ion battery pack.

Intramolecular Hydrogen Bonding Effect on the Excited-State Intramolecular Charge Transfer of p-Aminosalicylic Acid

  • 김양희;윤민중
    • Bulletin of the Korean Chemical Society
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    • v.19 no.9
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    • pp.980-985
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    • 1998
  • The excited-state intramolecular proton transfer (ESIPT) emission has been observed for 0.01 mM p-aminosalicylic acid (AS) in nonpolar aprotic solvents as demonstrated by the large Stokes' shifted fluorescence emission around 440 nm in addition to the normal emission at 330 nm. However in aprotic polar solvent such as acetonitrile, the large Stokes' shifted emission band becomes broadened, indicating existence of another emission band originated from intramolecular charge transfer (ICT). It is noteworthy that in protic solvents such as methanol and ethanol the normal and ICT emissions are quenched as the AS concentration decreases, followed by the appearance of new emission at 380 nm. These results are interpreted in terms of ESIPT coupled charge transfer in AS. Being consistent with these steady-state spectroscopic results, the picosecond time-resolved fluorescence study unravelled the decay dynamics of the ESIPT and ICT state ca. 300 ps and ca. 150 ps, respectively with ca. 40 ps for the relaxation time to form the ICT state.

STIMULATING NEURAL ELECTRODE-A STUDY ON CHARGE INJECTION PROPERTIES OF IRIDIUM OXIDE FILMS

  • Lee, In-Seop;Ray A. Buchanan;Jim M.Williams
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.156-162
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    • 1995
  • For a stimulating neural electrode, the charge density should be as large as possible to provide adequate stimulation of the nervous system while allowing for miniaturization of the electrode. Since iridium oxide is able to produce high charge densities while preventing undesirable reactions due to charge storage, it has become a promising material for neural prostheses. Successful production of stable Ir and Ir oxide films on various substrates now limits the use of this material. Ir was deposited on two differently prepared surface of (mirror finish, passivation) surgical Ti-6AI-4V with several methods. Ion beam mixing of sputter deposited Ir films on passivated Ti-6AI-4V produced stable and good adherent Ir films. It was found that the increase in charge density of pure Ir on continuous cyclingis due to the accumulation of the oxide phase ( associated with a large surface area) in which the valence state of iridium changes and the double-layer capacitance increases. This study also showed that the double layer capacitance is equally or even more responsible for the high charge density of anodically formed Ir oxide.

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Charge Transfer Mechanism of Electrically Bistable Switching Devices based on Polyimide

  • Lee, Gyeong-Jae;Im, Gyu-Uk;Kim, Dong-Min;Lee, Mun-Ho;Gang, Tae-Hui;Jeong, Seok-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.374-374
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    • 2010
  • Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

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Review on State of Charge Estimation Methods for Li-Ion Batteries

  • Zhang, Xiaoqiang;Zhang, Weiping;Li, Hongyu;Zhang, Mao
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.136-140
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    • 2017
  • The state of charge (SOC) is an important parameter in a battery-management system (BMS), and is very significant for accurately estimating the SOC of a battery. Li-ion batteries boast of excellent performance, and can only remain at their best working state by means of accurate SOC estimation that gives full play to their performances and raises their economic benefits. This paper summarizes some measures taken in SOC estimation, including the discharge experiment method, the ampere-hour integral method, the open circuit voltage method, the Kalman filter method, the neural network method, and electrochemical impedance spectroscopy (EIS. The principles of the various SOC estimation methods are introduced, and their advantages and disadvantages, as well as the working conditions adopted during these methods, are discussed and analyzed.

High-Efficiency Charge Pump for CMOS Image Sensor (CMOS 이미지 센서를 위한 고효율 Charge Pump)

  • Kim, Ju-Ha;Jun, Young-Hyun;Kong, Bai-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.50-57
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    • 2008
  • In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.