• 제목/요약/키워드: Stannic oxide

검색결과 8건 처리시간 0.02초

산화 주석 박막에 대하여 (On the Stannic Oxide Thin Film)

  • 박순자
    • 한국세라믹학회지
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    • 제13권2호
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    • pp.8-16
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    • 1976
  • The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

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BaTiO$_3$ 유전자기에 대하여 (On the BaTiO$_3$ Dielectric Ceramics)

  • 박순자
    • 한국세라믹학회지
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    • 제12권2호
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    • pp.10-14
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    • 1975
  • Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.

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$\beta$-carotene glass의 광기전력효과 (Photovoltaic effect in $\beta$-carotene glass)

  • 김의훈
    • 전기의세계
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    • 제20권4호
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    • pp.23-30
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    • 1971
  • The photovoltaic behaviors ahve been observed with a sandwich-type cell, consisting of a junction between .betha.-carotene and stannic oxide conducting layer to provide a junction electrode. In the stannic oxide and .betha.-carotene junction it was found that its electromotive forse decreased to a value smaller than the original one. This is due to a space charge formation. Photovoltage reached approximately 40mV with an irradiation energy of 250Kcal/M$^{2}$hr. It appeared that a magnitude of the photovoltaic response was proportional to the logarithm of irradiance. The time constant of the photovoltaic effect was shown to be approximately 0.7 sec. The wavelength dependence of the photovoltaic behavior was very anomalous. It is assumed that such an anomalous photoresponse depends on a internal capacitance due to some bubble during process to make a cell.

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전해도금에 의해 형성된 반도체 금속도금용 주석-납 합금피막의 첨가제 및 전해조건의 영향 (Effect of Additives and Plating Conditions on Sn-Pb Alloy Film of Semiconductor Formed by High Speed Electroplating)

  • 정강효;김병관;박상언;김만;장도연
    • 한국표면공학회지
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    • 제36권1호
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    • pp.34-41
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    • 2003
  • Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.

산화 주석 후막에 대하여 (On the Stannic Oxide Thick Film)

  • 박순자
    • 한국세라믹학회지
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    • 제12권1호
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    • pp.5-11
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    • 1975
  • Thick film resistor paste was made utilizing oxide materials such as SnO, SnO+Sb2O3, and SnO+Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

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산화물 반도체의 결정입도가 가스감도와 표면특성에 미치는 영향 (Effects of Crystallite Size on Gas Sensitivity and Surface Property of Oxide Semiconductor)

  • 송국현;박순자
    • 한국재료학회지
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    • 제3권4호
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    • pp.319-326
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    • 1993
  • Hydroxide법으로 ${\alpha}$-주산산(stannic acid)을 만든후, 하고온도를 $500^{\circ}C$~$1100^{\circ}C$로 조정하여 일차입자(Crystallite)크기가 8-54nm인 $SnO_2$ 분말을 제작하였다. 분말의 입자(drystalite)클기에 따른 분말특성와 $H_2$, CO가스(0.5v/o)에 대한 감응성 미치공기중에서의 저상변화특성에 미치는 영향을 조사하였다. 입자크기가 감소함에 따라, 분말의 FTIR 흡습특성은 증가하였으나, 격자상수는 일정하였다. 후막소자에서, $H_2$가스에 대해 최대감도를 나타내는 온도와 공기중에서 최소저항을 나타내는 온도는 입자크기가 미세해짐에 따라 점차 낮아졌다. 최소저항점과 최대감도점의 온도저하를 산소흡착종의 활성화에너지의 감소라고 유추하였고, 이러한 에너지의 감소가 미세입자에 의한 감도향상요인 중의 한가지라고 제의하였다.

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투명전도성 Tin Oxide Film의 특성 (Characteristics of Transparent and Conducting Tin Oxide Film)

  • 지창섭;문탁진;최인훈;이덕열
    • 대한화학회지
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    • 제31권1호
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    • pp.102-109
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    • 1987
  • 화학증착방법에 의해 dibutyl tin diacetate를 산소와 반응시켜 $SnO_2$박막을 slide glass에 증착시켜 각 조건에 형성된 $SnO_2$박막의 특성을 조사하였다. 본 연구에서 최적증착조건은 기판온도 420$^{\circ}C$, 증착시간 20분으로 나타났으며 증착속도는 증착시간이 증가함에 따라 증가하며 증착시간 25분이후에는 일정해졌으며 판저항의 값도 증착초기에는 감소하나 증착시간 20분이 지나면서 증가하였다. 증착온도 420$^{\circ}C$, 증착시간 20분에 형성된 박막은 두께 4000${\AA}$이며 가시광선 투과율이 90%이며 5800 ohms/${\square}$의 판저항을 가졌다. 그리고 산세척방법에 의해 표면처리한 기판과 반응기체중 수증기의 첨가는 더 좋은 특성의 투명전도성 $SnO_2$박막을 제조하는데 도움이됨을 알았다. 또한 증착막은 작은 구형의 입자들로 이루어져 있다는 것을 주사전자현미경으로 확인하였으며 X-선 회절 실험에 의해 rutile structure(tetragonal)를 갖는다는 것을 알 수 있었다.

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염화주석/camphene 슬러리의 동결건조에 의한 방향성 기공구조의 Sn 다공체 제조 (Synthesis of Aligned Porous Sn by Freeze-Drying of Tin Chloride/camphene Slurry)

  • 방수룡;오승탁
    • 한국재료학회지
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    • 제25권1호
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    • pp.27-31
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    • 2015
  • This paper proposes a novel way of fabricating aligned porous Sn by freeze-drying of camphene slurry with stannic oxide ($SnO_2$) coated Sn powders. The $SnO_2$ coated Sn powders were prepared by surface oxidation of the initial and ball-milled Sn powders, as well as heat treatment of tin chloride coated Cu powders. Camphene slurries with 10 vol% solid powders were prepared by mixing at $50^{\circ}C$ with a small amount of oligomeric polyester dispersant. Freezing the slurry was done in a Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$. Improved dispersion stability of camphene slurry and the homogeneous frozen body was achieved using the oxidized Sn powder at $670^{\circ}C$ in air after ball milling. The porous Sn specimen, prepared by freeze-drying of the camphene slurry with oxidized Sn powder from the heat-treated Sn/tin chloride mixture and sintering at $1100^{\circ}C$ for 1 h in a hydrogen atmosphere, showed large pores of about $200{\mu}m$, which were aligned parallel to the camphene growth direction, and small pores in their internal walls. However, $100{\mu}m$ spherical particles were observed in the bottom part of the specimen due to the melting of the Sn powder during sintering of the green compact.