• Current Applied Physics
• /
• v.18 no.12
• /
• pp.1546-1552
• /
• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Kyungpook Mathematical Journal
• /
• v.62 no.1
• /
• pp.119-132
• /
• 2022

Virotherapy is an effective method for the treatment of cancer. The oncolytic virus specifically infects the lyse cancer cell without harming normal cells. There is a time delay between the time of interaction of the virus with the tumor cells and the time when the tumor cells become infectious and produce new virus particles. Several types of viruses are used in virotherapy and the delay varies with the type of virus. This delay can play an important role in the success of virotherapy. Our present study is to explore the impact of this delay in cancer virotherapy through a mathematical model based on delay differential equations. The partial success of virotherapy is guarenteed when one gets a stable non-trivial equilibrium with a low level of tumor cells. There exits Hopf-bifurcation by considering the delay as bifurcation parameter. We have estimated the length of delay which preserves the stability of the non-trivial equilibrium point. So when the delay is less than a threshold value, we can predict partial success of virotherapy for suitable sets of parameters. Here numerical simulations are also performed to support the analytical findings.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.481-486
• /
• 2023

Anomaly detection holds paramount significance across diverse fields, encompassing fraud detection, risk mitigation, and sensor evaluation tests. Its pertinence extends notably to the military, particularly within the Warrior Platform, a comprehensive combat equipment system with wearable sensors. Hence, we propose a data-compression-based anomaly detection approach tailored to unlabeled time series and sequence data. This method entailed the construction of two distinctive features, typicality and atypicality, to discern anomalies effectively. The typicality of a test sequence was determined by evaluating the compression efficacy achieved through the pattern dictionary. This dictionary was established based on the frequency of all patterns identified in a training sequence generated for each sensor within Warrior Platform. The resulting typicality served as an anomaly score, facilitating the identification of anomalous data using a predetermined threshold. To improve the performance of the pattern dictionary method, we leveraged atypicality to discern sequences that could undergo compression independently without relying on the pattern dictionary. Consequently, our refined approach integrated both typicality and atypicality, augmenting the effectiveness of the pattern dictionary method. Our proposed method exhibited heightened capability in detecting a spectrum of unpredictable anomalies, fortifying the stability of wearable sensors prevalent in military equipment, including the Army TIGER 4.0 system.

• Korean Journal of Agricultural and Forest Meteorology
• /
• v.17 no.1
• /
• pp.58-68
• /
• 2015

This study compares the wind stability of Larix kaempferi (Lamb.) Carr., Pinus koraiensis Sie. & Zucc. and Abies holophylla Maxim. to understand and inform wind risk management of these plantation trees at Daegwallyeong, Korea. Temporary square plots of $20m{\times}20m$ ($400m^2$) were laid out, and DBH (Diameter at Breast Height) and height for trees greater than 10 cm in DBH were measured by species. A total of 15 plots with 5 plots each in L. kaempferi, P. koraiensis and A. holophylla stands were sampled at random. Among the species, A. holophylla and P. koraiensis have comparatively lower h/d (Height/DBH) ratios than L. kaempferi. These results indicate that the former two species are more wind firm than the latter species. About 9% of the L. kaempferi trees have higher h/d ratios than the critical threshold limit 80. These trees are vulnerable to wind damage and should be removed in the next thinning regime. The analysis of variance detected a significant difference (p < 0.05) in the h/d ratios and Gini coefficient indicating species differences and DBH size variation, respectively. Gini coefficient was 16.4% in A. holophylla, 15.9% in P. koraiensis and 14% in L. kaempferi stands indicating limited DBH size variation. Lower h/d ratios are attributed to thinning in these stands and tree morphological differences. To increase wind firmness, low thinning should concentrate to remove trees with the h/d ratio above 80 coinciding at the time of stand distinction phase. Forest managers and practitioners should measure and maintain h/d ratios of trees below the critical threshold limit of 80 through stand density management. Variable density thinning approach should be tested to increase tree DBH sizes of the even-aged stands.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
• /
• v.6 no.3
• /
• pp.383-391
• /
• 2016

Ballast water provides stability and manoeuvrability to a ship. Foreign harmful aquatic organisms, which were transferred by ballast water, cause disturbing ecosystem. In order to minimize transference of foreign harmful aquatic organisms, IMO(International Maritime Organization) adopted the International Convention for the Control and Management of Ship's Ballast Water and Sediments in 2004. If the convention take effect, a port authority might need to check that ballast water is properly disposed of. In this paper, we propose a method of counting harmful aquatic organisms in ballast water thorough image processing. We extracted three samples from the ballast water that had been collected at Busan port in Korea. Then we made three grey-scale images from each sample as experimental data. We made a comparison between the proposed method and CellProfiler which is a well known cell-counting program based on image processing. Setting of CellProfiler is empirically chosen from the result of cell count by an expert. After finding a proper threshold for each image at which the result is similar to that of CellProfiler, we used the average value as the final threshold. Our experimental results showed that the proposed method is simple but about ten times faster than CellProfiler without loss of the output quality.

• Journal of Korea Water Resources Association
• /
• v.36 no.6
• /
• pp.949-960
• /
• 2003

The resolution issue of wetness index with relaxation of the steady state assumption is explored on the platform of Digital Elevation Model (DEM). The variabilities of the quasi-dynamic wetness index and the dynamic wetness index are discussed on the base of the spatial and statistical aspects depending upon resolutions of DEM and the drainage time. The organization patterns of the wetness index can be observed upon various drainage times and pixel size. The transient behaviour of wetness patterns of the Sulmachun watershed are shown in the relatively short drainage time. The statistical analysis of the quasi-dynamic and dynamic wetness analysis provide the convergence of analysis results to the steady state characteristics later than 10,000 hours drainage time. The probability density functions of the quasi-dynamic and the dynamic wetness index shows the existence of the threshold pixel size of DEM which provide stability and consistency in the computation result of these two wetness index.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.6
• /
• pp.328-332
• /
• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• IEMEK Journal of Embedded Systems and Applications
• /
• v.7 no.4
• /
• pp.163-172
• /
• 2012

A driver assistance system is critical to improve a convenience and stability of vehicle driving. Several systems have been already commercialized such as adaptive cruise control system and forward collision warning system. Efficient vehicle detection is very important to improve such driver assistance systems. Most existing vehicle detection systems are based on a radar system, which measures distance between a host and leading (or oncoming) vehicles under various weather conditions. However, it requires high deployment cost and complexity overload when there are many vehicles. A camera based vehicle detection technique is also good alternative method because of low cost and simple implementation. In general, night time vehicle detection is more complicated than day time vehicle detection, because it is much more difficult to distinguish the vehicle's features such as outline and color under the dim environment. This paper proposes a method to detect vehicles at night time using analysis of a captured color space with reduction of reflection and other light sources in images. Four colors spaces, namely RGB, YCbCr, normalized RGB and Ruta-RGB, are compared each other and evaluated. A suboptimal threshold value is determined by Otsu algorithm and applied to extract candidates of taillights of leading vehicles. Statistical features such as mean, variance, skewness, kurtosis, and entropy are extracted from the candidate regions and used as feature vector for SVM(Support Vector Machine) classifier. According to our simulation results, the proposed statistical feature based SVM provides relatively high performances of leading vehicle detection with various distances in variable nighttime environments.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1199-1202
• /
• 2008

High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.40-40
• /
• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.