• 한국전기전자재료학회논문지
• /
• 제11권11호
• /
• pp.984-989
• /
• 1998

The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권9호
• /
• pp.397-402
• /
• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 한국세라믹학회지
• /
• 제38권8호
• /
• pp.693-697
• /
• 2001

고상반응법으로 이론 밀도의 약 92%의 소결 밀도를 갖는 입방정계의 새로운 이온전도체 L $a_{2-x}$S $r_{x}$M $o_{2-y}$C $r_{y}$ $O_{9-{\delta}}$(x=0, 0.05, y=0, 0.1)를 제조하였다. 교류 복소임피던스는 3$50^{\circ}C$~90$0^{\circ}C$의 온도범위에서 공기중에서 측정하여, EQUIVCRT 모델링 소프트웨어로 해석하였다. 상 전이온도인 58$0^{\circ}C$ 전.후로 임피던스 스펙트럼에 큰 차이가 있었으며, 전기전도도는 L $a_2$M $o_2$ $O_{9}$ 시편의 경우 7$50^{\circ}C$에서 3$\times$$10^{-2}$ S$cm^{-1}$ /로 우수하였으며, 활성화 에너지는 고온 상 영역에서는 0.89 eV, 저온 상 영역에서는 1.12 eV이었다. 순수한 L $a_2$M $o_2$ $O_{9}$과 비교하여 Cr 치환효과는 크지 않았으나, Sr 치환 시에는 상 전이온도의 감소와 전기전도도의 증가 현상을 보였으며, 전이온도 부근에서의 전기전도도 변화 폭은 작았다.다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1001-1004
• /
• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.42-45
• /
• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
• /
• pp.87-90
• /
• 1999

We have studied the annealing effects of 570 (SrTiO$_3$) single crystal substrate and the I-V properties of step-edge junctions after Ar ion milling. YBa$_2Cu_3O_7$ (YBCO) thin films are fabricated on the substrates by using pulsed laser deposition (PLD) and photolithography. The surface of Ar ion milled substrate was characterized with atomic force microscope (AFM) and scanning electron microscope (SEM) images. After the substrate was damaged by milling, the critical current density of YBCO thin films deposited on the substrate was lowered. The annealing of the damaged substrate at about 1000 $^{\circ}C$ recovered the critical current density to that before the milling. Futhermore the annealing helped junction formation due to high quality film and increased the yield rate for the fabrication of high quality step-edge junction.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제51권11호
• /
• pp.526-530
• /
• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1456-1458
• /
• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• Journal of Preventive Medicine and Public Health
• /
• 제48권6호
• /
• pp.280-286
• /
• 2015

Objectives: Approximately 10% to 15% of lung cancer cases occur in never-smokers. Hormonal factors have been suggested to lead to an elevated risk of lung cancer in women. This systematic review (SR) aimed to investigate the association between hormonal replacement therapy (HRT) and the risk of lung cancer in women using cohort studies. Methods: We first obtained previous SR articles on this topic. Based on these studies we made a list of refereed, cited, and related articles using the PubMed and Scopus databases. All cohort studies that evaluated the relative risk of HRT exposure on lung cancer occurrence in women were selected. Estimate of summary effect size (sES) with 95% confidence intervals (CIs) were calculated. Results: A total of 14 cohort studies were finally selected. A random effect model was applied due to heterogeneity (I-squared, 64.3%). The sES of the 14 articles evaluating the impact of HRT exposure on lung cancer occurrence in women indicated no statistically significant increase in lung cancer risk (sES, 0.99; 95% CI, 0.90 to 1.09). Conclusions: These results showed that HRT history had no effect on the risk of lung cancer in women, even though the sES of case-control studies described in previous SR articles indicated that HRT had a protective effect against lung cancer. It is necessary to conduct a pooled analysis of cohort studies.

• 한국지하수토양환경학회:학술대회논문집
• /
• 한국지하수토양환경학회 2003년도 추계학술발표회
• /
• pp.435-437
• /
• 2003

In order to investigate processes and factors controlling the chemical and isotopic compositions of the Han River, seasonal studies were carried out. The North Han River was much lower in the concentrations of total dissolved solids (TDS), dissolved inorganic carbon (DIC) and major ions than the South Han River, but higher in $SiO_2$ concentration, $\delta$$^{34}$ $S_{so4}$ value and $^{87}$ Sr/$^{86}$ Sr ratio. This indicates that the chemical and isotopic compositions of the Han River were strongly controlled by the geology of their drainage basins: silicate rocks in the North Han River and carbonate rocks in the South Han River. The $\delta$$^{34}$ $S_{so4}$ values were relatively higher in the North Han River (5.90$\pm$1.46$\textperthousand$)) than in the South Han River (3.48$\pm$0.73$\textperthousand$). This implies that dissolved S $O_{4}$$^{2-}$ in the North Han River might be mostly derived from deposition of atmospheric sulfates, whereas in the South Han River from oxidation of sulfide minerals in the abandoned poly-metallic deposits and the coal-bearing sedimentary rocks distributed over the upstream as well as deposition of atmospheric sulfates. The $^{87}$ S $r^{86}$ Sr ratios in the North Han River were distinctly higher than those in the South Han River, reflecting water-rock interaction with different rock types.pes.