• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.129-133
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• 2019

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structure and surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elastic modulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS system were 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions of nitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughness and transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thin film fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, the TiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smooth surface in addition to good hydrophilic properties.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• Transactions of the Society of Information Storage Systems
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• v.3 no.4
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• pp.160-166
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• 2007

In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

• Progress in Superconductivity and Cryogenics
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• v.12 no.1
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• pp.1-5
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• 2010

Silver stabilizing layer of coated conductor has been prepared by dip coating method using organic silver complexes containing 10 wt% silver as a starting material. Coated silver complex layer was dried in situ with hot air and converted to crystalline silver by post heat treatment in flowing oxygen atmosphere. A dense continuous silver layer with good surface coverage and proper thickness of 230 nm is obtained by multiple dip coatings and heat treatments. The film heat treated at $500^{\circ}C$ showed good mechanical adhesion and crystallographic property. The interface resistivity between superconducting YBCO layer and silver layer prepared by dip coating was measured as $0.67\;{\times}\;10^{-13}\;{\Omega}m^2$. Additional protecting copper layer with the thickness of $20\;{\mu}m$ was successfully deposited by electroplating. The critical current measured with the specimen prepared by dip coating and sputtering on same quality YBCO layer showed similar value of ~140 A and proved its ability to replace sputtering method for industrial production of coated conductor.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.829-831
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• 2003

In the present study, the electroless plating method was applied instead of the sputtering as a formation method of metallic bus electrodes. No additional blackening step is needed in this method since this process provides a metallic seed layer with black color by a single step. The parameters which affects color and morphology of the metallic seed layer in the electroless plating solution were investigated

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.185-190
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• 2003

Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.1-55.1
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• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.