• 한국결정성장학회지
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• 제14권6호
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• pp.277-280
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• 2004

p형 ZnO 에피 박막을 사파이어 기판의 (0001)면 상에 RF-DC magnet co-sputtering 법으로 성장시켰다. 약 120nm두께의 단결정상 박막을 성공적으로 얻어내었다. p형 ZnO를 만들기 위해서 Al 금속 타켓을 이용하여 DC 스퍼터링으로 $400^{\circ}C$와 $600^{\circ}C$에서 ZnO를 rf magnetron sputtering으로 증착하고, 동시에 Al의 doping을 행하였으며, 성장된 박막의 결정성과 광특성에 대하여 고찰하였다.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.128-132
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• 2016

We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

• 한국표면공학회지
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• 제33권5호
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• 한국재료학회지
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• 제16권8호
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• pp.461-465
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• 2006

Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as, hardness, surface roughness and corrosion-resistance of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. Salt fog tests were used to evaluate the corrosion resistance of the samples. The deposition rate, hardness, and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power but the adhesion strength is nearly independent of the sputtering power. The deposition rate, hardness, and adhesion strength of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface and higher corrosion-resistance. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one. The sputter-deposited Cr film also has higher corrosion-resistance than the electroplated one, which may be attributed to the smoother surface of the sputter-deposited film.

• 한국표면공학회지
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• 제39권2호
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• pp.76-81
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• 2006

Molecular dynamics simulations were carried out to investigate physical sputtering of Fe(100) substrate due to energetic ion bombardments. Repulsive interatomic potentials at short internuclear distances were determined with ab initio calculations using the density functional theory. Bohr potentials were fitted to the ab initio results on diatomic pairs (Ar-Fe, Fe-Fe) and used as repulsive screened Coulombic potentials in sputtering simulations. The fitted-Bohr potentials improve the accuracy of the sputtering yields predicted by molecular dynamics for sputtering of Fe(100), whereas Moliere and ZBL potentials were found to be too repulsive and gave relatively high sputtering yields. In spite of assumptions and limitations in this simulation work, the sputtering yields predicted by the molecular dynamics method were in fairly good accordance with the obtainable experimental data in absolute values as well as in manner of the variation according to the Incident energy. Threshold energy for sputtering of Fe(100) substrate was found to be about 40 eV. Additionally, distributions of kinetic energies of sputtered atoms and their original depths could be obtained.

• Corrosion Science and Technology
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• 제22권6호
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• pp.393-398
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• 2023

Properties of hafnium nitride (HfN) coatings are affected by deposition conditions, most often by the sputtering technique. Appropriate use of different magnetron sputtering modes allows control of the structural development of the film, thereby enabling adjustment of its properties. This study compared properties of HfN coatings deposited by direct current magnetron sputtering (dcMS), mid-frequency direct current magnetron sputtering (mfMS), and inductively coupled plasma-assisted magnetron sputtering (ICPMS) systems. The microstructure, crystalline, and mechanical properties of these HfN coatings were investigated by field emission electron microscopy, X-ray diffraction, atomic force microscopy, and nanoindentation measurements. HfN coatings deposited using ICPMS showed smooth and highly dense microstructures, whereas those deposited by dcMS showed rough and columnar structures. Crystalline structures of HfN coatings deposited using ICPMS showed a single δ-HfN phase, whereas those deposited using dcMS and mfMS showed a mixed δ-HfN and HfN_0.4 phases. Their performance were increased in the order of dcMS < mfMS < ICPMS, with ICPMS achieving a value of 47.0 GPa, surpassing previously reported results.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.300-300
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• 2010

Ceramic capacitor의 에너지내량을 향상시켜 제품의 신뢰성을 높이고자 RF Sputtering을 이용하여 외부전극을 형성하였다. 본 연구에서는 Target의 종류, 증착 시간 및 열처리 유/무에 따른 Ceramic capacitor의 전기적 특성 및 미세구조를 분석하여 최적조건을 확립하였으며, 최적 증착 조건으로 제작한 Ceramic capacitor의 에너지내량을 측정하였다. Target은 Ni target과 Cu target을 사용하였으며, Sputtering 시간은 10, 30, 60분으로 하였다. Sputtering 시간에 따른 Ceramic capacitor의 용량 특성과 손실은 큰 차이가 없었지만, Wire 연결시 Sputtering 시간에 따라 납땜성의 차이가 나타났으며, 증착 시간과 열처리 유/무에 따른 에너지내량의 변화를 확인하였다.