• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.57-61
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• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.480-492
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• 1996

AZO (Aluminum doped Zinc Oxide) transparent conducting thin films were fabricated by reactive DC mangnetron sputtering method using zinc target containing 2 wt% of Al. Transition range with optimum transmittance and conductivity was obtained by contrlling partial pressure of reactive oxygen gas. Sputtering condition for this transition range could be kept stable by regulating the target voltage. According to XRD analysis, there was only one peak for (002) plane in AZO films and the films deposited in transition range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1859-1861
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• 2005

The ZnO:Al thin films were prepared on glass by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of AZO thin film with sputtering current $0.1[A]{\sim}0.6[A]$. We obtained the lowest resistivity $2.3{\times}10^{-4}[{\Omega}-cm]$ at sputtering current 0.6[A] from the 4-point probe and the strong (002) peak at sputtering current 0.3[A] from the X-ray Diffractometer (XRD ). The optical transmittance of AZO thin films show a very high transmittance of $80{\sim}95%$ in the visible range and exhibit the absorption edge of about 350nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.430-431
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow and input current. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.92-96
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• 1998

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.461-464
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• 1995

We have investigated the effects of sputtering Ar gas pressure on magnetic anisotropy of Co/Pt multilayers, where sputtering Ar gas pressure was varied from 2 to 20 mTorr. The surface and volume anisotropies were found to be strongly dependent on sputtering Ar gas pressure. In particular, the surface anisotropy exhibited more than fourfold enhancement as Ar pressure was decreased from 20 to 5 mTorr. We have found that the surface anisotropy was closely correlated with the low-angle x-ray diffraction intensity. We believe that these results are mainly ascribed to the variation of microstructure in the Co/Pt multilayer thin films with sputtering Ar gas pressure.