• Title/Summary/Keyword: Sputtered film

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A study on thermal and electrical properties of molybdenum sputtered clothing materials (몰리브덴 스퍼터링 처리 의류소재의 열적 특성과 전기적 특성에 관한 연구)

  • Han, Hye Ree
    • The Research Journal of the Costume Culture
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    • v.30 no.1
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    • pp.88-101
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    • 2022
  • Molybdenum is used in electrical contacts, industrial motors, and transportation materials due to its remarkable ability to resist heat and corrosion. It is also used to flame coat other metals. This study investigated, the thermal characteristics of the molybdenum sputtered material, such as electrical conductivity, and stealth effects on infrared thermal imaging cameras. To this end, molybdenum sputtered samples were prepared by varying the density of the base sample and the type of base materials used. Thereafter, the produced samples were evaluated for their surface state, electrical conductivity, electromagnetic field characteristics, thermal characteristics, stealth effect on infrared thermal imaging cameras, and moisture characteristics. As a result of infrared thermal imaging, the molybdenum layer was directed towards the outside air, and when the sample was a film, it demonstrated a greater stealth effect than the fabric. When the molybdenum layer was directed to the outside air, all of the molybdenum sputtering-treated samples exhibited a lower surface temperature than the "untreated sample." In addition, as a result of confirming electrical properties following the molybdenum sputtering treatment, it was determined that the film exhibited better electrical conductivity than the fabric. All samples that were subjected to molybdenum sputtering exhibited significantly reduced electromagnetic and IR transmission. As a result, the stealth effect on infrared thermal imaging cameras is considered to be a better way of interpreting heat transfer than infrared transmission. These results are expected to have future applications in high-performance smartwear, military uniforms, and medical wear.

Study on the Thermal and Electrical Conductivity Properties of Titanium-sputtered Materials

  • Han, Hye Ree
    • Journal of the Korean Society of Clothing and Textiles
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    • v.46 no.3
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    • pp.530-544
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    • 2022
  • Titanium exhibits substantial corrosion resistance, strength, and ductility, with a specific gravity of approximately 4.5 and a melting point of approximately 1800℃. It is currently used in aircraft parts and space development. This study considered the thermal characteristics, stealth effects of infrared thermal imaging cameras, electromagnetic shielding, and electrical conductivity of Ti-sputtered materials. Base materials of different densities and types were treated using titanium sputtering. Infrared thermal imaging showed a better stealth effect when the titanium layer was directed toward the outside. The film sample presented a better stealth effect than the fabrics did. In each of the samples subjected to titanium sputtering, when the titanium layer was directed outward, the untreated sample or exposed titanium layer showed surface temperatures lower than those of the samples with the titanium layer oriented toward the heat source. Additionally, after the titanium sputtering treatment, the films conducted electricity (low resistance) better than the fabrics did. All titanium-sputtered specimens presented reduced electromagnetic wave transmission and significantly reduced infrared transmission. These results are expected to apply to military uniforms (soldiers' protective clothing to gain the upper hand on the battlefield), medical sensors, multifunctional intelligent textiles and etc.

Temperature Dependence on Structural, Tribological, and Electrical Properties of Sputtered Conductive Carbon Thin Films

  • Park, Yong-Seob;Hong, Byung-You;Cho, Sang-Jin;Boo, Jin-Hyo
    • Bulletin of the Korean Chemical Society
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    • v.32 no.3
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    • pp.939-942
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    • 2011
  • Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

Photocurrent Characteristics of Zinc-Oxide Films Prepared by Using Sputtering and Spin-Coating Methods

  • Park, Sungho;Kim, Byung Jun;Kang, Seong Jun;Cho, Nam-Kwang
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1351-1355
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    • 2018
  • The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter (스퍼터로 성장된 알루미늄 박막의 공정 변수와 박막 두께에 따른 물성)

  • Oh, Il-Kwon;Yoon, Chang Mo;Jang, Jin Wook;Kim, Hyungjun
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.438-443
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    • 2016
  • We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.