• Textile Coloration and Finishing
• /
• v.9 no.6
• /
• pp.10-17
• /
• 1997

In order to improve the anti-static property of several hydrophobic fibers by sputter etching, polyester, polypropylene and poly(p-phenylene sulfide) have been etched by sputtering in the presence of argon gas and the resulting anti-static property investigated by half time decay, the time of water permeation, weight loss rate and scanning electron microscope(SEM). The temporary change and durability of anti-static property of samples treated with sputter etching were evaluated. The results were as follows; 1) Half time decay of samples treated with sputter etching were decreased about 18~38%. According to increasing sputter etching time, half time decay is decreased. 2) The wettability and weight loss rate of treated samples were increased remarkably. According to the SEM photographs, many microcraters on the substrate surface by the sputter etching were observed. 3) Although the washing treatment and the time elapsed after treatment are allowed longer, the variation of half time decay hardly can find.

• Textile Coloration and Finishing
• /
• v.3 no.2
• /
• pp.25-33
• /
• 1991

Poly(ethylene terephthalate)(PET) and nylon 6 films stretched uniaxially and biaxially were sputter etched in the presence of argon gas. The surface of the etched films was investigated using a scanning electron microscope(SEM). While cracks perpendicular to the stretched direction were observed in the uniaxil stretched films sputter etched for 30 min., many protrusions were formed in the biaxial stretched films at the height of 0.3-0.4 gm for PET and $0.1-0.2\mum$ for nylon 6. The tops of two or three protrusions merged etching time increased to 60 min. The contact angle to water of the sputter etched PET and nylon 6 films decreased steeply when etched for one to 3 min. In order to investigate chemical changes on the surface ESCA analysis was carried out. In both films sputter etched $C_{1s}$ intensity decreased and $O_{1s}$ intensity increased compared with the unetched ones.

• Journal of the Korean Magnetics Society
• /
• v.10 no.3
• /
• pp.123-132
• /
• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.99-102
• /
• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.

• Journal of Integrative Natural Science
• /
• v.7 no.3
• /
• pp.183-187
• /
• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.10
• /
• pp.833-841
• /
• 1998

ZnO thin films on glass substrate were deposited by on RF mangetron reaction sputter with various grgon/oxygen gas ratios and sbustrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, AFM, XPS, RBS, and electrometer(keithley 617). All films showed a strong perferred orientation along the x-axis on glass substrate, and the chemical stoichiometry of Zn/)=1/1.0 was obtained at Ar/$O_2$ =50/50. Surface roughness and resistivity depended on the argon/oxygen gas ratio. The minimum surface roughness of 20$\AA$ and maximum resistivity of $10^8$ $\Omega$ cm were achieved at Ar/$O_2$=10/90.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.9
• /
• pp.798-807
• /
• 2002

ZnO thin films on Si wafer were deposited by RF magnetron reactive sputter with various RF power, chamber pressure, argon/oxygen gas ratios ana substrate temperatures. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD, AFM, RBS, and electrometer(keithley 617). ZnO films showed a strong c-axis preferred orientation. Surface roughness and resistivity were changed by the argon/oxygen gas ratio. The minimum surface roughness of 12${\AA}$ and maximum resistivity of $10^8\Omega cm$ were achieved at Ar/O$O_2$=0/100.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.6
• /
• pp.481-486
• /
• 2001

ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.329-330
• /
• 2005

Bi-Sr-Ca-Cu-O thin films have been fabricated by sputter deposition method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1\sim9\times10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.772-775
• /
• 2009

Indium tin oxide(ITO) thin film was deposited at room temperature on polycarbonate(PC) substrate by in-line sputter system. ITO sputtering process was carried out at a various pressure for the reduction of ion damage on PC substrate and the electrical and the optical properties of deposited ITO films were obtained and analyzed. From the experimental results, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances at visible wavelength were maintained above 85%. The results are considered to be related to the pressure of oxygen atoms as a reaction gas.