Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation (ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2006.11a
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- pp.249-250
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- 2006