• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.144-144
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• 1999

최근 국내 반도체 기술의 비약적인 발전으로 전자 기기 전반에 소형화, 고주파화, 고기능화 등이 진행되는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기 신호를 변조.증폭시키는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기신호를 변조.증폭시키는 인덕터, 트랜스 포머와 같은 수동 자기 소자는 아직도 3차원 벌크 형태로 사용되고 있다. 일본을 중심으로 각국에서는 자기 소자의 박막.소형화에 대한 다각도의 연구가 진행되었으나 국내서는 아직 미미한 실정이다. 따라서 고집적 전원 공급 장치나 지능 센서 등에 반도체와 자기 소자의 사용 주파수 대역과 크기가 통합된 반도체-자성체 IC(semiconductor-magnetic integrated circuit)의 필요성이 절실히 요구되고 있다. 현재 사용중인 벌크형 인덕터나, 트랜스 포머의 경우 10NHz이상의 고주파 대역에는 응용되지 못하고 있다. 이는 적용된 자성체가 페라이트(ferrite)로서 초투자율은 크지만 고주파대역에서의 공진 현상에 의해 저투자율을 나타내고, 포화 자속밀도가 낮기 때문이다. 이러한 페라이트 자성체의 대체품으로 주목받고 있는 것이 Fe, Co계 고비저항 자성마이다. 그러나 Co는 낮은 포화자속밀도를 나타내기 때문에 이러한 조건을 충족시키는 자성막으로 Fe계 미세 결정막을 사용하였다. 본 연구에서는 선택적 전기 도금법(selective electroplating method)과 LIGA like process를 이용하여 공시형 인덕터(air core inductor)의 라이브러리(library)를 구축한 뒤, 고주파 대역에서의 우수한 연자기 특성을 가지는 Ti/FeTaN막을 적용한 자기 박막 인덕터(magnetic thin film inductor)를 제작하여 비교.분석하였다. 제조된 인덕터의 특성 추정은 impedence analyzer를 이용하여 주파수에 따른 저항(resistance), 인덕턴스(inductance)를 측정, 계산한 성능지수(quality factor)로서 인덕터의 성능을 평가하였다. 제조된 박막 인덕터의 코일 형상은 5턴의 double rectangular spiral 구조였으며, 적용된 자성막의 유효 투자율9effective permeability)은 1500, 자성막, 절연막 그리고 코일의 두께는 각각 2$\mu\textrm{m}$, 1$\mu\textrm{m}$, 20$\mu\textrm{m}$이며 코일의 폭은 100$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.573-580
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• 2020

In this paper, the characteristics of the inductor and capacitor, which are the basic components of the circuit, are constructed in a form that can be used in the LTCC multilayer. The inductors and capacitors used for the analysis were designed with rectangular spiral structures and MIM structures inside dielectrics with a dielectric constant of 7, respectively. The measured results were extracted from each element of the equivalent circuit proposed by the curve fitting method and verified the validity of the proposed equivalent circuit based on the extracted results. The analyzed inductor and capacitor were implemented in the form of library and proved its usefulness by applying to Elliptical type 5th LPF design. The LPF was measured through practical production, and as a result, the insertion loss in the passband DC ~ 3.7 GHz was up to 1.0 dB, the return loss was 19.2 dB, and the attenuation in the rejection band was 23.9 dB, which was close to the design goal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.5
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• pp.509-516
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• 2004

High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.873-876
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• 2005

A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.333-338
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• 1999

Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.221-224
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• 2004

This paper has researched on-chip spiral inductor in digital CMOS technology by modeling physical structure based on foundry parameter. To show the possibility of its application to RF design, we designed dual band RF front-end receiver. The simulated receiver have gain of 23/23.5 dB and noise figure of 2.8/3.36 dB at 2.45/5.25 GHz, respectively. It occupies $16mm^2$ in $0.25{\mu}m$ CMOS with 5 metal layer.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.30-36
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• 2005

Recently, It has been reported that the spin sprayed ferite film shows better magnetic properties at high frequeny that the ferrite by co-firing over $800^{\circ}C$ . Besides, there is no limitation to select the substrate materials because it can be processed with relatively low temperature below $100^{\circ}C$. Therefore, we fabricated film inductor as a passive device for DC-DC converter by a use of spin sprayed embedded form was completed by via hole process of pad opening. Saturation magnetization of 0.61 T and real part of permeability of 110 were obtained in Ni-Zn ferrite. In addition, inductance of 1.52 ${\mu}H$, quality factor of 24.3 at 5 MHz were measured with spiral 16 turn inductor. The rated current of inductor was 863 mA.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.389-393
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• 2003

This paper presents circuit modeling and characterization of silicon-based on-chip integrated inductors in Giga Hertz range for wireless communication products. We compare several different designs of on-chip inductors for self-resonant frequency and quality factor. The measurement data could be used as a design guide for manufacturing practical spiral inductors for wireless applications. We provide the equivalent inductor circuit parameters from the actual measurement data.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.47-48
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• 2002