• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.580-585
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• 2006

UV-thermal dually curable coating materials were prepared by the sol-gel method. Nano-sized colloidal boehmite was treated with various organo silane coupling agents. These materials could be well dispersed in various alcohols and relatively polar organic solvents such as tetrahydrofuran and acetonitrile. The coating films were prepared by a spin coating method on various substrates, which were characterized by FT-IR, Si/Al CP MAS NMR spectra, UV-Vis spectrophotometer, FE-SEM, Taber abraser, haze meter, and pencil hardness tester. The effects of molar ratio and types of silane coupling agents, curing method and ion-shower treatment were investigated. Dually curable coating method offered an optimally good quality film in both hardness and transmittance. The transparency and the hardness of the prepared films were increased with amounts of 3-(trimethoxysilyl)propylmethacrylate, and (3-glycidyloxypropyl)trimethoxysilane, respectively. The adhesion between coated layer and substrate could be enhanced by ion-shower treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.101-104
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• 1998

A new planar-type micro gas sensor was designed and fabricated on silicon substrate and the operating characteristics of the sensor were investigated. The thin sensitive film of the sensor was fabricated by spin-coating of the SnO$_2$ sol solution which was synthesized by hydrothermal method. The spin-coating method for preparation of sensing layer was adopted to improve the long-term stability of the fabricated sensing film instead of physical methods such as rf sputtering and thermal evaporation. The fabricated microsensor showed a fairly good sensing performance for CO gas in air at 250$^{\circ}C$ The sensitivity(S=Ra/Rg) was shown to be about 5 to 2000ppm CO with heating power of 50mW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.984-987
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• 2002

In this study, It is to synthesize PPV-copolymer and to make polymer electroluminesence device in single layer of ITO/PPV -copolymer/metal. and then it has been realized basic characteristics for display device through analysis and recognized application possibility by luminous material. PPV-copolymer is used spin coating method and electrode is evaporated of vacuum deposition method by changing materials. The result of experiment, The PPV-copolymer used this study emitted blue color, could be discovered a change of emttion characteristic by electrode material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.192-195
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• 2000

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

• Journal of the Korean Graphic Arts Communication Society
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• v.9 no.1
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• pp.1-11
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• 1991

In this reseach, double-layered photoconductor consist of the carrier generation layer(CGL) of $\varepsilon$ type copper phthalocyanine thin film by an aqueous coating method and the carrier transport layer(CGL) of polyvinyl carbazol(PVK) by spin coating. We inverstigated effect of the surfactant solution and cathod electrolysis to the crystal type of $\varepsilon$-CuPc in CGL with TEM, SEM and X- ray diffraction spectroscopy and studied the mechanism of an aqueous coating for the preparation of CGL. The effect of the washing of CGL about the electrophotographic characteristics of the $\varepsilon$-CuPc/PVK doublelayered photoconductors is studied also.

• Journal of Magnetics
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• v.19 no.3
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• pp.227-231
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• 2014

We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.42-45
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• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.348-348
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• 2009

The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.