• Title/Summary/Keyword: Spin device

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Spin Transport in a Ferromagnet/Semiconductor/Ferromagnet Structure: a Spin Transistor

  • Lee, W.Y;Bland, J.A.C
    • Journal of Magnetics
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    • v.7 no.1
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    • pp.4-8
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    • 2002

  • The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

  • https://doi.org/10.4283/JMAG.2002.7.1.004 인용 PDF KSCI

The Analysis of Device Models and the Method of Increasing Compatibility Between Device Models for M&S V&V of NetSPIN (NetSPIN M&S 모델 V&V를 위한 장비 모델 및 모델간 호환성 증진방안 분석)

  • Park, In-Hye;Kang, Seok-Joong;Lee, Hyung-Keun;Shim, Sang-Heun
    • Journal of Information Technology Services
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    • v.11 no.sup
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    • pp.51-60
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    • 2012

  • In this paper, we provide the analysis of device model and method between device models for compatible M&S V&V of the NetSPIN. First of all, we analysis features, structure, and classification of the NetSPIN. The second, as a part of reliable V&V process, we analysis network system modeling process, correlation between device modeling process for M&S of the NetSPIN. The third, we suggest making a kind of pool of reference model and module of devices for the increase factor of reuse between device model. We also, at the point view of M&S V&V, conclude that there is the validity of the fidelity in device modeling process. Through the analysis of the NetSPIN device model and suggestion of the method for higher compatibility between device modes, the development process of device model be clearly understood. Also we present the effective method of the development for reliable device mode as the point of V&V.

  • https://doi.org/10.9716/KITS.2012.11.sup.051 인용 PDF KSCI

Correlation between spin density and Vth instability of IGZO thin-film transistors

  • Park, Jee Ho;Lee, Sohyung;Lee, Hee Sung;Kim, Sung Ki;Park, Kwon-Shik;Yoon, Soo-Young
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1447-1450
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    • 2018

  • The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

  • https://doi.org/10.1016/j.cap.2018.08.016 인용 KSCI