• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.431-432
• /
• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.4
• /
• pp.51-56
• /
• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.

• Journal of the Korean Magnetics Society
• /
• v.25 no.6
• /
• pp.175-179
• /
• 2015

The half-metallicity and magnetism of the (001) surfaces of $(AlP)_1/(CrP)_1$ superlattice were investigated by means of FLAPW (Full-potential Liniarized Augmented Plane Wave) method. We considered four types of (001) surface termination, i.e., Al(S)-, Cr(S)-, P(S)Al(S-1)- and P(S)Cr(S-1)-term systems. We found that only Cr(S)-term system maintains the half-metallicity at the surface as only this system has the calculated magnetic moment of integer number of bohr magnetons. The magnetic moment of Cr(S) atom in the system was $3.02{\mu}_B$ which was increased from the bulk value by the effects of band narrowing and increased spin-splitting at the surface. The electronic density of states of the P(S) atom in the P(S)Al(S-1)-term showed very sharp surface states due to the broken $p_z$ bonds at the surface. We found there is still a strong p-d hybridization between the P(S) and Cr(S-1) layers in the P(S)Cr(S-1)-term which causes a considerable increase of magnetic moment of P(S) atom.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.30 no.6
• /
• pp.1076-1081
• /
• 2001

Gamma-irradiated peanuts, Korean and Chinese origins, were investigated on detection properties by thermoluminescence (TL), electron spin resonance (ESR), and DNA comet assay (single cell gel electrophoresis). TL measurement showed that the non-irradiated sample revealed a glow curve with low intensity at about 25$0^{\circ}C$, while the irradiated samples showed higher intensity around at 18$0^{\circ}C$. TL ratio (TL$_1$/TL$_2$) of area for TL$_1$ glow curve to TL$_2$ was below 0.05 for the non-irradiated sample and 0.2 or more for the irradiated ones, thus identifying each other. ESR spectroscopy for the irradiated peanuts using outer skin showed negligible signals induced by irradiation, indicating ESR is little applicable to the detection of irradiated peanuts. In DNA comet assay, the non-sample had no or very short tails, whereas the irradiated samples revealed the cells with long tails. Significance in the increase of their lengths depending on irradiation dose (r=0.761/Korean, r=0.768/Chinese) was also found. There was no remarkable difference in detection properties by origins of samples in all determinations, It is concluded that TL analysis or DNA comet assay is suitable for detection of irradiated peanuts and a combined method is recommendable for enhancing the reliability of detection results.

• Journal of the Korean Magnetics Society
• /
• v.21 no.2
• /
• pp.43-47
• /
• 2011

It is known that the Fe-Al transition metal compounds have a lot of disagreement about structural stability and magnetism. In this study, the correlation between magnetism and atomic structure of ordered $B_2$, $L1_2$, and $D0_3$ structured Fe-Al compounds has been investigated using the all-electron full-potential linearized augmented plane wave (FLAPW) method based on the generalized gradient approximation (GGA). We found that considered all the structures were calculated to be stabilized in a ferromagnetic state. The calculated spin magnetic moments of the Fe atoms for B2 and $L1_2$ structures were 0.771 and 2.373 ${\mu}_B$, respectively, and that of Fe(I) and Fe(II) in $D0_3$ structure calculated to be 2.409 ${\mu}_B$, 1.911 ${\mu}_B$, respectively. In order to investigate structural stability between $L1_2$ and $D0_3$ structures, we performed the formation enthalpy calculations. As a result, the $D0_3$ structure is found to be more favorable than $L1_2 one by energy difference 16 meV/atom, which is well consistent with the experimental observation. We understood about structural stability and magnetism for Fe-Al compounds in terms of analysis of their atomic and electronic structures.

• Clean Technology
• /
• v.18 no.4
• /
• pp.366-372
• /
• 2012

Three acrylic copolymers containing tris(8-hydroxyquinoline) aluminum (AlQ3) pendant group (25 wt%), acrylateco-HEMA-$AlQ_3$ (25 wt%), were successfully synthesized by free radical polymerization from acrylates [methyl methacrylate (MMA), acrylonitrile (AN) or 2-hydroxyethyl methacrylate (HEMA)] with HEMA functionalized with AlQ3 pendant groups (HEMA-p-$AlQ_3$). The glass transition temperatures ($T_g$) of MMA-co-HEMA-p-$AlQ_3$ (copolymer 1), AN-co-HEMA-p-$AlQ_3$ (copolymer 2) and HEMA-co-HEMA-p-$AlQ_3$ (copolymer 3) were found to be 158, 150 and $126^{\circ}C$, respectively. They have good thermal stability: a very desirable feature for the stability of OLEDs. Their solubility, thermal properties, UV-visible absorption and photoluminescence behaviors were investigated. They were found to be soluble in various organic solvents such as tetrahydrofuran (THF), dimethylformamide (DMF), toluene and chloroform. It was also found that the UV-visible absorption and photoluminescence behaviors of these copolymers were similar to those of pristine $AlQ_3$. Green organic light-emitting diodes (OLEDs) have also been fabricated using these copolymers as light emission/electron transport components obtained easily by spin coating, and their current density voltage (J-V) curves were compared. The OLED device of the copolymer 3 had the lowest turn-on voltage of about 2 V compared to other copolymer types devices.

• Corrosion Science and Technology
• /
• v.13 no.1
• /
• pp.28-35
• /
• 2014

Recently, the fuel oil of diesel engines of marine ships has been increasingly changed to heavy oil of low quality as the oil price is getting higher and higher. Therefore, the spiral gear attached at the motor of the oil purifier which plays an important role to purify the heavy oil is also easy to expose at severe environmental condition due to the purification of the heavy oil in higher temperature. Thus, the material of the spiral gear requires a better mechanical strength, wear and corrosion resistance. In this study, the heat treatment(tempering) with various holding time at temperature of $500^{\circ}C$ was carried out to the alloy of Cu-7Al-2.5Si as centrifugal casting, and the properties of both hardness and corrosion resistance with and without heat treatment were investigated with observation of the microstructure and with electrochemical methods, such as measurement of corrosion potential, cathodic and anodic polarization curves, cyclic voltammogram, and a.c. impedance. in natural seawater solution. The ${\alpha}$, ${\beta}^{\prime}$ and ${\gamma}_2$ phases were observed in the material in spite of no heat treatment due to quenching effect of a spin mold. However, their phases, that is, ${\beta}^{\prime}$ and ${\gamma}_2$ phases decreased gradually with increasing the holding time at a constant temperature of $500^{\circ}C$. The hardness more or less decreased with heat treatment, however its corrosion resistance was improved with the heat treatment. Furthermore, the longer holding time, the better corrosion resistance. In addition, when the holding time was 48hrs, its corrosion current density showed the lowest value. The pattern of corroded surface was nearly similar to that of the pitting corrosion, and this morphology was greatly observed in the case of no heat treatment. It is considered that ${\gamma}_2$ phase at the grain boundary was corroded preferentially as an anode. However, the pattern of general corrosion exhibited increasingly due to decreasing the ${\gamma}_2$ phase with heat treatment. Consequently, it is suggested that the corrosion resistance of Cu-7Al-2.5Si alloy can be improved with the heat treatment as a holding time for 48 hrs at $500^{\circ}C$.

• Journal of the Korean Magnetics Society
• /
• v.18 no.4
• /
• pp.131-135
• /
• 2008

The electronic structures, magnetism, and half-metallicity of the full-Heusler $Co_2TiSn$(001) surfaces have been investigated by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. We have considered both of the Co atoms terminated(Co-term) and the TiSn atoms terminated(TiSn-term) surfaces. From the calculated density of states, we found that the half-metallicity was destroyed at the surface of the Co-term, while the half-metallicity was retained at the TiSn-term. For the surface of the Co-term, due to the reduced coordination number the occupied minority d-states were shifted to high energy regions and that cross the Fermi level, thus destroy the surface half-metallicity. On the other hand the surface states at the surface of the TiSn-term were located just below the Fermi level, which reduces the minority spin-gap with respect to that of the center layer. The calculated magnetic moment of the surface Co atom for the Co-term was increased by 10 % to 1.16 ${\mu}_B$ with respect to that of the inner-layers, while the magnetic moment of the subsurface Co atom in the TiSn-term has almost same value of the innerlayers(1.03 ${\mu}_B$).

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.81-81
• /
• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Magnetics Society
• /
• v.3 no.1
• /
• pp.48-55
• /
• 1993

We report the photoemission (PES) studies for the Co/Pd multilayter. The Co 3d PES spectrum of Co/Pd exhibits two interesting features, one near the Fermi energy, $E_{F}$, and another at ~2.5 eV below $E_{F}$. The Co 3d peak near $E_{F}$ of Co/Pd is much narrower than that of the bulk Co, consistent with the enhanced Co magnetic moment in Co/Pd compared to that in the bulk Co. The Co 3d feature at ~-2.5 eV resembles the Pd valence band structures, which suggests a substantial hybridization between the Co and Pd sublayers. The Co 3d PES spectrum of Co/Pd is compared with the existing band structures, obtained using the local spin density functional calculations. A reasonable agreement is found concerning the bandwidth of the occupied part of the Co 3d band, whereas a narrow Co 3d peak near $E_{F}$ seems not to be described by the band structure calculations.