• 한국결정성장학회지
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• 제17권5호
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• pp.179-186
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• 2007

[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다.

• 센서학회지
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• 제10권6호
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• pp.328-337
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• 2001

수평 전기로에서 $CdGa_2Se_4$ 다결정을 합성하여 HWE 방법으로 $CdGa_2Se_4$ 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. $CdGa_2Se_4$ 단결정 박막은 증발원과 기판의 온도를 각각 $630^{\circ}C$, $420^{\circ}C$로 성장하였다. 10K에서 측정한 광발광 exciton 스펙트럼과 이중결정 X-선 요동곡선(DCRC)의 반치폭(FWHM)을 분석하여 단결정 박막의 최적 성장 조건을 얻었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $8.27{\times}10^{17}/cm^3$, $345\;cm^2/V{\cdot}s$였다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐(splitting)에 의해서 측정된 ${\Delta}Cr$ (crystal field splitting)은 106.5 meV, ${\Delta}So$ (spin orbit splitting)는 418.9 meV였다. 10K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 주개 bound exciton등의 피크가 관찰되었다. 이때 중성 주개 bound exciton의 반치폭과 결합 에너지는 각각 8 meV와 13.7 meV였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 137 meV 였다.

• 센서학회지
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• 제23권2호
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 한국자기학회지
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• 제21권4호
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• pp.127-131
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• 2011

암염구조를 가진 SiTe에서 일부 Si를 Cr로 치환한 화합물에 대한 전자구조와 자성을 교환상관퍼텔셜에 일반기울기 근사를 쓴 full potential linearized augmented plane wave 에너지 띠 계산방법을 이용하여 연구하였다. Si 대신 25 %의 Cr을 치환한 $CrSi_3Te_4$ 및 50 %를 치환한 $CrSiTe_2$를 고려하였다. 총에너지 계산으로 $CrSi_3Te_4$는 11.64 a.u, $CrSiTe_2$는 a = 7.89 a.u., c = 11.13 a.u.의 평형격자상수를 가짐을 알았다. $CrSiTe_2$는 단위부피당 정수인 $4{\mu}_B$의 자기모멘트를 가지는 반쪽금속성을 나타냈으며, $CrSi_3Te_4$는 단위부피당 자기모멘트가 $4{\mu}_B$보다 미세하게 컸다. 두 화합물 모두에서 치환되어 들어간 Cr은 $3.6{\mu}_B$ 정도의 자기모멘트를 가졌으며, Si나 Te는 약하게 자기화되었다. 계산된 스핀분극 상태밀도를 이용하여 이 두 화합물의 자성을 논의하였다.

• 센서학회지
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• 제24권6호
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Investigative Magnetic Resonance Imaging
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• 제23권3호
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• pp.251-258
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• 2019

Purpose: To assess the feasibility of the use of spin-echo echo-planar imaging (SE-EPI) magnetic resonance elastography (MRE) in livers of children and young adults. Materials and Methods: Patients (${\leq}20$ years old) who underwent 3T SE-EPI MRE were included retrospectively. Subjects were divided into three groups according to the purpose of the liver MRI: suspicion of fatty liver or focal fat deposition in the liver (FAT group), liver fibrosis after receiving a Kasai operation from biliary atresia (BA group), and hepatic iron deposition after receiving chemotherapy or transfusions (IRON group). Technical failure of MRE was defined when a stiffness map showed no pixel value with a confidence index higher than 95%, and the patients were divided as success and failure groups accordingly. Clinical findings including age, gender, weight, height, and body mass index and magnetic resonance imaging results including proton density fat fraction (PDFF), $T2^*$, and MRE values were assessed. Factors affecting failure of MRE were evaluated and the image quality in wave propagation image and stiffness map was evaluated using the appropriate scores. Results: Among total 240 patients (median 15 years, 211 patients in the FAT, 21 patients in the BA, and 8 patients in the IRON groups), technical failure was noted in six patients in the IRON group (6/8 patients, 75%), while there were no failures noted in the FAT and BA groups. These six patients had $T2^*$ values ranging from 0.9 to 3.8 ms. The image quality scores were not significantly different between the FAT and BA groups (P > 0.999), while the scores were significantly lower in the IRON group (P < 0.001). Conclusion: The 3T SE-EPI MRE in children and young adults had a high technical success rate. The technical failure was occurred in children with decreased $T2^*$ value (${\leq}3.8ms$) from iron deposition.

• 한국결정성장학회지
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• 제18권5호
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• pp.217-224
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• 2008

수평 전기로에서 $ZnIn_2Se_4$ 단결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $ZnIn_2Se_4$ 단결정 박막을 반절연성 GaAs(100) 기판에 성장시켰다. $ZnIn_2Se_4$ 단결정 박막의 성장 조건을 증발원의 온도 $630^{\circ}C$, 기판의 온도 $400^{\circ}C$였고 성장 속도는 0.5 $\mu m/hr$였다. $ZnIn_2Se_4$ 단결정 박막의 결정성의 조사에서 10K에서 광발광(photoluminescence) 스펙트럼이 682.7nm ($1.816{\underline{1}}eV$)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요통곡선(DCRC)의 반폭치(FWHM)도 128 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농노와 이동도는 293 K에서 각각 $9.41\times10^{16}/cm^{-3}$, $292cm^2/V{\cdot}s$였다. $ZnIn_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293 K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 varshni공식에 따라 계산한 결과 $E_g(T)=1.8622\;eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$ 이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting energy ${\Delta}cr$값이 182.7meV이며 spin-orbit energy ${\Delta} so$값은 42.6meV임을 확인하였다. 10 K일 때 광전류 봉우리들은 n= 1, 27일때 $A_{1}-$, $B_{1}-$와 $C_{27}-exciton$ 봉우리임을 알았다.

• 센서학회지
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• 제11권5호
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• pp.309-318
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• 2002

수평 전기로에서 $CdIn_2S_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $CdIn_2S_4$ 단결정 박막을 반절연성 GaAs (100)기판에 성장시켰다. $CdIn_2S_4$ 단결정 박막의 성장 조건은 증발원의 온도 $630^{\circ}C$, 기판의 온도 $420^{\circ}C$였고 성장 속도는 $0.5\;{\mu}m/hr$였다. $CdIn_2S_4$ 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence) 스펙트럼이 463.9 nm (2.6726 eV)에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중 결정 X-선 요동 곡선(DCRC)의 반폭치(FWHM)도 127 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $9.01{\times}10^{16}/cm^3$, $219\;cm^2/V{\cdot}s$였다. $CdIn_2S_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $2.7116eV-(7.74{\times}10^{-4}eV/K)T^2$/(T+434K)이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting ${\Delta}cr$값이 0.1291 eV이며 spin-orbit ${\Delta}so$값은 0.0248 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1$-, $B_1$-와 $C_1$-exciton 봉우리임을 알았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.393-393
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• 2012

Optically active nanostructures such as subwavelength moth-eye antireflective structures or surface enhanced Raman spectroscopy (SERS) active structures have been demonstrated to provide the effective suppression of unwanted reflections as in subwavelength structure (SWS) or effective enhancement of selective signals as in SERS. While various nanopatterning techniques such as photolithography, electron-beam lithography, wafer level nanoimprinting lithography, and interference lithography can be employed to fabricate these nanostructures, roll-to-roll (R2R) nanoimprinting is gaining interests due to its low cost, continuous, and scalable process. R2R nanoimprinting requires a master to produce a stamp that can be wrapped around a quartz roller for repeated nanoimprinting process. Among many possibilities, two different types of mask can be employed to fabricate optically active nanostructures. One is self-assembled Au nanoparticles on Si substrate by depositing Au film with sputtering followed by annealing process. The other is monolayer silica particles dissolved in ethanol spread on the wafer by spin-coating method. The process is optimized by considering the density of Au and silica nano particles, depth and shape of the patterns. The depth of the pattern can be controlled with dry etch process using reactive ion etching (RIE) with the mixture of SF6 and CHF3. The resultant nanostructures are characterized for their reflectance using UV-Vis-NIR spectrophotometer (Agilent technology, Cary 5000) and for surface morphology using scanning electron microscope (SEM, JEOL JSM-7100F). Once optimized, these optically active nanostructures can be used to replicate with roll-to-roll process or soft lithography for various applications including displays, solar cells, and biosensors.