• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.116-121
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• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.38-42
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• 2016

We investigate the solution coating process of organic small molecules that are easily recrystallized in a solvent. The spin-coated films of small molecule N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) exhibit many aggregations on the surface and thus poor surface morphology. To tackle it, we have added a chain-entangled polymer poly(N-vinylcarbazole) (PVK) into the NPB solution. It is found that a small amount of PVK indeed prohibits the recrystallization of NPB in a solvent. By the addition of PVK (30 wt%), the peak-to-peak roughness of the films is reduced from 262 nm down to 2.7 nm, which is even lower than that (~5.1 nm) of the polymer film. It is also demonstrated that OLED with the PVK-mixed NPB film shows higher current and power efficiencies, compared to OLED with the NPB or PVK film. It is attributed that the addition of PVK into NPB suppresses the occurrence of leaky channels induced by the recrystallization phenomenon.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.11-15
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• 2016

The organic light emitting diodes (OLEDs) have been studied as large flexible displays, light source and hard wares of internet of things. However, OLEDs show some drawbacks in terms of external environments due to the low work function of the metals and the reactive organic materials. In particular, the operation functions of the OLEDs tend to deteriorate rapidly by exposing the oxygen and moisture. So as to prevent it, domestic and overseas studies underway in various method such as ALD, PVD, CVD. But it has complex process and high cost. Therefore In order to protect devices from the external environments, it is important to develop the passivation thin films of low-cost and simple process which can prevent the devices from the penetration of the oxygen and moistures. In this study, to improve the reliability, passivation thin films were coated onto the green OLEDs by spin coating method and investigated the changes of the optical properties of the prepared devices at various doping concentrations of sodium alginate (SA). The passivation solutions were synthesized by using polyvinyl alcohol (PVA) host material with a dopant of SA which were added with the amounts of 10, 20 and 40 wt% into the PVA. As a result, the best barrier properties of the OLEDs were obtained for the samples with 40 wt% SA. Finally, the passivation films can be optimized by using the mixture solution of PVA and SA materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1388-1390
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• 2007

This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.128-128
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• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.254-260
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• 2014

Organic solar cells have attracted extensive attention as a promising approach for cost-effective photovoltaic devices. However, organic solar cell has disadvantage of low power conversion efficiency in comparison with other type of solar cell, due to the recombination ratio of hole and electron is too large in the active layer. Thus we have change the surface structure of PEDOT:PSS layers to improve the current density by colloidal lithography method using various-size of polystyrene sphere. The two types of coating method were applied to fabricate the different pattern shape and height, such as spin coating and drop casting. Using the organic solvent, we easily eliminate the PS sphere and could make the varied pattern shapes by controlling the wet etching time. Also we have measured the electrical properties of patterned PEDOT:PSS film to check whether it is suitable for organic photovoltaics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.551-552
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• 2007

Coating films were prepared from silane-terminated Colloidal silaca(CS) and UV-curable acrylate resin. The silane-terminated CSs were synthesized from CS and methyltrimethoxysilane(MTMS) and then treated with 3-methacryloxypropyltrimethoxysilane(MAPTMS)/3-glycidoxypropyltrimethoxysilane( GPTMS)/vinyltrimethoxysilane(VTMS) by sol-gel process, respectively. The silane-terminated CS and acrylate resin were hybridized using UV-curing system. Thin films of hybrid material were prepared using spin coater on the glass. Their hardness, contact angle and transmittance improved with the addition of silane-terminated CS.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.69.2-69.2
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• 2010

Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.