• 제목/요약/키워드: Spin coating process

검색결과 284건 처리시간 0.029초

원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성 (Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells)

  • 김기현;정성진;양태열;임종철;장효식
    • 한국재료학회지
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    • 제33권11호
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

CF$_4$ 플라즈마 처리로 불소를 첨가한 실록산 Spin-On-Glass 박막의 특성 (Properties of Spin-On-Glass Siloxane Thin Films Fluorine-doped by CF$_4$ Plasma)

  • 김현중;김기호
    • 한국표면공학회지
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    • 제34권3호
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    • pp.258-263
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    • 2001
  • Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

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감광성 polyimide LB막의 pattern형성에 관한 연구 (A study on patterning of photosensitive polyimide LB film)

  • 김현종;채규호;김태성
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.59-66
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    • 1996
  • Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

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ESD 스프레이를 이용한 OPV 제작 기법 (Fabrication Method of OPV using ESD Spray Coating)

  • 김정수;조정대;김동수
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.84.2-84.2
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    • 2010
  • PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active components in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT, which are printed with functional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manufacturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem: it is difficult to apply toa continuous process as a R2R printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, anelectrostatic atomizer sprays micro-drops from the solution injected into the capillary, with electrostatic force generated by electric potential of about tens of kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and Active layer which consist of the P3HT:PCBM. The result of experiment, organic solar cell using ESD thin film coated method is occurred efficiency of about 1.4%. Also, the case of only used to ESD method in the active layer coating is occurred efficiency of about 1.86% as the applying a spin coating in the PEDOT:PSS layer. We can expect that ESD method is possible for continuous process to manufacture in the organic solar cell or OLED device.

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초음파 중합에 의한 polypyrrole 나노입자를 함유하는 메조포러스 TiO2 박막의 합성 (Synthesis of Mesoporous TiO2 Thin Films with Polypyrrole Nanoparticles by Ultrasonic-induced Polymerization)

  • 정광석;조성호;송명근;김종득
    • Korean Chemical Engineering Research
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    • 제46권4호
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    • pp.777-782
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    • 2008
  • 초음파 중합법을 이용하여 pyrrole을 중합시킴으로써 polypyrrole 나노입자를 합유하는 메조포러스 $TiO_2$ 박막을 합성하였다. 메조포러스 $TiO_2$ 박막을 만들기 위한 $TiCl_4$-계면활성제 용액에 pyrrole을 넣어주고 초음파 중합시킴으로써 용액 내에 polypyrrole 나노입자들이 잘 분산된 형태로 만들어졌다. 이 용액을 이용하여 spin-coating과 열처리를 함으로써 polypyrrole 나노입자를 합유하는 메조포러스 $TiO_2$ 박막을 제조하였다. 열처리 후에도 기공 구조는 잘 유지되었으며, polypyrrole 나노입자들이 박막 내에 잘 분산되었다. 주형물질인 계면활성제의 종류와 pyrrole의 양을 조절함으로써, 합성된 박막의 기공 크기와 빛의 흡광도를 조절하였다.

산화아연 나노핵의 조작을 통한 산화아연 나노로드의 제어 (Artificial Control of ZnO Nanorods via Manipulation of ZnO Nanoparticle Seeds)

  • 신경식;이삼동;김상우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.399-399
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    • 2008
  • Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

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ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅 (Silicon Containing Bottom Anti-Reflective Coating for ArF Photolithography)

  • 이준호;김형기;김명웅;임영택;박주현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.66-66
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    • 2006
  • Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

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PMMA(Poly Methyl Methacrylate) 박막 코팅 층의 마찰 및 마멸 거동 (Tribological Behavior of Thin PMMA (Poly Methyl Methacrylate) Coating Layers)

  • 강석하;김용석
    • 소성∙가공
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    • 제13권8호
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    • pp.716-722
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    • 2004
  • Effects of sliding speed, applied load, and thickness of PMMA (Poly Methyl Methacrylate) coating layers on their dry sliding frictional and wear behavior were investigated. Sliding wear tests were carried out using a pin-on-disk wear tester. The PMMA layer was coated on Si wafer by a spin coating process with two different thicknesses, $1.5\mu\textrm{m}$ and $0.8\mu\textrm{m}$. AISI 52100 bearing steel balls were used as a counterpart of the PMMA coating during the wear. Normal applied load and sliding speed were varied. Wear mechanisms of the coatings were investigated by examining worn surfaces using an SEM. Friction coefficient of the coatings decreased with the increase of the applied load. Both adhesion and deformation of the coating determined the coefficient. The thicker PMMA layer with the thickness of $1.5mutextrm{m}$ showed lower friction coefficient than the thinner layer under most test conditions. Effects of sliding speed and applied load on the frictional behavior were varied depending on the thickness of the coating layer.

Synthesis and Dispersion Stabilization of Indium Tin Oxide Nanopowders by Coprecipitation and Sol-Gel Method for Transparent and Conductive Films

  • Cho, Young-Sang;Hong, Jeong-Jin;Kim, Young Kuk;Chung, Kook Chae;Choi, Chul Jin
    • 대한금속재료학회지
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    • 제48권9호
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    • pp.831-841
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    • 2010
  • Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

하이드라진 용액법으로 형성된 CuInSe2 다층 박막 분석 (Characterization of Hydrazine Solution Processed Multi-layered CuInSe2 Thin Films)

  • 정중희
    • 한국표면공학회지
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    • 제48권4호
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    • pp.169-173
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    • 2015
  • $CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.