• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.44-51
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• 2016

The powder core, conventionally fabricated from iron particles coated with insulator, showed large eddy current loss under high frequency, because of small specific resistance. To overcome the eddy current loss, the increase in the specific resistance of powder cores was needed. In this study, copper oxide coating onto electrically conductive iron particles was performed using a planetary ball mill to increase the specific resistance. Coating factors were optimized by the Response surface methodology. The independent variables were the CuO mass fraction, mill revolution number, coating time, ball size, ball mass and sample mass. The response variable was the specific resistance. The optimization of six factors by the fractional factorial design indicated that CuO mass fraction, mill revolution number, and coating time were the key factors. The levels of these three factors were selected by the three-factors full factorial design and steepest ascent method. The steepest ascent method was used to approach the optimum range for maximum specific resistance. The Box-Behnken design was finally used to analyze the response surfaces of the screened factors for further optimization. The results of the Box-Behnken design showed that the CuO mass fraction and mill revolution number were the main factors affecting the efficiency of coating process. As the CuO mass fraction increased, the specific resistance increased. In contrast, the specific resistance increased with decreasing mill revolution number. The process optimization results revealed a high agreement between the experimental and the predicted data ($Adj-R^2=0.944$). The optimized CuO mass fraction, mill revolution number, and coating time were 0.4, 200 rpm, and 15 min, respectively. The measured value of the specific resistance of the coated pellet under the optimized conditions of the maximum specific resistance was $530k{\Omega}{\cdot}cm$.

• Journal of Advanced Marine Engineering and Technology
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• v.15 no.1
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• pp.51-58
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• 1991

Corrosion fatigue test was performed by the use of plane bending fatigue tester in marine environment having various specific resistance from 25(natural sea water) to 5000.ohm.cm. It is in order to investigate the effects of marine environmental factor on the corrosion fatigue fracture of SS41 steel. The main results obtained are as follows; 1. The aspect ratio(b/a) of corner crack growing in natural sea water is lower than that in air. 2. The surface crack growth rate(da/dN) in marine environment is faster than that in air and da/dN delaies with the specific resistance increased. 3. The experimental constant m of paris rule [da/dN=C(${\delta}$K)$^m$] decrease with the specific resistance decreased and the effect of corrosion in proportion to the specific resistance is more sensitive than that of stress intensity factor range(${\delta}$K) under region II. 4. The accelerative factor(${\alpha}$) in marine environment is about 1.1-2.7 and .alpha. is increase under the low region of stress intensity factor range(${\delta}$K). 5. The electrode potential($E_0$) gets less noble potential with the specific resistance decreased.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.363-367
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• 2015

This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.193-195
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• 2009

This paper aims to develop a low gate source voltage ($V_{gs}$) N-LDMOS element that is fully operational at a CMOS Logic Gate voltage (3.3 or 5 V) realized using the 0.35 μm BCDMOS process. The basic structure of the N-LDMOS element presented here has a Low $V_{gs}$ LDMOS structure to which the thickness of a logic gate oxide is applied. Additional modification has been carried out in order to obtain features of an improved breakdown voltage and a specific on resistance ($R_{sp}$). A N-LDMOS element can be developed with improved features of breakdown voltage and specific on resistance, which is an important criterion for power elements by means of using a proper structure and appropriate process modification. In this paper, the structure has been made to withstand the excessive electrical field on the drain side by applying the double gate oxide structure to the channel area, to improve the specific on resistance in addition to providing a sufficient breakdown voltage margin. It is shown that the resulting modified N-LDMOS structure with the feature of the specific on resistance is improved by 31%, and so it is expected that optimized power efficiencies and the size-effectiveness can be obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.1-5
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• 2009

Analytical expressions for breakdown voltage and specific on-resistance of 6H-SiC PN diodes have been derived successfully by extracting an effective ionization coefficient from ionization coefficients for electron and hole in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of $10^{15}{\sim}10^{18}cm^{-3}$. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of $5{\times}10^{15}{\sim}10^{16}cm^{-3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• Archives of Pharmacal Research
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• v.15 no.1
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• pp.20-29
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• 1992

Effects of squalene on cellular and non-specific immune responses and antitumor activity in mice were investigated. Cellular and non-specific immunological assay parameters adopted in the present study were delayed-type hypersensitivity reaction and resette forming cells (RFC) for cellular immunity, activities of natural killer (NK) cells and phagocyte for non-specific immunity. Squalene resulted in marked increases of cellular and non-specific immune functions and enhancement of host resistance to tumor challenge in dose-dependent manner.