• Corrosion Science and Technology
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• v.14 no.6
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• pp.288-295
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• 2015

The present work addresses crevice and galvanic corrosion processes occurring at the cylinder head gasket/cylinder head interface and cylinder head gasket/cylinder liner interface of four-stroke medium-speed diesel engines for marine applications. The contact between these systems and the marine environment can promote formation of demanding corrosion conditions, therefore influencing the lifetime of the engine components. The electrochemical behavior of various metals and alloys used as head gasket materials (both ferrous alloys and copper alloys) was investigated. The efficacy of corrosion inhibitors was determined by comparing electrochemical behavior with and without inhibitors. In particular, crevice corrosion has been investigated by electrochemical tests using an experimental set-up developed starting from the requirements of the ASTM G-192-08, with adaptation of the test to the conditions peculiar to this application. In addition to the crevice corrosion resistance, the possible problems of galvanic coupling, as well as corrosive reactivity, were evaluated using electrochemical tests, such as potentiodynamic measurements. It was possible to quantify, in several cases, the corrosion resistance of the various coupled materials, and in particular the resistance to crevice corrosion, providing a basis for the selection of materials for this specific application.

• Corrosion Science and Technology
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• v.2 no.6
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• pp.253-259
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• 2003

Zirconium based alloys have been extensively used as a cladding material for fuel rods in nuclear reactors, due to their low thermal neutron absorption cross-section, excellent corrosion resistance and good mechanical properties at high temperatures. However, a cladding material for fuel rods in nuclear reactors was contact water during long time at high-temperature, so it is necessary to improve the wear and corrosion resistance of the fuel cladding, At ambient environment, there are few data or paper on the characteristic of corrosion in chloride solution and acidic solution. The specimens used in this work are pure Zr and Zircaloy-4. Zircaloy-4 is a specific zirconium-based alloy containing, on a weight percent basis, 1.4% Sn, 0.2% Fe, 0.1% Cr. Pitting corrosion resistance of two alloys by ASTM G48 is higher than that of electrochemical method. Passive film formed on Zircaloy-4 is mainly composed of $ZrO_2$, metallic Sn, and iron species regardless of formation environments. Also, passive film formed on Zr alloys shows n-type semiconductic property on the base of Mott-Schottky plot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.3
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• pp.489-496
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• 1988

This paper is studied to know wear mechanism in variation of austempering temperature and holding time of austempered ductile cast iron against mating material SM45C hardened by heat treatment. The wear tests were carried out by rubbing the annular surface of two test pieces in dry sliding friction. The wear mechanism was investigated by scanning electron microscopy and the retained austenite volume fraction was investigated by X-ray diffractometer. The experimental results show that the wear characteristics depend largely on the oxidation of the testing materials which is influenced by the sliding velocity and distance. The retained austenite has a negative effect during frictional contact because it has increased severe wear by softened surface layer. It is shown experimentally that hard metals have lower frictional resistance and hence the resistance to adhesion is increased due to stronger interatomic linking bonds and increase in the surface energy.

• Journal of Korean Association for Spatial Structures
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• v.11 no.3
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• pp.77-83
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• 2011

Laminated composite plates have shown their superiority over metals in applications requiring high specific strength, high specific modulus, and so on. Therefore, they have used in various industry. However, they have poor resistance to impact compared to typical metal materials. To resolve this problem by many researchers for a variety of studies have been attempted. This study investigates characteristic of impact behavior of laminated composite plates due to initial stress. Using finite element program which involved the indentation law, we investigate characteristic of impact behavior of laminated composite plates due to initial stress.

• New & Renewable Energy
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• v.3 no.1 s.9
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• pp.75-82
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• 2007

Aluminum was used as metallic bipolar plate material to reduce a stack weight. The functional materials such as conductive material, Au and nonconductive material, PTFE [polytetrafluoroethylene] were coated on the bipolar plate to enhance electrical contact and corrosion prevention in PEMFC. The active area of bipolar plate is divided into the top layer part that electric current mainly passes, and the bottom layer part that gas and water pass. The bottom layer part in the flow channel needs not to have electrical conductivity because it doesn't pass electric current directly. In this reason, Au on the top layer and PTFE on the bottom layer were coated to apply high electrical conductivity and/or good corrosion resistance. Although the single cell performance using Au-PTFE/Al bipolar plate was shown 78% in comparison with that of graphite, specific power of Au-PTFE/Al bipolar plate(0.4 W/g) was twice as much as graphite bipolar plate.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.95.1-95.1
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• 2011

In this work, graphene was prepared by modified Hummers method and prepared graphene was applied to electrode materials for supercapacitor. In addition, to enhance the electrochemical performance of graphene, carbon black was deposited onto graphene via chemical reduction. The effect of the carbon black content incorporated on the electrochemical properties of the graphene-based electrodes was investigated. It was found that nano-scaled carbon black aggregates were deposited and dispersed onto the graphene by the chemical reduction of acid treated carbon black and graphite oxide. From the cyclic voltammograms, carbon black-deposited graphene (CB-GR) showed improved electrochemical performance, i.e., current density, quicker response, and better specific capacitance than that of pristine graphene. This indicates that the carbon black deposited onto graphene served as an conductive materials between graphene layers, leading to reducing the contact resistance of graphene and resulted in the increase of the charge transfer between graphene layers by bridge effect.