• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.801-807
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• 2008

Recently, CV, CN-CV and CNCV-W cable are used for HVDC transmission and distribution cable. However, XLPE which is used as insulation layer of power cable has thermosetting properties. It is very difficult to recycling. In this paper, we prepared HDPE/EVA film, which the blending ratio are 80:20, 70:30, 60:40, 50;50 respectively for the purpose of recycling. Main factor such as electric field distribution and its resistivity in insulation system affected on insulation performance and reliability for HVDC applications. Therefore, electric field distribution formed by space charge and characteristics of volume resistivity was currently investigated. We suggest the possibility of utilization for HVDC insulation layer from the results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.127-132
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• 2002

Space charge distributions and behaviors in silane crosslinked polyethylene(SXLPE)/ crosslinked polyethylene(XLPE) laminates were investigated using a pulsed electroacoustic (PEA) method. In case of monolayer, XLPE shows heterocharge while SXLPE shows homocharge. It was observed that charges were accumulated at the interface of SXLPE/XLPE laminate when applied electric field was more than 20kV/mm. The charge profile at various temperatures was also acquired using temperature-controllable PEA system. Although applied electric field is only 8.6 kV.mm, positive interfacial charge starts to appear near 50$^{\circ}C$. It was found that the interfacial charge behavior of SXLPE/XLPE laminate under low voltage at high temperature is corresponding to that under high voltage at room temperature.

• Journal of Astronomy and Space Sciences
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• v.21 no.3
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• pp.201-208
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• 2004

In this paper we have examined the effect of dust charge density on nonlinear ion acoustic solitary wave which propagates obliquely with respect to the external magnetic field in a dusty plasma. For the dusty charge density below a critical value, the Sagdeev potential $\Psi1(n)$ has a singular point in the region n < 1, where n is the ion number density divided by its equilibrium number density. If there exists a dust charge density over the critical value, the Sagdeev potential becomes a finite function in the region n < 1, which means that there may exist the rarefactive ion acoustic solitary wave. By expanding the Sagdeev potential in the small amplitude limit up to on4 near n=1, we find the solution of ion acoustic solitary wave. Therefore we suggest that the dust charge density plays an important role in generating the rarefactive solitary wave.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.67-70
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• 1991

When analyzing field or optimizing the shape of electrode in three dimensional space by using the surface charge method, we need to divide finely the surface of electrode into surface element like triangle or rectangle. In this case, there exist any variables in field analysis or field optimization. In particular, smoothness on the surface of optimized shape is not good. Recently, A paper is published where introducing NURB curve to field analysis and field optimization about two dimensional space model and axial symmetric three dimensional space model results in reduced variables, enhenced accuracy and improved smoothness. NURB curve has some useful properties like continuity, controllability and locality. Therefore in this paper, in order to improve the demerits of the established optimization method for three dimensional space models, the NURB surface that has same properties in common with NURB curve is used to analyze and optimize simple model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.41-46
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• 2007

Surface potential properties at the interface of pentacene thin films on gold (Au) and aluminum (Al) surfaces were investigated by using a near-field scanning microwave microprobe (NSMM). The surface potential formed across the pentacene film was observed by measuring the microwave reflection coefficient $S_{11}$ and compared with the result of a Kelvin-probe method. The obtained reflection coefficient ${\Delta}S_{11}$ of the pentacene thin films on Al was decreased as the pentacene film thickness increased due to the increased accumulation of negative space charges, while for Au ${\Delta}S_{11}$ was essentially constant.

• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1330-1332
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• 1994

In order to investigate the properties of electrical conduction and space charge in crosslinked polyethylene film, we were observed the specimen with 200[${\mu}m$] thickness. The electrical conduction properties of specimen were measured temperature range from 30 to $110[^{\circ}C] $as well as $10^{-2}$ - 1 [MV/cm] of electric field. The investigations on influence of space charge were carried out at room temperature and $60 [^{\circ}C]$.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.508-509
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• 2005

In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.