• 제목/요약/키워드: Source oscillation

검색결과 94건 처리시간 0.024초

An innovative vibration barrier by intermittent geofoam - A numerical study

  • Majumder, Mainak;Ghosh, Priyanka;Sathiyamoorthy, Rajesh
    • Geomechanics and Engineering
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    • 제13권2호
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    • pp.269-284
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    • 2017
  • A new technique is proposed to obtain more effective screening efficiency against the ground vibration using intermittent geofoam (IF) in-filled trench. The numerical analysis is performed by employing two-dimensional finite element method under dynamic condition. Vertically oscillated strip foundation is considered as the vibration source. In presence of the ground vibration, the vertical displacements at different locations (pick-up points) along the ground surface are captured to determine the amplitude reduction factor (ARF), which helps to assess the efficiency of the vibration screening technique. The efficiency of IF over continuous geofoam (CF) in-filled vibration barriers is assessed by varying the geofoam density, the location of trench and the frequency of excitation. The results from this study indicate that a significant reduction in ARF can be achieved by using intermittent geofoam as compared to continuous geofoam. Further, it is noticed that the efficiency of IF increases with an increase in the frequency of the vibrating source. These encouraging results put forward the potential of utilising intermittent geofoam as a vibration screening material.

몬테카를로/유한체적결합법에 의한 국소 가열되는 복잡한 형상에서의 흡수, 방사, 비등방산란 매질에 대한 복사열전달 해석 (Radiative Heat Transfer in Discretely Heated Irregular Geometry with an Absorbing, Emitting, and An-isotropically Scattering Medium Using Combined Monte-Carlo and Finite Volume Method)

  • 변도영;이창진;장선용
    • 대한기계학회논문집B
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    • 제28권5호
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    • pp.580-586
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    • 2004
  • The ray effects of finite volume method (FVM) or discrete ordinate method (DOM) are known to show a non-physical oscillation in solution of radiative heat transfer on a boundary. This wiggling behavior is caused by the finite discretization of the continuous control angle. This article proposes a combined procedure of the Monte-Carlo and finite-volume method (CMCFVM) for solving radiative heat transfer in absorbing, emitting, and an-isotropically scattering medium with an isolated boundary heat source. To tackle the problem, which is especially pronounced in a medium with an isolated heat source, the CMCFVM is suggested here and successfully applied to a two-dimensional circular geometry.

고상원 분자선 단결정 성장법을 이용한 다결정 실리콘 에미터, 자기정렬 실리콘 게르마늄 이종접합 쌍극자 트랜지스터 (Polysilicon-emitter, self-aligned SiGe base HBT using solid source molecular beam epitaxy)

  • 이수민;염병렬;조덕호;한태현;이성현;강진영;강상원
    • 전자공학회논문지A
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    • 제32A권2호
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    • pp.66-72
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    • 1995
  • Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

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A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology

  • Lee, Iljin;Kim, Junghyun;Jeon, Sanggeun
    • Journal of electromagnetic engineering and science
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    • 제17권3호
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    • pp.147-152
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    • 2017
  • This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

GTO 제어 SSSC가 설치된 계통의 RCF 해석법에 의한 고유치 해석 (Eigenvalue Analysis of Power Systems with GTO Controlled SSSC by the RCF Method)

  • 동무환;김덕영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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    • pp.230-231
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    • 2006
  • In this paper, the RCF(Resistive Companion Form) analysis method is used to analyze small signal stability of power systems including GTO controlled FACTS equipment such as SSSC. To apply the RCF analysis method in power system small signal stability problems, state transition equations of power system equipments and power systems with SSSC are presented. In eigenvalue analysis of power systems by the RCF analysis method, SSSC is modelled into the equivalents voltage source model and PWM switching circuit model. As a result of simulation, the RCF method is very powerful to calculate the oscillation modes exactly after the switching operations, and useful to analyze the small signal stability of power systems with periodic switching device such as SSSC.

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단극발전기의 내부 인자를 적용한 평활필터 설계 (Smoothing Filter Design Applying a Parameter of a Homo-polar Generator)

  • 김인수;성세진
    • 전력전자학회논문지
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    • 제12권5호
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    • pp.409-415
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    • 2007
  • 본 논문에서는 필터 설계시 고려해야 될 주요 항목 중 하나인 성능인자 권장값을 만족시키기 위해 단극 발전기의 내부인자 값을 필터 설계에 반영하는 새로운 평활필터 설계방법을 제안한다. 이 방법은 감쇄용 저항을 배제시킴으로서 평활필터의 효율증대 및 소형화를 기한다. 그리고 성능인자와 함께 공진주파수도 함께 고려함으로서 부성저항 특성을 갖는 고승압 변환기 등을 적용한 시스템의 안정성을 증대시킨다.

수정된 마디해석법을 사용한 HVDC 시스템 시뮬레이션을 위한 Genetic 알고리즘에 의해 최적화된 PI 컨트롤러 (PI controller for HVDC system simulation based on Modified nodal analysis method optimized by Genetic Algorithms)

  • 양정제;강현성;안태천;박인규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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    • pp.252-254
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    • 2006
  • The recent improvement in the performance of digital processor, the application of control technology, which used in the HVDC(High Voltage Direct Current) system with the digital processors, has increased. Having this research development as the basis, this paper presents an achievement of progression by tuning the parameter of PI controller based on Genetic Algorithms(GAs) and by controlling with PI controller with a developed simulator by applying the Matrix operating function, voltage source switching element, modified nodal analysis which can include transformer and the backward Euler which does not create the problem of numerical oscillation. As a result, I expect this development in the simulator HVDC System to bring more application in the field of control technology research with an expanded practicality.

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스윙형 역지 밸브에 미치는 상류측 교란요소 영향에 관한 실험적 연구 (Experimental Investigation of the Effect of Upstream Disturbances on Swing Check Valves)

  • 송석윤;김양석;박성근
    • 유체기계공업학회:학술대회논문집
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    • 유체기계공업학회 2004년도 유체기계 연구개발 발표회 논문집
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    • pp.309-314
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    • 2004
  • The experimental loop was designed and installed to measure the disc positions, disc back stop load and differential pressure with flow velocity for 3 inch and 6 inch swing check valves. The tests were performed at various conditions of upstream flow disturbance source and distance from the tested check valves to investigate the effect of the upstream flow conditions on the disc stability of the swing check valves. The selected disturbance sources were elbow, globe valve, and orifice. The experimental results are presented herein.

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Dual Gate-Controlled SOI Single Electron Transistor: Fabrication and Coulomb-Blockade

  • Lee, Byung T.;Park, Jung B.
    • Journal of Electrical Engineering and information Science
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    • 제2권6호
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    • pp.208-211
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    • 1997
  • We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

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Schwarz-Christoffel 변환(變換)에 의한 부가질량(附加質量)의 계산(計算) (The Added Mass by Schwarz-Christoffel Transformation)

  • 황종흘;이창호
    • 대한조선학회지
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    • 제18권4호
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    • pp.13-20
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    • 1981
  • The hydrodynamic added mass of two dimensional cylinders oscillating vertically at high frequencies in the free surface is of interest to ship vibration problems. Conformal transformation is one of the methods commonly in use for computing the inertia coefficient. Especially, Schwarz-Christoffel transformation has been employed to evaluate the inertia coefficient for the cylinders of straight frames and chines. In this paper, the inertia coefficient for the cylinders with round corners in vertical oscillation at high frequencies are evaluated by employing the Schwarz-Christoffel transformation for the concave corner. The results of calculation by employing the Schwarz-Christoffel transformation are found to be well within the expected range of values compared to Lewis form and the results obtained by source distribution method.

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