• Archives of design research
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• v.13 no.4
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• pp.85-93
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• 2000

Design becomes a source of new competitive power in the boundless global market so-called globalization. The competitive power in business was lied in the technology in 70's and the design was understood as a styling or graphic means. However, the design has become more important means to get the competitive power in business since 1980. World businesses have found the fact that it has a super competitive power to make the product's performance as well as its dignity rather than it is to determine the product's external view or color. The change of design policy in Phillips, one of the world's leading producers of electronic products, is not much different. Design manager's power was limited until 70's. However, Phillips has focused its business strategy on the higher competitive power since 1980 and they welcomed Robert Blaich, vice president of design and development at Herman Miller Inc., to be a member of the company, expanding the importance of design along with restructure while working on the globalization. Meanwhile, Stefano Marzano, a Senior Director in 90's, established a high design concept, working on the strategic futures to get customer-oriented and for successful commercialization. The vision of the future developed over 3 years until 1996 was to forecast 10 years coming up and create a new value while achieving the business target through the design as an innovative design in bracing for the information network era.

• Economic and Environmental Geology
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• v.2 no.2
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• pp.1-35
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• 1969

The structure and geologic history of the Triassic basin in southern Connecticut have been interpreted by using gravimetric data. A gravity survey of 800 gravity stations was made by the U.S. Geological Survey in the southern Connecticut area. The resulting data were reduced by the Bouguer method and then plotted and contoured along with the generalized geology. Residual gravity maps were prepared by different methods to obtain the most plausible agreement with the known geology of the area. Seven gravity profiles across the basin are presented to show the distribution of the Triassic deposits that could produce the measured anomalies. It is concluded that the basin was formed by successive step faulting in the late Triassic period and that the sediments accumulated progressively in this basin. The deepest portion of the basin is located in the middle of the present Triassic belt and reaches a depth of about 2 miles below the surface. The data also appear to indicate the possible source areas for the basalt which at present forms the lava flows, sills, and dikes exposed in the Cheshire and Gaillard regions. The information concerning the tectonic history of the Connecticut Triassic Valley aids considerably in establishing the geologic history of the Appalachians in late Triassic time.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.168-173
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• 2013

In this paper, we would like to introduce Electron Relay Enhancer (ERE), a supplementary device, which improves commercial solar cell efficiency minimizing electron-hole recombination of solar cell. The ERE in this study is mainly composed of two capacitors which are connected to AC power source and bridge diode system which controls electron flow direction. Two capacitors repeat collecting electrons from solar cell and pumping the collected electrons to load resistance or inverter through the bridge diode system. While one positively charged capacitor collect electrons, the other negatively charged one pumps electrons. A positively charged capacitor pulls the more exited electrons from the solar cell, before the exited electrons recombine the holes in solar cell. That is why the ERE system enhances solar cell efficiency. As a result, the measured power increase of the solar cell with the ERE is varied from 5.9 W to 25.6 W in each experimental condition. Maximal increase rate of the solar cell power with ERE is 30.8% of solar cell power without ERE.

• Progress in Medical Physics
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• v.15 no.2
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• pp.100-104
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• 2004

The detector size effect due to the spatial response of detectors is a critical source of inaccuracy in clinical dosimetry that has been the subject of numerous studies. Conventionally, the detector response kernel contains all the information about the influence that the detector size has on the measured beam profile. Various analytical models for this kernel have been proposed and studied in theoretical and experimental works. Herein, a method to simply determine the detector response kernel using the Monte Carlo simulation and convolution theory has been proposed. Based on this numerical method, the detector response kernel for a Farmer type ion chamber embedded in a water phantom has been obtained. The obtained kernel shows characteristics of both the pre-existing parabolic model proposed by Sibata et al. and the Gaussian model used by Garcia-Vicente et al. From this kernel and deconvolution technique, the detector size effect can be removed from measurements for 6MV, 10${\times}$10 $\textrm{cm}^2$ and 0.5${\times}$10 $\textrm{cm}^2$photon beams. The deconvolved beam profiles are in good agreements with the measurements performed by the film and pin-point ion chamber, with the exception of in the tail legion.

• Journal of Convergence for Information Technology
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• v.10 no.10
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• pp.115-122
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• 2020

Due to the climate change, torrential rain downpours unprecedentedly, and urban areas repeatedly suffer from the inundation damages, which cause miserable loss of property and life by flooding. Two major reasons of urban flooding are river inundation and inland submergence. However, most of previous studies ignored the comprehensive mechanism of those two factors, and showed discrepancy and inadequacy due to the linear summation of each analysis result. In this study, river inundation and inland flooding were analyzed at the same time. Petrov-stabilizing scheme was adopted to capture the shock wave accurately by which river inundation can be modularized. In addition, flux-blocking alrotithm was introduced to handle the wet and dry phenomena. Sink/source terms with EGR (Exponentially Growth Rate) concept were incorporated to the shallow water equations to consider inland flooding. Comprehensive simulation implementing inland flooding and river inundation at the same time produced satisfactory results because it can reflect the counterbalancing and superposition effects, which provided accurate prediction in flooding analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.1-7
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• 2006

3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Journal of KIISE:Databases
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• v.41 no.4
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• pp.249-255
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• 2014

Copy number variations(CNVs) are a recently recognized class of human structural variations and are associated with a variety of human diseases, including cancer. To find important cancer genes, researchers identify novel CNVs in patients with a particular cancer and analyze large amounts of genomic and clinical data. We present a tool called CNVDAT which is able to detect CNVs from NGS data and systematically analyze the genomic and clinical data associated with variations. CNVDAT consists of two modules, CNV Detection Engine and Sequence Analyser. CNV Detection Engine extracts CNVs by using the multi-resolution system of scale-space filtering, enabling the detection of the types and the exact locations of CNVs of all sizes even when the coverage level of read data is low. Sequence Analyser is a user-friendly program to view and compare variation regions between tumor and matched normal samples. It also provides a complete analysis function of refGene and OMIM data and makes it possible to discover CNV-gene-phenotype relationships. CNVDAT source code is freely available from http://dblab.hallym.ac.kr/CNVDAT/.

• The Korean Journal of Applied Statistics
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• v.22 no.3
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• pp.617-626
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• 2009

A series of recent papers reported that the inter-gene correlations in Affymetrix microarray data sets were strong and long-ranged, and the assumption of independence or weak dependence among gene expression signals which was often employed without justification was in conflict with actual data. Qui et al. (2005) indicated that applying the nonparametric empirical Bayes method in which test statistics were pooled across genes for performing the statistical inference resulted in the large variance of the number of differentially expressed genes. Qui et al. (2005) attributed this effect to strong and long-ranged inter-gene correlations. Klebanov and Yakovlev (2007) demonstrated that the inter-gene correlations provided a rich source of information rather than being a nuisance in the statistical analysis and they developed, by transforming the original gene expression sequence, a sequence of independent random variables which they referred to as a ${\delta}$-sequence. We note in this report using two cDNA microarray data sets experimented in this country that the strong and long-ranged inter-gene correlations were still valid in cDNA microarray data and also the ${\delta}$-sequence of independence could be derived from the cDNA microarray data. This note suggests that the inter-gene correlations be considered in the future analysis of the cDNA microarray data sets.