Growth of InGaN on sapphire by GSMBE(gas source molecular beam epitaxy) using $DMH_y$ (dimethylhydrazine) as nitrogen source at low temperature
(Nitrogen source로 암모니아, $DMH_y$ (dimethylhydrazine)을 사용해 Gas-Source MBE로 성장된 InGaN 박막특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2004.07b
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- pp.1010-1014
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- 2004