• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• Journal of the Korean Wood Science and Technology
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• 제38권2호
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• pp.124-134
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• 2010

This study was performed to evaluate the efficiency of using softwood as the sawdust medium for Lentinula edodes cultivation, effect of nutrient on the mycelial growth, spawning, the mushroom yield, and quality. The nitrogen nutrition significantly enhanced the mycelial growth of L. edodes. The glutamic acid in the L. leptolepis and P. koraiensis, and asparagine in the P. densiflora were appeared to slight increase in the mycelial growth. The vegetable oil showed very effective on the mycelial growth in the P. koraiensis sawdust medium. Carbon/nitrogen ratio of all the test was reduced after mycelial growth. The mycelial growth was exclusively dependent on reduction of carbon. The mushroom yield (32.7%) of the P. densiflora sawdust medium (carbon source: 3% active carbon, nitrogen source: 0.4% asparagines) was the best in mushroom production of L. edodes, followed by the Q. variabilis sawdust (35.4%) of the control medium. The diameter of mushroom cap was obtained from the P. densiflora sawdust (carbon source: 3% sucrose, nitrogen source: 0.4% potassium nitrate) and P. koraiensis sawdust (carbon source: 3% sucrose, nitrogen source: 0.4% potassium nitrate), and the P. koraiensis sawdust (carbon source: 3% xylose, nitrogen source: 0.4% glutamic acid, supplement: 0.05% amino acid), with values 71.5 mm, 71.5 mm and 72.1 mm, respectively. In the polypropylene bag cultivation, the weight losses of the block medium gradually increased for 80 days in the dark (13.8~16.8%) and then became stable in the range of 20.7~25.8%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 한국균학회지
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• 제1권2호
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• pp.25-30
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• 1973

1973년(年) 7월(月) 서울특별시내(特別市內) Smoke통닭 공장(工場)에서 얻은 이병닭 폐(肺)에서 Aspergilli를 분리(分離)할 수 있었고 또 C-source 및 N-source의 배양조건(培養條件)을 실험(實驗)한 결과(結果) 다음과 같은 결론(結論)을 얻었다. 1. Aspergillus fumigatus group에 속(屬)한 1 strain을 분리(分離) 하였다. 2. 분리용(分離用) 배지(培地)로서는 Czapek agar에 누에, 메주를 4g씩 첨가(添加)한 것이 과거 Austuwick(1962)가 보고한 2% malt extract agar medium보다 양호하였다. 3. 배양(培養)에 있어서 C-source는 종류(種類)와 양(量)에 따라 생장율과 sporulation의 차(差)가 많았고 20%에서 생장율이 떨어겼다. N-source에서는 종류(種類)에 따라 생장율의 차가 생기나 양(量)에 따라서는 생장율의 차(差)가 거의없고 다만 mycelium과 sporulation에서 차(差)가 생겼다.

• 한국미생물·생명공학회지
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• 제22권6호
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• pp.565-570
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• 1994

The pullulan production and morphological change of Aureobasidium pullulans ATCC 9348 were investigated both in batch fermentation and in continuous fermentation. The best carbon source for pullulan production was sucrose among seven different carbon sources. The pullulan production of A. pullulans was increased with increasing the carbon to nitrogen ratio of the medium using sucrose as a carbon source. In batch fermentation, production of pullullan occurred following exhaustion of the nitrogen source from the medium. The continuous fermentation showed that the pullulan production was closely parallelled with cell growth and was most effective at a dilution rate of 0.06~0.07 hr$^{-1}$-. The ratio of yeast-like cells(blastospores) of A. pullulans increased with the increase of growth rate, and reached 100% over the growth rate of 0.07 hr$^{-1}$. The growth rate, within a certain range, affected not only on the cell morphology, but on the specific pullulan productivity of A. pullulans.

• 한국응용곤충학회지
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• 제2권
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• pp.16-21
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• 1963

우리나라에서 참깨나 목화에 기생하여 위조병을 일으키는데 Fusarium oxsporum f. vasinfectum의 생육에 미치는 질소원의 종류 및 농도의 영향을 구명하고자 본연구에 착수하였다. 본연구의 결과로부터 질소원의 종류 및 농도의 차이가 Fusarium oxysporum f. vasinfectum의 생육에 큰 영향을 미친다는 것을 알았다. 공시한 4종의 질소원 중에서 Nitrate N나 Urea N가 Ammonia N 또는 Ammonium and Nitrate N 보다 공시균의 생육에 대하여 더욱 알맞는 질소원이었다. 그 중에서도 Nirtrate N는 타른 N원보다 훨씬 넓은 농도범위에서 본균에 의하여 이용되므로 가장 알맞는 질소원이라고 할 수 있다. 한편 Ammonia N는 공시균의 균계생장이나 포자형성의 현저한 감소와 더불어 기형적인 파형균총 또는 염주상균계세포를 농도에 관계없이 형성하므로 질소원으로서의 이용가치가 거의 없다. Ammonia N가 공시균의 생육에 미치는 영향은 파형균총 또는 염주상균계형성으로 보아 Phenoxy 화합물이 타른 진균의 생육에 미치는 영향과 흡사하다. Ammonium and Nitrate N도 50meg. 이상의 농도에서 공시균의 균계생장 또는 포자형성을 감소시키는 한편 파형균총과 같은 이상생육이 다소간음폐되기는 하나 적제 Ammonia N에서 유래하는 파형균총을 유기하므로 알맞는 질소원이라고 생각할 수 없다. 따라서 Ammonia N 단독 또는 타질소원과 Ammonia N의 결합태는 Fusarium oxysporum f. vasifectum의 생육을 위한 질소원으로서는 부적당하다.

• 한국인쇄학회지
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• 제22권2호
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• 한국버섯학회지
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• 제3권2호
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• pp.75-78
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• 2005

노랑느타리버섯 균사생장에 대한 영양원에 대한 연구의 결과는 다음과 같다. 1) 노랑느타리버섯의 균사생장에 적합한 탄소원은 maltose로 균사생장량은 357mg/25ml/15일이다. 2) 노랑느타리버섯의 균사생장에 적합한 질소원은 peptone으로 균사생장량은 374mg/25ml/15일이다. 3) 노랑느타리버섯의 균사생장에 적합한 유기산은 glutamic acid로 균사생장량은 389mg이다. 4) 노랑느타리버섯의 균사생장에 적합한 비타민은 biotin으로 균사생장량은 399mg/15일이다. 5) 노랑느타리버섯의 균사생장에 적합한 C/N율은 40이다.

• KSBB Journal
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• 제13권4호
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• pp.391-398
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• 1998

The effect of culture medium copper availability on the specific growth rate(${\mu}$) and carbon conversion efficiency (CCE) was sutided for an obligatory methanotroph Methylosinus trichosporium OB3b under various combinations of carbon and nitrogen sources. Methane or methanol was used as a carbon source, and nitrate or ammonium was used as a nitrogen source. Medium copper availability determined the intracellular location or kind of methane monooxygenase (MMO), cell-membrane (particulate or pMMO) when copper was present and cytoplasm (soluble or sMMO) when copper was deficient. When methane was used as a carbon source, copper-containing medium exhibited higher ${\mu}$ and CCE than copper-free medium regardless of the kind of nitrogen source. When methanol was used as a carbon source, however, the effect of copper disappeared. Ammonium gave the higher ${\mu}$ and CCE than nitrate for both methane and methanol. Those observation suggest that there exist an important difference in energy utilization efficiency for methane assimilation between sMMO and pMMO.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2001년도 추계학술발표대회
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• pp.430-433
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• 2001

본 실험은 erinacine 을 생산하는 Hericium erinaceus 균사체의 최대생산을 목적으로 기본배지를 토대로 수행되었다. 따라서 선정된 몇가지 대표적 carbon source와 nitrogen source를 비교 ${\cdot}$검토하였다. 그 결과 carbon source에서는 glucose에서 다른 source 에 비하여 높은 균사체 생산량을 보여주었으며 nitrogen source에서는 yeast extract에서 높은 균사체 생산량을 보여주었다. 또한 C/N ratio 검토를 근거로 본 실험에서는 glucose 20g/L 와 yeast extract 10g/L를 modified medium으로 선정하였다. 그 결과 균체량은 11.78g/L, Polysaccharide는 l.03g/L 로 측정되었다.