• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• Journal of the Korean Wood Science and Technology
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• v.38 no.2
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• pp.124-134
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• 2010

This study was performed to evaluate the efficiency of using softwood as the sawdust medium for Lentinula edodes cultivation, effect of nutrient on the mycelial growth, spawning, the mushroom yield, and quality. The nitrogen nutrition significantly enhanced the mycelial growth of L. edodes. The glutamic acid in the L. leptolepis and P. koraiensis, and asparagine in the P. densiflora were appeared to slight increase in the mycelial growth. The vegetable oil showed very effective on the mycelial growth in the P. koraiensis sawdust medium. Carbon/nitrogen ratio of all the test was reduced after mycelial growth. The mycelial growth was exclusively dependent on reduction of carbon. The mushroom yield (32.7%) of the P. densiflora sawdust medium (carbon source: 3% active carbon, nitrogen source: 0.4% asparagines) was the best in mushroom production of L. edodes, followed by the Q. variabilis sawdust (35.4%) of the control medium. The diameter of mushroom cap was obtained from the P. densiflora sawdust (carbon source: 3% sucrose, nitrogen source: 0.4% potassium nitrate) and P. koraiensis sawdust (carbon source: 3% sucrose, nitrogen source: 0.4% potassium nitrate), and the P. koraiensis sawdust (carbon source: 3% xylose, nitrogen source: 0.4% glutamic acid, supplement: 0.05% amino acid), with values 71.5 mm, 71.5 mm and 72.1 mm, respectively. In the polypropylene bag cultivation, the weight losses of the block medium gradually increased for 80 days in the dark (13.8~16.8%) and then became stable in the range of 20.7~25.8%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• The Korean Journal of Mycology
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• v.1 no.2
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• pp.25-30
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• 1973

The Aspergilli can be isolated from many of damaged domestic fowl's lung which were collected at fowl slaughter house from July to August 1973, during two months at Dapsimri, Dongdaemoon-ku, Seoul city. The survey of incubation condition for carbon source and nitrogen source were summerized as follows: 1. One of the Aspergillius fumigatus group were isolated from damaged domestic fowl's lung. 2. In the preparation of isolation media, adding the 4 gs of silkworm pupa and Meju to Czapek's agar medium is more preferable than Austick's media (2% malt extract agar) 3. In survey of incubation condition, the growth rate and sporulation shown that higher differences according to varieties and amounts of C-source. And in the case of 20% C-source concentration shown that low growth rate than lower concentration of C-source. 4. In N-source, the growth rate indicated that some difference according to varieties of N-source, difference of growth rate demonstrated almost not shown at various amounts differences of mycelium and sporulation was only detected reversely.

• Microbiology and Biotechnology Letters
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• v.22 no.6
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• pp.565-570
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• 1994

The pullulan production and morphological change of Aureobasidium pullulans ATCC 9348 were investigated both in batch fermentation and in continuous fermentation. The best carbon source for pullulan production was sucrose among seven different carbon sources. The pullulan production of A. pullulans was increased with increasing the carbon to nitrogen ratio of the medium using sucrose as a carbon source. In batch fermentation, production of pullullan occurred following exhaustion of the nitrogen source from the medium. The continuous fermentation showed that the pullulan production was closely parallelled with cell growth and was most effective at a dilution rate of 0.06~0.07 hr$^{-1}$-. The ratio of yeast-like cells(blastospores) of A. pullulans increased with the increase of growth rate, and reached 100% over the growth rate of 0.07 hr$^{-1}$. The growth rate, within a certain range, affected not only on the cell morphology, but on the specific pullulan productivity of A. pullulans.

• Korean journal of applied entomology
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• v.2
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• pp.16-21
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• 1963

The present study was undertaken to investigate the effects of different nitrogen source and rate on the growth of Fusarium oxysporum f. vasinfectum which is known to be a noticeable fungus causing the wilt disease of both sesame and cotton in Korea. From the results of this study, It was known that different N source and rate markedly affect the growth of Fusarium oxyspsrum f. vasinfectum Among four N sourses were used in this study, nitrate-N and urea-N were appropriate N source for the growth of fungus. Above all, nitrate N was the best N source because it is utilized in more extensive range of concentration in comparison with the other N source by the fungus, On the other hand, ammonia-N is of little avail for the growth of the fungus because of the formation of unusual colonies with wavy margin and bead-like mycelial cells in addition to marked reduction of mycelial growth and B sporulation of the fungus irrespective of concentration. Judging from the formation of such an abnormal colony and bead-like mycelial cell which is known to be a characteristic of 'staling-type' growth of fungi, the effect of ammonia-N on the growth of Fusarium oxysporum f. vasinfectum is similar to that of phenoxy componnds on some other fungi previously investigated by some workers. Ammonium and nitrate also was not considered to be an appropriate source for the growth of the fungus because of the formation of colonies with slight wavy margin and appreciable reduction of mycelial growth and sporulation in higher concentration than 50meq. , although much or less masking of the irregularity of colony occurs. Therefore, ammonia N alone or any other N combined with ammonia N is of little avail for the growth of Fusarium oxysporum f. vasinfectum.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• Journal of Mushroom
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• v.3 no.2
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• pp.75-78
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• 2005

The results of studies for determining the nutrients sources of mycelial growth for optimal condition of Pleurotus cornucopiae are as follows; 1) Optimal carbon source of mycelial growth of Pleurotus cornucopiae is maltose(357mg/25ml/15d); 2) Optimal nitrogen source of mycelial growth of Pleurotus cornucopiae is peptone(347mg/25ml/15d); 3) Optimal organic acid source of mycelial growth of Pleurotus cornucopiae is glutamic acid(389mg/25ml/15d); 4) Optimal vitamin source of mycelial growth of Pleurotus cornucopiae is biotin(399mg/15d); and 5) Optimal C/N ratio for mycelial growth for determining the condition of Pleurotus cornucopiae is 40(398mg/15d).

• KSBB Journal
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• v.13 no.4
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• pp.391-398
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• 1998

The effect of culture medium copper availability on the specific growth rate(${\mu}$) and carbon conversion efficiency (CCE) was sutided for an obligatory methanotroph Methylosinus trichosporium OB3b under various combinations of carbon and nitrogen sources. Methane or methanol was used as a carbon source, and nitrate or ammonium was used as a nitrogen source. Medium copper availability determined the intracellular location or kind of methane monooxygenase (MMO), cell-membrane (particulate or pMMO) when copper was present and cytoplasm (soluble or sMMO) when copper was deficient. When methane was used as a carbon source, copper-containing medium exhibited higher ${\mu}$ and CCE than copper-free medium regardless of the kind of nitrogen source. When methanol was used as a carbon source, however, the effect of copper disappeared. Ammonium gave the higher ${\mu}$ and CCE than nitrate for both methane and methanol. Those observation suggest that there exist an important difference in energy utilization efficiency for methane assimilation between sMMO and pMMO.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.430-433
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• 2001

Erinacine which is produced from Hericium erinaceus mycelia is known as stimulating activity of nerve growth factor(NGF) synthesis. Thus. this work was concentrated on the maximum production of Hericium erinaceus mycelia. Media compositions were studied as the chemical conditions that affected cell growth. The modified media was ditermined from the results, including glucose 20g/L and yeast extract 10g/L.