• The Journal of the Korea institute of electronic communication sciences
• /
• v.5 no.1
• /
• pp.81-87
• /
• 2010

In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.3
• /
• pp.228-233
• /
• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.34-38
• /
• 1999

$PbTiO_3$(PT)thin films were prepared by simultaneous of $TiO_2$ and PbO on Si(100) substrate using metaloganic chemical vapor deposition (MOCVD). Titanium tetra-isopropoxide (TTIP) and $Pb(TMHD)_2$were used as source materials. As evaporation temperature and flow rate of TTIP were examined the crystal structure of PT thin films using XRD with setting deposition temperature, flow rate of Pb, and total flow rate of $520^{\circ}C$, 30 sccm, and 750 sccm, respectively. PT thin films could be deposited under 48~$50^{\circ}C$ and 18~22sccm of evaporation temperature and flow rate of TTIP, respectively. It was found that lead, oxygen, and silicon diffused at the iaterface between the film and the substrate.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.75-79
• /
• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• The Bulletin of The Korean Astronomical Society
• /
• v.38 no.2
• /
• pp.77.2-77.2
• /
• 2013

We present the interim results of simultaneous time monitoring observations of $^{28}SiO$ v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward 10 known water fountain sources at a post-AGB stage. The observations have been carried out from 2009 June to 2013 September using the 21m single dish radio telescopes of the Korean VLBI Network. From six sources, we detected well separated red- and blue-shifted $H_2O$ maser features with large velocity ranges more than 100 km $s^{-1}$. From four sources, we detected red- and/or blue-shifted $H_2O$ maser features depended on observational epochs. However, we could not detected SiO maser emission from any sources and any epochs. For a representative water fountain source W43A, we obtained $H_2O$ maser spectra at 17 epochs which show a clear bipolar and discontinuous mass ejections. They also showed a periodic change between red-shifted and blue-shifted peaks. However, we need a more regular and short-time interval monitoring observations in order to fix the period and peak intensity variation interval.

• Journal of the Korean Ceramic Society
• /
• v.39 no.6
• /
• pp.528-534
• /
• 2002

CaO ceramics were prepared by conventional sintering process and their hydration behaviors were evaluated by measuring weight increment on saturated water vapor pressure at ambient temperature. CaCO$_3$ and limestone were used as CaO source materials and $Al_2$O$_3$, MgO and SiO$_2$ were added as sintering agents. $Al_2$O$_3$ was a liquid phase sintering agent to increase densification and grain growth rates, whereas MgO and SiO$_2$, densification and grain growth inhibitors. Regardless of composition, all of the prepared CaO ceramics showed the improved hydration resistance as bulk density increased. Especially, when bulk density was more than 3.0 g/㎤, there was no weight increment after 120 h of hydration. Therefore, to decrease contact area between CaO and water vapor by increasing bulk density with the $Al_2$O$_3$ sintering additive was effective for the improvement of CaO hydration resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.207-207
• /
• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.05a
• /
• pp.789-790
• /
• 2013

$Er_2O_3/SiO_2$ double-layer gate dielectric shows low gate leakage current and high capacitance. In this paper, we apply $Er_2O_3/SiO_2$ double-layer gate dielectric as a charge trap layer for the first time. $Er_2O_3/SiO_2$ double-layer thickness is optimized by EDISON Nanophysics simulation tools. Using the simulation results, we fabricated Schottky-barrier silicide source/drain transistor, which has10 um/10um gate length and width, respectively. The nonvolatile device demonstrated very promising characterstics with P/E voltage of 11 V/-11 V, P/E speed of 50 ms/500 ms, data retention of ten years, and endurance of $10^4$ P/E cycles.

• The Bulletin of The Korean Astronomical Society
• /
• v.42 no.1
• /
• pp.46.3-47
• /
• 2017

We performed simultaneous VLBI observations of H2O 616-523 (22.2 GHz) and SiO v=1, 2, J=1-0 (43.1, 42.8 GHz) and v=1, J=2-1, J=3-2 (86.2, 129.3 GHz) masers toward VX Sagittarius using the Korean VLBI Network (KVN). The astrometrically registered maps of the 22.2 GHz H2O and 43.1, 42.8, 86.2 SiO masers were successfully obtained at two epochs of 2016 February 27 and 2016 March 27 by adopting the Source Frequency Phase Referencing (SFPR) method. In addition we detected 129.3 Ghz SiO maser at second epoch. These results make it possible to determine the accurate position of central star as a dynamical center of 22.2 GHz H2O maser and relative locations of 43.1, 42.8, 86.2, 129.3 GHz SiO masers. In addition, it is possible to investigate the morphological and kinematic variations of clumpy structures from SiO maser to H2O maser regions in future together with the development of asymmetric structure of H2O maser region.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.221-224
• /
• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.