• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.64-71
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• 2023

If an impedance mismatch occurs between the source and load in a Radio Frequency transmission system, reflected power is generated. This results in incomplete power transmission and the generation of Reflected Power, which returns to the Radio Frequency generator. To minimize this Reflected Power, Impedance matching is performed. Fast and efficient Impedance matching, along with converging reflected power towards zero, is advantageous for achieving desired plasma characteristics in semiconductor processes. This paper explores Impedance matching by adjusting the Vacuum Variable Capacitor of an L-type Matching Module based on the trends observed in the voltage of the Phase Sensor and Electromotive Force voltage. After assessing the impedance matching characteristics, the findings are described.

• 한국통신학회논문지
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• 제33권5C호
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• pp.413-421
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• 2008

이 논문은 최소 평균제곱오차 라플라스 양자기가 평균이나 표준편차가 불일치된 신호에 적용될 때 야기되는 평균제곱오차 왜곡과 신호대 양자화 잡음비의 점근식을 유도한다. 이들 식은 양자점의 개수 N, 평균값의 변이량 $\mu$, 양자기 설계 기준으로 사용된 표준편차에 대해 적용되는 신호의 표준편차 비율 $\rho$로써 왜곡과 신호대잡음비의 직접적인 관계를 명확히 표시하고 있다. 수치 결과에 의하면, 논문의 주 근사식은, 요율 R=$log_2N$이 6 이상인 경우에, 상당히 넓은 $\mu$와 $\rho$에 대해 신호대잡음비 참값의 1% 이내의 값을 예측하여 정확도가 아주 높은 것으로 판단된다. 이 논문을 통해 새로 발견된 점은 첫째 ${\rho}>3/2$인 분산 강불일치의 경우에 신호대잡음비는 $9/\rho$ dB/bit 비율로 증가한다는 것과 둘째 최적 균일양자기는, 비록 최적으로 설계되었지만, 분산 임계불일치보다 조금 더 불일치된 것임을 밝힌 점이다. 또 $\mu$에 의한 신호대잡음비 손실은 비교적 크지 않은 것이 관찰되었다. 여기에 유도된 공식들은, 단구간 분산이 변하는 라플라스 분포로 잘 모형되는 음성이나 음악 신호를 하나의 양자기로 양자화하는 경우에 쓰임새가 있을 것으로 사료된다.

• Progress in Superconductivity
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• 제7권1호
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• pp.69-76
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• 2005

Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about $8{\sim}10$ degree of Ni and $3at.\%W-Ni$ alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate)$_3$:Sm(tmhd)$_3$ of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of $(Y_{x}Sm_{1-x})_{2}O_3$ was achieved at the temperature higher than $500^{\circ}C$ in $O_2$ atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying $H_{2}O$ vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of $650\~750^{\circ}C$, but the (400) growth became dominant above $800^{\circ}C$. The $(Y_{x}Sm_{1-x})_{2}O_3$-buffered metallic substrates can be used as the buffer for YBCO coated conductor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.490-492
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• 2010

Center-tapped termination을 가진 stub series-termination logic (SSTL) 채널을 지원하기 위한 전압모드 송신단을 제안한다. 제안하는 송신단은 진단 모드를 지원하고 신호보전성을 향상시키기 위해 출력레벨 조절수단을 가지며, 가변 병렬 터미네이션을 사용하여 swing level을 조절하는 동안 송신단의 출력 저항을 일정하게 유지시켜준다. 또한 제안하는 송신단의 off-chip 저항은 기생 캐패시터, 인덕터에 의한 termination의 임피던스 부정합을 줄여준다. 제안된 송신단을 검증하기 위해서 $50{\Omega}$의 출력저항을 유지하면서 8-레벨의 출력을 제공하는 전압모드 송신단을 1.5V의 70nm 1-poly 3-metal DRAM공정을 이용하여 구현하였다. 수신단 termination이 존재하지 않는 SSTL 채널에서 제안하는출력레벨 조절이 가능한 송신단을 이용함으로 1.6-Gb/s에서 54%의 jitter 감소가 측정되었다.

• 한국IT서비스학회지
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• 제14권2호
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• pp.129-142
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• 2015

The purpose of this study is to suggest an effective regression testing method in order to minimize the scope of test resulting from the modification of software and to prevent mismatch of test case and test objects. As a way to improve the efficiency of regression testing which uses a change-centric testing technique, the method flow is analyzed and grasped through a static analysis based on source code in order to identify modified parts. After the order of priority is set according to the results of user action log-based dynamic analysis on identified regression testing objects, test effect can be raised by adjusting the order of priority using code complexity. Quality assurance coverage can be checked using the user action log suggested in this study, and the progress of test and whether or not each function has been verified can be checked, too. In addition, by minimizing test parts and adjusting the order of test, costs and time can be saved, making it possible to conduct regression testing effectively.

• 전력전자학회논문지
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• 제16권2호
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• pp.105-113
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• 2011

태양광 발전 시스템이 대용량화됨에 따라 태양전지 어레이 구성 시 부정합(mismatch) 문제가 대두되는 가운데, 태양전지 모듈을 직접 계통에 연계하는 AC 모듈형 태양광 모듈 집적형 전력변환장치(PV-MIC)에 관한 연구가 지속되고 있다. PV-MIC는 수명 및 고효율이 가장 큰 문제이며 이 문제를 해결하기 위해서 본 논문에서는 ZVS 동작을 통하여 스위칭 손실을 저감시키고 입력전류 리플감소를 통하여 입력 커패시턴스를 저감할 수 있는 능동 클램프 전류원 하프 브릿지 컨버터를 적용한 PV-MIC를 제안하고, 이에 관한 제어분담 및 설계에 대하여 고찰한다.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• 한국생물정보학회:학술대회논문집
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• 한국생물정보시스템생물학회 2004년도 The 3rd Annual Conference for The Korean Society for Bioinformatics Association of Asian Societies for Bioinformatics 2004 Symposium
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• pp.77-85
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• 2004

A significant portion (about 8% in human genome) of mammalian mRNA sequences contains AU(Adenine and Uracil) rich elements or AREs at their 3' untranslated regions (UTR). These mRNA sequences are usually stable. ARE motifs are assorted into three classes. The importance of AREs in biology is that they make certain mRNA unstable. We analyzed the occurrences of AREs and Alu, and propose a possible mechanism on how human mRNA could acquire and keep A REs at its 3' UTR originated from Alu repeats. Interspersed in the human genome, Alu repeats occupy 5% of the 3' UTR of mRNA sequences. Alu has poly-adenine (poly-A) regions at the end that lead to poly -thymine (poly-T) regions at the end of its complementary Alu. It has been discovered that AREs are present at the poly -T regions. In the all ARE's classes, 27-40% of ARE repeats were found in the poly -T region of Alu with mismatch allowed within 10% of ARE's length from the 3' UTRs of the NCBI's reference m RNA sequence database. We report that Alu, which has been reported as a junk DNA element, is a source of AREs. We found that one third of AREs were derived from the poly -T regions of the complementary Alu.

• Nuclear Medicine and Molecular Imaging
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• 제42권2호
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• pp.172-180
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• 2008

PET/CT fused image with anatomical and functional information have improved medical diagnosis and interpretation. This fusion has resulted in more precise localization and characterization of sites of radio-tracer uptake. However, a motion during whole-body imaging has been recognized as a source of image quality degradation and reduced the quantitative accuracy of PET/CT study. The respiratory motion problem is more challenging in combined PET/CT imaging. In combined PET/CT, CT is used to localize tumors and to correct for attenuation in the PET images. An accurate spatial registration of PET and CT image sets is a prerequisite for accurate diagnosis and SUV measurement. Correcting for the spatial mismatch caused by motion represents a particular challenge for the requisite registration accuracy as a result of differences in PET/CT image. This paper provides a brief summary of the materials and methods involved in multiple investigations of the correction for respiratory motion in PET/CT imaging, with the goal of improving image quality and quantitative accuracy.