• 제목/요약/키워드: Solid-State Electrochemical Device

검색결과 19건 처리시간 0.026초

Field-induced Resistive Switching in Ge25Se75 Based ReRAM

  • 김장한;남기현;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.413-414
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    • 2012
  • Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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Ge25Se75-based ReRAM 소자의 전계에 의한 저항 변화에 대한 연구 (Field-induced Resistive Switching in Ge25Se75-based ReRAM Device)

  • 김장한;남기현;정홍배
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.182-186
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    • 2012
  • Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

Field-induced Resistive Switching in Ge-Se Based ReRAM

  • 이규진;엄준경;정지수;장혜정;김장한;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.342-342
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    • 2012
  • Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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고에너지 전고체 전해질을 위한 나노스케일 이종구조 계면 특성 (Nanoscale Characterization of a Heterostructure Interface Properties for High-Energy All-Solid-State Electrolytes )

  • 황성원
    • 반도체디스플레이기술학회지
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    • 제22권1호
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    • pp.28-32
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    • 2023
  • Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

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Ionic liquids to the rescue? Overcoming the ionic conductivity limitations of polymer electrolytes

  • Hendcrson W.A.;Shin J.H.;Alessandrini F.;Passcrini S.
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2003년도 전지기술심포지움
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    • pp.153-168
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    • 2003
  • Polymer electrolytes - solid polymeric membranes with dissolved salts - are being intensively studied for use in all-solid-state lithium-metal-polymer consumer electronic device. The low ionic conductivity at room temperature of existing polymer electrolytes, however, has seriously hindered the development of such batteries for many applications. The incorporation of salts molten at room temperature (room temperature ionic liquids or RTILs) into polymer electrolytes may be the necessary solution to overcoming the inherent ionic conductivity limitations of 'dry' polymer electrolytes.

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연료전지의 개발 동향 (Status of Fuel Cell Technology)

  • 김귀열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.3-4
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    • 2007
  • Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. Fuel cell is a modular, high efficient and environmentally energy conversion device, it has become a promising option to replace the conventional fossil fuel based electric power plants. This paper offers some new perspectives on fuel cell development and commercialization which come from the broad consideration of the commercialization efforts of the entire fuel cell industry.

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전고체형 에너지 저장 매체 제조를 위한 이온성 액체 기반의 고체 전해질과 탄소나노복합체 기반의 전극소재 개발 (Development of ionic liquid based solid state electrolyte and nanocarbon composite for all solid-state energy storage device)

  • 김용렬;강혜주;정현택
    • 한국응용과학기술학회지
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    • 제36권4호
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    • pp.1253-1258
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    • 2019
  • 고분자를 기반으로 하는 고체 전해질은 수퍼커패시터, 배터리, 센서, 액추에이터 등 다양한 전기화학 소자에 응용이 가능한 소재로써, 기존 고분자 전해질의 낮은 이온전도도를 향상시키기 위해서 다양한 이온성 액체 기반의 고체 전해질에 관한 연구가 활발히 진행 중에 있다. 이온성 액체의 높은 전기적 특성 및 전기화학적, 열적 안정성과 고분자의 우수한 기계적인 강도를 활용한 젤 상태의 고체 전해질인 이온젤은 차세대 웨어러블 및 플렉시블 전자소자에 응용되어 연구되고 있다. 따라서 본 연구에서는 이러한 이온성 액체와 고분자 기반의 고체 전해질을 제조하고 특성을 분석하여 탄소나노복합체 기반의 전극에 적용하여 다양한 전자소자에 응용이 가능한 이온전도도 및 안정성이 향상된 이온성 액체 기반의 고체 전해질을 개발하고자 한다. 제조된 고체전해질은 전기화학적 임피던스법을 이용하여 이온 전도도를 측정하여 보았으며 이온성 액체를 첨가하여 제조한 고체전해질의 이온 전도도가 1.26 × 10-1 S/cm 로 확인되었다. 또한 제조된 고체 전해질을 이용하여 전고체형 수퍼커패시터를 제조하여 전기화학적 특성을 비교하여 보았으며, 수퍼커패시터의 전기화학적 특성 역시 이온성 액체를 첨가하여 제조된 고체 전해질을 사용하였을 때 향상된 전기화학적 특성을 나타내었다.

고체 수소이온 전도체를 이용한 중온형 연료전지 개발 (Development of Intermediate Temperature Fuel Cell Using a Solid Proton Conductor)

  • 서동호;김홍록;;설용건
    • 전기화학회지
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    • 제11권1호
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    • pp.22-32
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    • 2008
  • 청정에너지의 중요성이 부각됨에 따라 수소연료를 활용한 고효율, 무공해 전력 공급원인 연료전지에 대한 관심이 증가하고 있다. 연료전지는 전기화학 반응에 의한 화학에너지를 직접 전기에너지로 변환시키는 장치로 자동차, 우주항공, 산업 및 가정용 발전 등에 적용할 수 있는 잠재력이 있다. 최근 재료 및 에너지 변환공정 차원에서 바람직한 $200{\sim}500^{\circ}C$의 온도범위에서 작동하는 중온형 연료전지에 대한 새로운 인식과 이 온도범위에서 사용 가능한 수소이온 전도성 물질의 개발 필요성이 요구되고 있다. 본 논문은 고체 수소이온 전도체의 특성과 기술 현황을 소개하고, perovskite형 고체 무기 산화물을 이용한 중온형 연료전지 응용에 관한 연구에 대하여 고찰하였다.

나시콘 전류검출형 NO2 센서의 성능개선 (Improvement of Sensing Performance on Nasicon Amperometric NO2 Sensors)

  • 김귀열
    • 한국전기전자재료학회논문지
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    • 제20권10호
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    • pp.912-917
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    • 2007
  • Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. An amperometric gas sensor usually generates sensing signal of electric current along the proportion of the concentration of target gas under the condition of limiting current. For narrow variations of gas concentration, the amperometric gas sensor can show higher precision than a potentiometric gas sensor does. In additional, cross sensitivities to interfering gases can possibly be mitigated by choosing applied voltage and electrode materials properly. In order to improve the sensitivity to $NO_2$, the device was attached with Au reference electrode to form the amperometric gas sensor device with three electrodes. With the fixed bias voltage being applied between the sensing and counter electrodes, the current between the sensing and reference electrodes was measured as a sensing signal. The response to $NO_2$ gas was obviously enhanced and suppressed with a positive bias, respectively, while the reverse current occurred with a negative bias. The way to enhance the sensitivity of $NO_2$ gas sensor was thus realized. It was shown that the response to $NO_2$ gas could be enhanced sensitivity by changing the bias voltage.

Direct Microwave Sintering of Poorly Coupled Ceramics in Electrochemical Devices

  • Amiri, Taghi;Etsell, Thomas H.;Sarkar, Partha
    • Journal of Electrochemical Science and Technology
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    • 제13권3호
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    • pp.390-397
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    • 2022
  • The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.