• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.403-405
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• 2008

Solid state lighting 용 적색 형광체로 적용하기 위하여 $BaTiO_3$:$Pr^{3+}$:$Ga^{3+}$를 다음과 같이 합성하였다. 출발 물질로 $BaCO_3$,$Pr(NO_3)_3$ $6H_2O$, $TiO_2$, $Ga_2O_3$을 사용 하였으며, $BaTiO_3$:$Pr^{3+}\;_x$(x=$0.001{\sim}0.2$):$Ga^{3+}\;_y$(y=0.05, 0.1, 0.5 1, 2, 3)를 각각의 조성대로 혼합한 후 $600^{\circ}C$에서 10시간 전처리 하였다. 전처리한 시료를 시편으로 제조하여 $1200^{\circ}C$ 공기중에 4시간 소성하여 최종물질인 $BaTiO_3$:$Pr^{3+}\;_x$:$Ga^{3+}\;_y$을 얻었다. 이 화합물을 X-선 회절 분석 결과 공간군 P4MM을 갖는 페로브스카이트임을 알 수 있었다. 이 화합물을 적색형광체로 적용하기 위해 PL과 PLE측정을 통하여 형광특성을 알아본 결과 618nm에서 x=0.011, y=1.0 일 때 특성이 가장 우수한 것으로 나타났다.

• 한국세라믹학회지
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• 제54권5호
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• pp.422-428
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• 2017

Single-phase yellow phosphor, $CaGd_{2-x}ZrSc(AlO_4)_3:xCe^{3+}$ ($CGZSA:Ce^{3+}$), possessing cubic symmetry with varied $Ce^{3+}$ concentrations, was synthesized using the solid-state reaction method. The samples were characterized using X-ray diffraction (XRD), excitation spectra, emission spectra, thermal quenching, and decay curves. The cubic phase of $CGZSA:Ce^{3+}$ phosphor was confirmed via XRD analysis. The photoluminescence spectra of $CGZSA:Ce^{3+}$ phosphor demonstrated that the phosphor could be excited at the wavelength of 440 nm; a broad yellow emission band was centered at 541 nm. These results indicate that the phosphors are adequately excited by blue light and have the potential to function as yellow-emitting phosphors for applications in white light-emitting diodes.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.1379-1384
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• 2009

High power light emitting diode(LEDs), a strong candidate for the next generation general illumination applications are of interest. With major advantages of power saving, increased life expectancy and faster response time over traditional incandescent bulb, the LEDs are rapidly taking over many applications such as LCD backlighting, traffic light, automotive lighting, signage, etc. The increased electrical currents used to drive the LEDs have focused more attention on the thermal management because the efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. There exist some problems that are caused by heat generation in the LED package, such as wire breakage, yellowing of epoxy resin, lifted chip caused by reflow of thermal paste chip attach and interfacial separation between LED package and silicon resin. The goal of this study is to analyze high power LED thermal properties of using pulsating heat pipe.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.415.2-415.2
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• 2014

Cost-effective, robust devices for solid-state lighting industry that converts electricity to light revolutionize the current lighting industry. Phosphor materials used in these devices should be synthesized in a low-cost and effective method for use in WLEDs. In this presentation, the synthesis of Eu3+ ions doped BaMoO4 phosphor samples by a facile synthesis process for red component of WLEDs will be shown. The tetragonal phase of the host lattice was substantiated by the X-ray diffraction patterns. The morphological studies were carried out by using a field-emission scanning electron microscope and transmission electron microscope. These confirmed the formation of a shuttle like particles with perpendicular protrusions in the middle of the particle. The photoluminescence (PL) properties exhibited good emission with a high asymmetry ratio when excited with ultraviolet B wavelengths (~ 280-315 nm). The cathodoluminescence (CL) spectra showed similar results to the PL spectra, indicating the rich red emission. The results suggest that this phosphor is a good material as red region component in the development of tri-band UV excitation based WLEDs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.69.2-69.2
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• 2012

Graphene films have a strong potential to replace indium tin oxide anodes in organic light-emitting diodes (OLEDs), to date. However, the luminous efficiency of OLEDs with graphene anodes has been limited by a lack of efficient methods to improve the low work function and reduce the sheet resistance of graphene films to the levels required for electrodes. Here, we fabricate flexible OLEDs by modifying the graphene anode to have a high work function and low sheet resistance, and thus achieve extremely high luminous power efficiencies (37.2 lm/W in fluorescent OLEDs, 102.7 lm/W in phosphorescent OLEDs), which are significantly higher than those of optimized devices with an indium tin oxide anode (24.1 lm/W in fluorescent OLEDs, 85.6 lm/W in phosphorescent OLEDs). We also fabricate flexible white OLED lighting devices using the graphene anode. These results demonstrate the great potential of graphene anodes for use in a wide variety of high-performance flexible organic optoelectronics.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.51-56
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• 2019

LuAG:Ce(Lu₃Al₅O₁₂:Ce³⁺) nano phosphor were synthesized by applying the coprecipitation method. It is used to increase the color rendering of phosphor ceramic plate for high power LEDs and laser lighting. Internal quantum efficiency and absorption of LuAG:Ce nano phosphor are 51.5 % and 64.4 %, respectively, which is higher than the previously studied nano phosphors. The maximum absorption wavelength of this phosphor is 450 nm blue light, and the emission wavelength is 510 nm. The emission wavelength shifted to longer wavelength when the concentration of Ce increased in the heat treatment of the reducing atmosphere. Thermal quenching of LuAG nano phosphor was 70 % at 200 ℃, it was explained by their significant quenching of all raman scattering modes, implying the restriction of electron-phonon couplings caused by their defects.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.86-90
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• 2017

$Tb^{3+}$ or $Eu^{3+}$ or $Ce^{3+}$-doped $CaYAlO_4$ phosphor were synthesized by solid-state method. $CaYAlO_4:Tb^{3+}$ is shown that the $Tb^{3+}$-doping concentration has a significant effect on the $^5D_4/^5D_3{\rightarrow}7F_J$ (J=6,...,0) emission intensity of $Tb^{3+}$. The $CaYAlO_4:Tb^{3+}$ phosphors show tunable photoluminescence from blue to yellow with the change of doping concentration of $Tb^{3+}$ ions. The $CaYAlO_4:Eu^{3+}$ phosphors exhibit a red-orange emission of $Eu^{3+}$ corresponding to $^5D_0$, $_{1,2}{\rightarrow}^7F_J$ (J=4,...,0) transitions. The $CaYAlO_4:Ce^{3+}$ phosphors show a blue emission due to $Ce^{3+}$ ions transitions from the 5d excited state to the $^2F_{5/2}$ and $^2F_{7/2}$ ground states. The decay time of $CaYAlO_4:Tb^{3+}$ phosphors decrease from 1.33 ms to 0.97 ms as $Tb^{3+}$ concentration increases from 0.1 mol% to 7 mol%. The decay time of $CaYAlO_4:Eu^{3+}$ phosphors increase from 0.94 ms to 1.17 ms as $Eu^{3+}$ concentration increases from 1 mol% to 9 mol%.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.69-72
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• 2014

White LEDs, based on blue LED chips coated with a yellow emitting phosphor (YAG:Ce), have several disadvantages. In this paper, we report the improvement in CRI [Color Rendition Index] using $GdAl_5O_{12}:Ce$ (GdAG:Ce) and related phosphors for blue LEDs. A modified combustion synthesis route using mixed fuel was used for synthesis route. By using this procedure, we formed the desired compounds in a single step. LEDs were then fabricated by coating the blue LED chips (CREE 470 nm, 300 micron) with the GdAG:Ce phosphor dispersed in epoxy resin. The CRI typically between 65~70 for the YAG:Ce based LED was improved to 87 for LEDs fabricated from the Gd(Al,Ga)G phosphors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.