• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.4
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• pp.605-610
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• 2021

Wireless charging method using a laser is considered as the most efficient method at a long distance of the wireless charging method. Combining long-range laser wireless charging technology with wireless communication technology will make it possible to use it for a variety of applications. Accordingly, this paper shows the results of research and experiments on wireless charging and wireless communication simultaneously based on a laser. This technique uses a laser as a light source for E/O(: Electric-to-Optical) conversion at the transmitter for optical wireless power transmission. In the experimental results, the optical power transmission using a 100 mW laser transmitter and a solar cells receiver showed a DC-to-DC efficiency of 1.9 %, wireless optical communication showed a transmission speed of up to 90 kbps when the transmission distance is 15 m.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.505-512
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• 2014

A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.77-85
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• 2011

The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.2
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• pp.149-155
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• 2023

Photovoltaic power generation is the most familiar power generation facility among new and renewable energies, and its supply began to expand about 10 years ago, and at this point, interest in solutions and technologies for system maintenance management is increasing. In particular, it is necessary to take measures to maximize the overall efficiency of the solar power generation system, whether or not there is an abnormality in the solar power generation system, and when to replace parts. The PV inverter, one element of the photovoltaic power generation system, is a power conversion system that relies on power switching devices, and DC-Link capacitors are used according to the configuration of DC/DC converters and DC-AC inverters. These DC capacitors also affect system safety (Safety) through renewable energy facilities due to the decrease in power generation of PV inverters, power loss, and increase in harmonics (THD, total distortion of AC output current) due to aging and deterioration due to long-term use. factors can be analyzed. Therefore, in this paper, the PV inverter operating characteristics according to the DC capacitor capacity state currently operating in the photovoltaic power generation system were considered, and research contents were proposed to secure the safety and reliability of renewable energy facilities.

• Membrane Journal
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• v.25 no.6
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• pp.530-537
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• 2015

Photovoltaic (PV) modules are environmentally energy conversion devices to generate electricity via photovoltaic effect of semiconductors from solar energy. One of key elements in PV modules is "Backsheet," a multilayered barrier film, which determines their lifetime and energy conversion efficiency. The representative Backsheet is composed of chemically resistant poly(vinyl fluoride) (PVF) and cheap poly(ethylene terephthalate) (PET) films used as core and skin materials, respectively. PVF film is too expensive to satisfy the market requirements to Backsheet materials with production cost as low as possible. The promising alternatives to PVF-based Backsheet are hydrocarbon Backsheets employing semi-crystalline PET films instead of PVF film. It is, however, necessary to provide improved barrier property to water vapor to the PET films, since PET films are suffering from hydrolytic decomposition. In this study, a polyurethane adhesive with reduced water vapor permeation behavior is developed via a homogeneous distribution of hydrophobic silica nanoparticles. The modified adhesive is expected to retard the hydrolysis of PET films located in the core and inner skin. To clarify the efficacy of the proposed concept, the mechanical properties and electrochemical PV performances of the Backsheet are compared with those of a Backsheet employing the polyurethane adhesive without the silica nanoparticles, after the exposure under standard temperature and humidity conditions.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.113-117
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• 2016

Recently, hydrogen is regarded as important energy in the future, because it is clean and renewable. The photoelectrochemical (PEC) system, which produce hydrogen using water splitting by solar energy, is one of the most promising energy systems because it has abundant energy sources and good theoretical efficiency. GaN has recently been regarded as suitable photoelectrode that could be used to split water to generate hydrogen without extra bias because its band edge position include water redox potential ($V_{redox}=1.23$ vs. SHE). GaN also shows considerable corrosion resistance in aqueous solutions and it is possible to control its properties, such as structure, band gap, and catalyst characteristics, in order to improve solar energy conversion efficiency. But, even if the band edge position of GaN make PEC reaction facilitate without bias, the overpotential of oxygen evolution reaction could reduce the efficiency of system. One of the ways to decrease overpotential is introduction of co-catalyst on photoelectrode. In this paper, we will investigate the effect of manganese dioxide ($MnO_2$) as a co-catalyst. $MnO_2$ particles were dispersed on GaN photoelectrode by spincoater and analyzed properties of the PEC system using potentiostat (PARSTAT4000). After coating $MnO_2$, the flat-band potential ($V_{fb}$) and the onset voltage ($V_{onset}$) were moved negatively by 0.195 V and 0.116 V, respectively. The photocurrent density increased on $MnO_2$ coated sample and time dependence was also improved. These results showed $MnO_2$ has an effect as a co-catalyst and it would enhance the efficiency of overall PEC system.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.