• 한국전기전자재료학회논문지
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• 제34권6호
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• pp.433-437
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• 2021

As the demand for new and renewable energy increases due to the depletion of fossil fuels, solar power generation, a core energy source for new and renewable energy, requires research on solar modules for high output power generation. In this paper, the electrical characteristics of solar cell strip at the edge and in the center of single-crystal silicon having a semi-square shape were analyzed. The cell strip located in the center showed the efficiency increase by 0.26% compared to the cell strip at the edge of the solar cell. A shingled photovoltaic module was manufactured for each cell strip. As a result, the output power of the module using the cell strip located in the center was higher by 0.992%.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.10-15
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• 2020

Recently, with the increase in the use of urban solar power, solar modules are required to produce high power in limited areas. In this report, we proposed the fabrication of a high-power photovoltaic module using shingles technology, and developed accurate string characteristic simulations based on circuit modeling. By comparing the resistance components between the interconnected cells and the cell strips, the ECA resistance was determined to be 0.003 Ω. Based on the equivalent circuit of the modeled shingled string, string simulation was performed according to the type of cell strip. As a result, it was determined that the cell efficiency of the 4-cell strip was the highest at 19.66%, but the efficiency of the string simulated with the 6-cell strip was the highest at 20.48% in the string unit.

• 대한기계학회논문집B
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• 제37권9호
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• pp.823-828
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• 2013

실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.