• 제목/요약/키워드: Solar Transmission

검색결과 268건 처리시간 0.034초

Photovoltaic characteristics of Si quantum dots solar cells

  • Ko, Won-Bae;Lee, Jun-Seok;Lee, Sang-Hyo;Cha, Seung-Nam;Hong, Jin-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.489-489
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    • 2011
  • The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

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ALD를 이용하여 살펴본 CdSe/CdS Quantum Dot-sensitized Solar Cell에서의 TiO2 Passivation 효과

  • 박진주;이승협;설민수;용기중
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.370-370
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    • 2011
  • ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

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$CdS/CuInSe_2$태양전지의 Window Layer로 쓰이는 CdS박막의 진공증착법에 따른 전기적.광학적 성질 (Electrical and Optical Properties of Vacuum-Evaporated CdS Films for the Window Layer of $CdS/CuInSe_2$ Solar Cells.)

  • 남희동;이병하;박성
    • 한국결정학회지
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    • 제8권2호
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    • pp.105-110
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    • 1997
  • CdS/CuInSe2 태양전지에서 창측재료로 1μm 두께의 CdS박막을 1x10-3mTorr의 진공하에서 CdS source 온도를 800-1100'C로 하고 기판의 온도를 50-200℃로하여 진공증차겁으로 제조하였다. 증착된 CdS박막의 구조적, 전기적, 광학적 특성조사는 x-ray diffractometer(XRD), scanning electron microscope(SEM), 전기비저항 측정, Hall measurement 그리고 optical transmission spectra로 행하였고, 각막들의 성분분석은 energy dispersive analysis of X-ray (EDAX)를 가하나, 광투과도는 감소하였다. 이때 증착된 CdS 박막들은 모두 hexagonal 구조를 가지고 있었으며, 결정성은 기판유리를 딸 (002)면으로 형성되었다. CdS Source 온도가 1000℃에서 증착된 CdS 박막이 0.9(S/cm)의 가장 높은 전기 전도도를 나타내었다. 또한 기판온도를 100'C로 제조한 CdS 박막이 전기비저항은 40(Ω,cm)이었고 광투과도는 80% 이상의 값을 나타내어 CdS/CuInSe2 태양전지의 창측재료로 적합했다.

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단열성 시험 방법을 통한 진공유리의 구성 및 필러 배치에 따른 열 성능 평가 (The Evaluation of Thermal Performance of Vacuum Glazing by Composition and the Pillar Arrangement through Test Method of Thermal Resistance)

  • 조수;김석현;엄재용
    • 한국태양에너지학회 논문집
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    • 제35권1호
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    • pp.61-68
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    • 2015
  • The advanced counties effort to the supplement of the zero energy buildings for the global building energy saving. In the middle of the development of passive technology, the government has to effort to the energy saving of buildings by enhanced performance of the window thermal insulation. By the method of enhanced performance of window thermal insulation, the use of vacuum double glazing saves the energy consumption in building. This glazing has low U-value(heat transmission coefficient) than normal double glazing. The vacuum glazing enhanced thermal insulation performance by vacuum space of between the glass and glass. For this vacuum glazing, pillar maintain the space between glass and glass. But this structure cause the raising the heat transmission coefficient in pillar approaching glass. This study confirmed the U-value by the test method of thermal resistance for windows and doors. Also this study confirmed the variation of heat transmission coefficient by the structure of vacuum glazing. And this study measured the surface temperature of the vacuum glazing about pillar approaching glass and vacuum space in cool chamber and hot box. That result, this study confirmed U-value of $0.422W/m^2{\cdot}K$ of vacuum glazing. Also this study confirmed U-value of $0.300{\sim}0.422W/m^2{\cdot}K$ by various the structure of vacuum glazing. And this study confirmed the heat flow in pillar approaching glass.

$Cu_2ZnSnS_4$ Thin Film Absorber Synthesized by Chemical Bath Deposition for Solar Cell Applications

  • Arepalli, Vinaya Kumar;Kumar, Challa Kiran;Park, Nam-Kyu;Nang, Lam Van;Kim, Eui-Tae
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.35.1-35.1
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    • 2011
  • New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

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태양광 모듈의 과열 방지용 공랭형 스털링기관 냉각 시스템 개발 (Development of a New Air Cooling System Utilizing the Stirling Engine for Preventing Solar Cell from Overheating)

  • 김형은;박찬우;추진경;금동엽;박실로;김정민;김대진
    • 대한기계학회논문집 C: 기술과 교육
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    • 제2권1호
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    • pp.57-63
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    • 2014
  • 태양광 모듈의 과열을 방지하여 효율을 향상시키기 위해 스털링기관을 이용한 새로운 공랭식 냉각 시스템을 개발하였다. 베타 타입 스털링기관에 냉각팬을 연결하고 태양광 모듈의 뒷면에 반원형의 에어가이드를 부착함으로써 스털링기관 작동에 의해 발생된 강제대류가 에어가이드를 따라 이동하면서 태양광 모듈의 후면을 냉각하는 방식이다. 할로겐 조명을 활용한 하절기 모사 성능 평가 실험 결과 본 연구를 통해 개발된 새로운 냉각시스템을 적용할 경우 태양광 모듈의 온도가 냉각을 적용하지 않은 경우에 비해 약 $12^{\circ}C$ 낮아지고 출력 전압은 약 25% 향상되었다.

Heterojunction Quantum Dot Solar Cells Based on Vertically Growth TiO2 Anatase Nanorod Arrays with Improved Charge Collection Property

  • Chung, Hyun Suk;Han, Gill Sang;Park, So Yeon;Lee, Dong Geon;Jung, Hyun Suk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.466.2-466.2
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    • 2014
  • The Quantum dot (QD) solar cells have been under active research due to their high light harvesting efficiencies and low fabrication cost. In spite of these advantages, there have been some problems on the charge collection due to the limitation of the diffusion length. The modification of advanced nanostructure is capable of solving the charge collection problem by increasing diffusion length of electron. One dimensional nanomaterials such as nanorods, nanowires, and nanotubes may enhance charge collection efficiency in QD solar cells. In this study, we synthesized $TiO_2$ anatase nanorod arrays with length of 200 nm by two-step sol-gel method. The morphology and crystal structure for the nanorod were characterized by using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The anatase nanorods are single-crystalline and possess preferred orientation along with (001) direction. The photovoltaic properties for the heterojunction structure QD solar cells based on the anatase nanorod were also characterized. Compared with conventional $TiO_2$ nanoparticle based QD solar cells, these nanostructure solar cells exhibited better charge collection properties due to long life time measured by transient open circuit studies. Our findings demonstrate that the single crystalline anatase nanorod arrays are promising charge transport semiconductors for heterojunction QD solar cells.

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Metal-induced Crystallization of Amorphous Ge on Glass Synthesized by Combination of PIII&D and HIPIMS Process

  • Jeon, Jun-Hong;Kim, Eun-Kyeom;Choi, Jin-Young;Park, Won-Woong;Moon, Sun-Woo;Lim, Sang-Ho;Han, Seung-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.144-144
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    • 2012
  • 최근 폴리머를 기판으로 하는 고속 Flexible TFT (Thin film transistor)나 고효율의 박막 태양전지(Thin film solar cell)를 실현시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)와 긴 이동거리를 가지는 다결정 반도체 박막(poly-crystalline semiconductor thin film)을 만들고자 하고 있다. 지금까지 다결정 박막 반도체를 만들기 위해서는 비교적 높은 온도에서 장시간의 열처리가 필요했으며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮추어 주는 metal (Al, Ni, Co, Cu, Ag, Pd, etc.)을 이용하여 결정화시키는 방법(MIC)이 많이 연구되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔류 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도와 이동거리를 감소시키는 단점이 있다. 이에 본 실험은, 종래의 MIC 결정화 방법에서 이용되어진 금속 증착막을 이용하는 대신, HIPIMS (High power impulse magnetron sputtering)와 PIII&D (Plasma immersion ion implantation and deposition) 공정을 복합시킨 방법으로 적은 양의 알루미늄을 이온주입함으로써 재결정화 온도를 낮추었을 뿐 아니라, 잔류하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GIXRD (Glazing incident x-ray diffraction analysis)와 Raman 분광분석법을 사용하였고, 잔류하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS (X-ray photoelectron spectroscopy)를 통한 분석을 하였다. 또한, 표면 상태와 막의 성장 상태를 확인하기 위하여 HRTEM(High resolution transmission electron microscopy)를 통하여 관찰하였다.

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수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용 (Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells)

  • 박준형;명승엽;이가원
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.1009-1014
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    • 2012
  • Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

Phenological Changes of Wheat Cultivars with Plant Type and Plant Spacing

  • Lee Choon-Woo;Baek Seong-Bum;She Sea-Jung
    • 한국작물학회지
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    • 제50권5호
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    • pp.332-335
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    • 2005
  • The three Korean wheat cultivars with different plant types; the erect, the middle and the creeping growth habit, were studied for their utilization to solar radiation, temperature changes on the furrow and to provide optimum planting space for producing the high yield in 2003. The average solar radiation rate was lowest for creeping type ($39.2\%$) and highest for erect type ($75.8\%$) The correlation coefficient between the coverage rate and the solar transmission rate was r = 0.8624 which was significant at $5\%$ level. The relative growth of the plant, tiller rate and leaf size was increased in the erect and the middle type at lower plant density, while no change on plant growth at creeping type regardless of plant density. The increase of leaf size in the lower plant density was due to longer flag and the first leaf than those of other plant types. The temperature on the furrow of growing plants was changed by the canopy. The changes in temperature pattern on the furrow according to plant types during winter season was different compared to the non plant ground. The temperature of the nonplant ground was the lowest due to solar reduction increasing the amount of cool air flowing in the furrow.