• Journal of Korea Multimedia Society
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• v.19 no.4
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• pp.725-735
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• 2016

High-resolution satellite images are used in the fields of mapping, natural disaster forecasting, agriculture, ocean-based industries, infrastructure, and environment, and there is a progressive increase in the development and demand for the applications of high-resolution satellite images. Users of the satellite images desire accurate quality of the provided satellite images. Moreover, the distinguishability of each image captured by an actual satellite varies according to the atmospheric environment and solar angle at the captured region, the satellite velocity and capture angle, and the system noise. Hence , NIIRS must be measured for all captured images. There is a significant deficiency in professional human resources and time resources available to measure the NIIRS of few hundred images that are transmitted daily. Currently, NIIRS is measured every few months or even few years to assess the aging of the satellite as well as to verify and calibrate it [3]. Therefore, we develop an algorithm that can measure the national image interpretability rating scales (NIIRS) of a typical satellite image rather than an artificial target satellite image, in order to automatically assess its quality. In this study, the criteria for automatic edge region extraction are derived based on the previous works on manual edge region extraction [4][5], and consequently, we propose an algorithm that can extract the edge region. Moreover, RER and H are calculated from the extracted edge region for automatic edge region extraction. The average NIIRS value was measured to be 3.6342±0.15321 (2 standard deviations) from the automatic measurement experiment on a typical satellite image, which is similar to the result extracted from the artificial target.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.2-19.2
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• 2010

Printed electronics using printing process has broadened in all respects such as electrics (lighting, batteries, solar cells etc) as well as electronics (OLED, LCD, E-paper, transistor etc). Copper is considered to be a promising alternative to silver for printed electronics, due to very high conductivity at a low price. However, Copper is easily oxidized, and its oxide is non-conductive. This is the highest hurdle for making copper inks, since the heat and humidity that occurs during ink making and printing simply accelerates the oxidation process. A variety of chemical treatments including organic capping agents and metallic coating have been used to slow this oxidation. We have established synthetic conditions of copper nanoparticles (CuNPs) which are resistant to oxidation and average diameter of 20 to 50nm. Specific resistivity should be less than $4\;{\mu}{\Omega}{\cdot}cm$ when sintered at lower temperature than $250^{\circ}C$ to be able to apply to conductive patterns of FPCBs using ink-jet printing. Through this study, the parameters to control average diameter of CuNPs were found to be the introduction of additive agent, the feeding rate of reducing agent, and reaction temperature. The CuNPs with various average diameters (58, 40, 26, 20nm) could be synthesized by controlling these parameters. The dispersed solution of CuNPs with an average size of 20 nm was made with nonpolar solvent containing 3 wt% of binder, and then coated onto glass substrate. After sintering the coated substrates at $250^{\circ}C$ for 30 minutes in nitrogen atmosphere, metallic copper film resulted in a specific resistivity of $4.2\;{\mu}{\Omega}{\cdot}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.108-111
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• 2002

CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.1
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• pp.73-78
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• 2010

In this paper, the analysis of the harmonics of distribution power system interconnected with DG(distributed generation) is simulated by using PSCAD/EMTDC and evaluated the harmonics. The modeling system for simulation is similar to the actual distribution system, and solar power system. The simulation analyses are performed at connection points for each sector. Harmonic standards of interconnection with DG (IEEE Std 1547 and IEEE Std 519) are applied to the evaluation algorithm, converted the simulated data through FFT method, evaluated by THD and TDD separately. The harmonic contents in the case of without DG and each sector with DG are evaluated and compared. The results of evaluation showed the effect that the harmonic contents are appropriated at all sector with DG (without DG) in the distribution power systems but the large induction motor(50KW) is increased the harmonic contents.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Journal of Astronomy and Space Sciences
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• v.19 no.3
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• pp.215-224
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• 2002

This paper describes EGSE design for the small satellite such like KOMPSAT-2 satellite. Recent design trend of small satellite and EGSE is to take short development time and less cost. For this purpose, the design for KOMPSAT-2 satellite and EGSE are not much modified from KOMPSAT-1 heritage. It means that it is able to be accommodated the verified hardware and software modules used in KOMPSAT-1 satellite program if possible. The objective of EGSE is to provide hardware and software for efficient electrical testing of integrated KOMPSAT-2 satellite in three general categories. (1) Simulators for ground testing (e.g. solar-simulation power, earth scenes, horizons and sun sensor). (2) Ground station type satellite data acquisition and processing test sets. (3) Overall control of satellite using hardline datum. In KOMPSAT (KOrea Multi-Purpose SATellite) program, KOMPSAT-2 EGSE was developed to support satellite integration and test activities. The KOMPSAT-2 EGSE was designed in parallel with satellite design. Consequently, the KOMPSAT-2 EGSE was based on the KOMPSAT-1 heritage since the spacecraft design followed the heritage. The KOMPSAT-2 baseline was elaborated by taking advantage of experience from KOMPSAT-1 program. The EGSE of KOMPSAT-2 design concept is generic modular design with preference in part selection with commercial off-the-shelf which were proven from KOMPSAT-1 programs, flexible/user friendly operational environment (graphical interface preferred), minimized new design and self test capability.

• Journal of Life Science
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• v.18 no.12
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• pp.1752-1757
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• 2008

Three marine bacteria producing pigments were isolated from seawater of Jeju-Do and local solar saltern in Korea. Based on phenotypic characteristics and 16S rRNA sequence analysis, the strains were identified as Pseudoalteromonas spp., which produced red (Ju11-1), yellow (Ju14), and orange (TA20) pigments. The pigments showed UV absorption maxima at 537, 378 and 387 nm, respectively. The strains were growing well on Marine broth 2216 culture medium. The productivity of pigments reached the maximum value after 28 hours (Ju11-1, Ju14) and 24 hours (TA20) at $30^{\circ}C$, 2% NaCl and pH 6-7. The best pigment production of strains were supported by 1% of lactose (Ju11-1) and maltose (Ju14, TA20) as a carbon source and 1% of beef extract as a nitrogen source.