• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• 한국분말재료학회지
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• 제18권1호
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• pp.56-63
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• 2011

Recently, $TiO_2$ nanotubes have considerably researched because of their novel application about photocatalysis, dye-sensitized solar cells (DSSCs), lithium ion battery, etc. In this work, self-standing $TiO_2$ nanotube arrays were fabricated by anodic oxidation method using pure Ti foil as a working electrode in ethylene glycole with 0.3M $NH_4F$ + $2%H_2O$. Growth behavior of $TiO_2$ nanotube arrays was compared according to temperature, voltage and time. The morphology, structure and crystalline of anodized $TiO_2$ nanotube arrays were observed by FE-SEM (field emission scanning electron microscope) and XRD (X-ray diffraction).

• 한국분말재료학회지
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• 제25권1호
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• pp.48-53
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• 2018

One-dimensional rutile $TiO_2$ is an important inorganic compound with applicability in sensors, solar cells, and Li-based batteries. However, conventional synthesis methods for $TiO_2$ nanowires are complicated and entail risks of environmental contamination. In this work, we report the growth of $TiO_2$ nanowires on a Ti alloy powder (Ti-6wt%Al-4wt%V, Ti64) using simple thermal oxidation under a limited supply of $O_2$. The optimum condition for $TiO_2$ nanowire synthesis is studied for variables including temperature, time, and pressure. $TiO_2$ nanowires of ${\sim}5{\mu}m$ in length and 100 nm in thickness are richly synthesized under the optimum condition with single-crystalline rutile phases. The formation of $TiO_2$ nanowires is greatly influenced by synthesis temperature and pressure. The synthesized $TiO_2$ nanowires are characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HR-TEM).

• Journal of Ceramic Processing Research
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• 제20권3호
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• pp.222-230
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• 2019

Microwave hydrothermal-assisted sol-gel method was employed to synthesize the Fe doped TiO2 photocatalyst. The morphological analysis suggests anatase phase nanoparticles of ~20 nm with an SBET area of 283.99 ㎡/g. The doping of Fe ions in TiO2 created oxygen vacancies and Ti3+ species as revealed through the XPS analysis. The reduction of the band gap (3.1 to 2.8 eV) is occurred by doping effect. The as-prepared photocatalyst was applied for removal of NOx under solar light irradiation. The doping of Fe in TiO2 facilitates 75 % of NOx oxidation efficiency which is more than two-fold enhancement than the TiO2 photocatalyst. The possible reason of enhancement is associated with high surface area, oxygen vacancy, and reduction of the band gap. Also, the low production of toxic intermediates, NO2 gas, is further confirmed by Combustion Ion Chromatography. The mechanism related NOx oxidation by the doped photocatalyst is explained in this study.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• 에너지공학
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• 제25권2호
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• pp.65-78
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• 2016

광촉매 연구의 초기는 태양에너지의 전환 및 저장에 관련된 분야들로부터 개발되어 왔다. 최근에는 광 또는 광촉매의 존재 하에서 자외선을 조사하여 물의 정제 및 폐수처리와 각종 유기화합물의 분해연구가 활발하게 진행되고 있다. 또한 산화물질-카본나노튜브, 그래핀 나노복합체 등이 광촉매물질로서 연구되고 있다. 이와 같은 복합체는 열적, 화학적으로 안정하기 때문에 플렉서블 소자를 포함한 광분해 태양전지 및 나노전자 소자를 구성하는 재료로서 적당하다.

• 한국재료학회지
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• 제30권12호
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• pp.660-665
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• 2020

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 µs after post-deposition annealing (PDA) at 100 ℃. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 ℃ the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 ℃, and 5:5 for annealing at 300 ℃. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.

• 마이크로전자및패키징학회지
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• 제28권1호
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• pp.13-20
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• 2021

GaN은 III-V족 화합물 반도체로 밴드갭을 조절하는 것이 가능하고 화학적으로 안정하기 때문에 다른 물질에 비해 산성, 염기성 용액에서 부식이 적다. 또한 GaN의 밴드갭이 물의 산화·환원 준위를 포함하고 있어 외부전압 없이 물 분해가 가능하다는 장점이 있다. 하지만 GaN 자체만으로는 태양광-수소 변환 효율(solar-to-hydrogen conversion efficiency, STH)이 낮아 이를 개선하기 위해 최근 활발한 연구가 이루어지고 있다. 본 총설에서는 GaN을 PEC 물분해의 광전극으로 사용하기 위한 방법들과 연구에 대해 정리하였다.

• 한국재료학회지
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• 제32권1호
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• pp.51-55
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• 2022

Generally, Au electrodes are the preferred top metal electrodes in most perovskite solar cells (PSCs) because of their appropriate work function for hole transportation and their resistance to metal-halide formation. However, for the commercialization of PSCs, the development of alternative metal electrodes for Au is essential to decrease their fabrication cost. Ag electrodes are considered one of the most suitable alternatives for Au electrodes because they are relatively cheaper and can provide the necessary stability for oxidation. However, Ag electrodes require an aging-induced recovery process and react with halides from perovskite layers. Herein, we propose a bilayer Au/Ag electrode to overcome the limitations of single Au and Ag metal electrodes. The performance of PSCs based on bilayer electrodes is comparable to that of PSCs with Au electrodes. Furthermore, by using the bilayer electrode, we can eliminate the aging process, normally an essential process for Ag electrodes. This study not only demonstrates an effective method to substitute for expensive Au electrodes but also provides a possibility to overcome the limitations of Ag electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.