• Title/Summary/Keyword: Solar Oxidation

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Fabrication of TiO2 Nanotube Arrays by Anodic Oxidation Method and its Photoelectrochemical Properties (양극산화법에 의한 TiO2 나노튜브 어레이의 제조 및 광전기화학적 특성에 관한 연구)

  • Kim, Seon-Min;Cho, Kwon-Koo;Choe, Yeong-Jin;Kim, Ki-Won;Ryu, Kwang-Sun
    • Journal of Powder Materials
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    • v.17 no.3
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    • pp.216-222
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    • 2010
  • Self-standing $TiO_2$ nanotube arrays were fabricated by potentiostatic anodic oxidation method using pure Ti foil as a working electrode and ethylene glycol solution as electrolytes with small addition of $NH_4F$ and $H_2O$. The influences of anodization temperature and time on the morphology and formation of $TiO_2$ nanotube arrays were investigated. The fabricated $TiO_2$ nanotube arrays were applied as a photoelectrode to dye-sensitized solar cells. Regardless of anodizing temperature and time, the average diameter and wall thickness of $TiO_2$ nanotube show a similar value, whereas the thickness show a different trend with reaction temperature. The thickness of $TiO_2$ nanotube arrays anodized at $20^{\circ}C$ and $30^{\circ}C$ was time-dependent, but on the other hand its at $10^{\circ}C$ are independent of anodization time. The conversion efficiency is low, which is due to a morphology breaking of the $TiO_2$ nanotube arrays in manufacturing process of photoelectrode.

Power variation of Solar cell according to Electrolyte (전해질에 따른 Solar Cell의 출력 변화)

  • Shin, Jun-Oh;Jung, Tae-Hee;Kim, Tae-Bum;Won, Chang-Sub;Ji, Yang-Geun;Kong, Ji-Hyun;Kang, Gi-Hwan;Ahan, Hyung-Keun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.471-472
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    • 2009
  • 최근 태양전지의 내구성과 관련하여 모듈의 노화에 따른 효율 저하 현상이 대두되고 있다. 노화현상원인 중의 하나인 Hot spot 혹은 염분에 의한 백화현상으로 Solar Cell 과 EVA Sheet간 막들뜸 현상이 발생하며 그로 인한 공기 및 수분에 의해 금속 산화가 이뤄진다. 본 연구에서는 특히 전해질의 농도에 따른 금속의 산화와 그 출력에 대해 다룸으로써 태양광 발전 설치 지역 조건에 따른 Module의 내구성을 검토해 보았다. 산성비의 대부분을 구성하고 있는 황산과 질산의 PH를 0.1 간격으로 Split하여 농도의 변화에 의한 금속 부식과 그에 따른 전기적 저항 및 출력변화를 통해 태양광 Module 최적의 설치 지역조건을 제시하였다.

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TWO-STEP THERMOCHEMICAL CYCLES FOR HYDROGEN PRODUCTION WITH DISH TYPE SOLAR THERMAL SYSTEM and $CeO_2/NiFe_2O_4$ (접시형 태양열 집광 시스템과 산화세륨 및 페라이트산화물을 이용한 열화학 사이클의 수소생산)

  • Kwon, Hae-Sung;Oh, Sang-June;Seo, Tae-Beom
    • 한국태양에너지학회:학술대회논문집
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    • 2012.03a
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    • pp.113-119
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    • 2012
  • The two-step water splitting thermochemical cycle is composed of the T-R (Thermal Reduction) and W-D (Water Decomposition) steps. The mechanism of this cycle is oxidation-reduction, which produces hydrogen. The reaction temperature necessary for this thermochemical cycle can be achieved by a dish-type solar thermal collector (Inha University, Korea). The purpose of this study is to validate a water splitting device in the field. The device is studied and fabricated by Kodama et al (2010, 2011). The validation results show that the foam device, when loaded with $CeO_2$ powder, was successfully achieved hydrogen production under field conditions. Through this experiment, we can analyze the characteristics of the catalyst and able to determine which is more advantageous thing to produce hydrogen compared with previous experiment that used ferrite-device.

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TWO-STEP THERMOCHEMICAL CYCLES FOR HYDROGEN PRODUCTION WITH DISH TYPE SOLAR THERMAL SYSTEM (접시형 태양열 집광 시스템을 이용한 열화학 사이클의 수소생산)

  • Kwon, Hae-Sung;Oh, Sang-June;Seo, Tae-Beom
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.169-176
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    • 2011
  • The two-step water splitting thermochemical cycle is composed of the T-R (Thermal Reduction)and W-D (Water Decomposition)steps. The mechanism of this cycle is oxidation-reduction, which produces hydrogen. The reaction temperature necessary for this thermochemical cycle can be achieved by a dish-type solar thermal collector (Inha University, Korea). The purpose of this study is to validate a water splitting device in the field. The device is studied and fabricated by Kodama et al (2010, 2011). The validation results show that the foam device, when loaded with $NiFe_2O_4/m-ZrO_2$powder, was successfully achieved hydrogen production with 9 (10 with a Xe-light solar simulator, 2009, Kodama et al.) repeated cycles under field conditions. Two foam device used in this study were tested for validation before an experiment was performed. The lab scale ferrite-conversion rate was in the range of 24~76%. Two foam devices were designed to for structural stability in this study. In the results of the experiments, the hydrogen percentage of the weight of each foam device was 7.194 and $9.954{\mu}mol\;g^{-1}$ onaverage, and the conversion rates 4.49~29.97 and 2.55~58.83%, respectively.

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Removal of Laser Damage in Electrode Formed by Plating in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거)

  • Jeong, Myeong Sang;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.370-375
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    • 2016
  • In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

Influence of the Optimized Process in Rapid Thermal Processing on Solar Cells (RTP Furnace에서 공정과정이 태양전지에 미치는 영향)

  • Lee, Ji-Youn;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.169-172
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    • 2004
  • The effect of the process parameters on the stable lifetime in rapid thermal firing(RTF) was investigated in order to optimize the process for the Cz-silicon. The process temperature was varied between $700^{\circ}C\;and\;950^{\circ}C$ while the process time was chosen 1 s and 10 s. At below $850^{\circ}C$ the stable lifetime for 10 s is higher than that for 1 s and increases with increasing by the process temperature. However, at over $850^{\circ}C$ the improved stable lifetime is not dependent on the process time and temperature. On the other hand, two high temperature processes in solar cell fabrics are combined with the optimized process and the non-optimized process. The last process determines the stable lifetime. Also, the degraded stable lifetime could be increased by processing in optimized process. The decreased lifetime can increase using the optimized oxidation process, which is a final process in solar cells. Finally, the optimized and non-optimized processes are applied solar cells.

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Improvement of Commercial Silicon Solar Cells with N+-P-N+ Structure using Halogenic Oxide Passivation

  • K. Chakrabarty;D. Mangalaraj;Kim, Kyung-Hae;Park, J.H.;J. Yi
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.17-20
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    • 2003
  • This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

The Influence of Deposition Temperature of ALD n-type Buffer ZnO Layer on Device Characteristics of Electrodeposited Cu2O Thin Film Solar Cells (ALD ZnO 버퍼층 증착 온도가 전착 Cu2O 박막 태양전지 소자 특성에 미치는 영향)

  • Cho, Jae Yu;Tran, Man Hieu;Heo, Jaeyeong
    • Current Photovoltaic Research
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    • v.6 no.1
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    • pp.21-26
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    • 2018
  • Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

Fabrication and Thermal Oxidation of ZnO Nanofibers Prepared via Electrospinning Technique

  • Baek, Jeong-Ha;Park, Ju-Yun;Kang, Ji-Soo;Kim, Don;Koh, Sung-Wi;Kang, Yong-Cheol
    • Bulletin of the Korean Chemical Society
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    • v.33 no.8
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    • pp.2694-2698
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    • 2012
  • Materials on the scale of nanoscale have widely been used as research topics because of their interesting characteristics and aspects they bring into the field. Out of the many metal oxides, zinc oxide (ZnO) was chosen to be fabricated as nanofibers using the electrospinning method for potential uses of solar cells and sensors. After ZnO nanofibers were obtained, calcination temperature effects on the ZnO nanofibers were studied and reported here. The results of scanning electron microscopy (SEM) revealed that the aggregation of the ZnO nanofibers progressed by calcination. X-ray diffraction (XRD) study showed the hcp ZnO structure was enhanced by calcination at 873 and 1173 K. Transmission electron microscopy (TEM) confirmed the crystallinity of the calcined ZnO nanofibers. X-ray photoelectron spectroscopy (XPS) verified the thermal oxidation of Zn species by calcination in the nanofibers. These techniques have helped us deduce the facts that the diameter of ZnO increases as the calcination temperature was raised; the process of calcination affects the crystallinity of ZnO nanofibers, and the thermal oxidation of Zn species was observed as the calcination temperature was raised.

Utilization of the surface damage as gettering sink in the silicon wafers useful for the solar cell fabrication (태양전지용 규소 기판에 존재하는 기계적 손상의 gettering 공정에의 활용)

  • Kim, Dae-Il;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.2
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    • pp.66-70
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    • 2006
  • Various kind of structural defects are observed to be present on the oxidized surface of the silicon crystal which was previously damaged mechanically. The formation of such defects was found to depend on the amount of damage induced and the temperature of thermal oxidation. It was confirmed by the measurement of minority carrier life time that gettering capability decreases as the size of the defects increase. The strained layer which is formed due to smaller amount of damage or lower oxidation temperature believed to has higher capability of gettering over defects like dislocation loops or stacking faults.