• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.488-493
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• 2012

In this study, in order to utilize the seawater as a heat source at Gangneung city near the East Sea in Korea, an annual heating performance of a screw heat pump was simulated. For a simulation, the maximum heating capacity of heat pump was assumed at 3.5 MW. An ambient temperature at Gangneung city was calculated from the TMY2 weather data, while the seawater temperature was calculated from the regression equation based on the measurement by the National Fisheries Research and Development Institute of Korea. The heating load was assumed linearly dependent on the ambient temperature, while the maximum heating load was assumed to appear when the ambient temperature is below $-2.4^{\circ}C$, which is the temperature of TAC 2.5% for heating at Gangneung city. A heat pump performance at full-load was calculated from the regression equation, which involves refrigerant's evaporating and condensing temperatures, based on a commercial screw compressor performance map. A heating supply temperature which determines refrigerant's condensing temperature was assumed linearly dependent on the heating load. A performance degradation due to the part-load operation of heat pump was also considered. Simulation results show that an annual heating coefficient of performance ($COP_H$) of a seawater-source screw heat pump is approximately 2.8 and that it is necessary to improve part-load performance to increase an annual performance of the heat pump.

• Journal of Advanced Navigation Technology
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• v.19 no.1
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• pp.66-73
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• 2015

In this paper, an architecture of a perpetual smart video device and its energy control model for the internet of things (IoT) are proposed. The smart video device consists of a processor, an image sensor, a video codec, and a network controller. In the proposed energy control model, energy consumed by image sensing, video encoding, and transmission and energy harvested by solar panels are defined as an input and an output of a battery, an energy buffer. Frame rate, quantization parameter, and operating frequency of processor are defined as the energy control parameters, and these parameters control the input and the output energy of the energy buffer, finally control the energy left in the battery. The proposed energy control model is validated by the energy consumption measurement of the smart phone based platform for various combinations of energy control parameters, and can be used for the design of perpetual smart video device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.367-367
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• 2014

Transparent conductive oxides (TCOs) 박막은 가시광선영역에서의 높은 투과율과 낮은 저항 특성을 동시에 갖고 있어 최근 smart windows, solar cells, liquid crystal displays (LCD), organic light emitting devices (OLED)등과 같은 최첨단 기기에 필수적인 구성요소로 활발히 사용되고 있다. 따라서, 현재까지 FTO ($SnO_2:F$), ITO ($In_2O_3:Sn$), ATO ($SnO_2:Sb$)등과 같은 다양한 TCO들이 많은 연구자들에 의해 연구되고 있다. 그 중 ITO는 우수한 전기적(${\sim}10^{-4}{\Omega}cm$) 및 광학적(~85%) 특성 때문에 현재 상업적으로 활발히 응용되고 있는 대표적인 물질이다. 하지만 ITO의 주된 구성요소인 indium은 제한적인 매장량과 과도한 소비량 때문에 원가가 비싸다는 문제점이 있다. 반면에, ATO는 우수한 전기적(${\sim}10^{-3}{\Omega}cm$) 및 광학적(~80%) 특성뿐만 아니라 구성물질들의 매장량이 풍부하여 ATO의 원가가 저렴하다는 장점을 가지고 있어 현재 ITO을 대체 할 수 물질로 관심 받고 있다 [1]. 지금까지 우수한 특성을 갖는 ATO박막을 합성하는 방법으로 sol-gel spin coating, sputtering, spray pyrolysis, chemical vapor deposition (CVD)등이 알려져 있다. 이 중에서도, sol-gel spin coating과 spray pyrolysis은 solution기반의 합성법으로 분류되며 합성과정이 간단하고 비용이 저렴하다는 장점이 있고 현재까지 많은 연구가 보고되었다. 그러나, 진공기반이 아닌 우수한 특성을 갖는 solution기반의 ATO박막을 합성하기 위해서는 새로운 합성법의 개발이 학문적으로나 산업적으로도 매우 중요한 이슈이다. 따라서, 본 연구에서는 electrospray을 활용하여 solution기반의 ATO박막을 처음으로 합성하였다. 게다가 ATO박막에 열처리온도에 따른 구조, 화학, 전기, 광학적 특성을 확인하기 위하여 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), transmission electron microscopy (TEM), Hall Effect Measurement System, UV spectrophotometer를 사용하였다. 이러한 실험 결과들을 바탕으로 electrospray을 통해 합성된 solution기반의 ATO박막에 자세한 특성을 본 학회에서 다루도록 하겠다.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.281-281
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• 2010

Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.105-105
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• 2011

ZnO is a promising material since it could be applied to many fields such as solar cells, laser diodes, thin films transistors and gas sensors. ZnO has a wide and direct band gap for about 3.37 eV at room temperature and a high exciton binding energy of 60 meV. In particular, ZnO features high sensitivity to toxic and combustible gas such as CO, NOX, so on. The development of gas sensors to monitor the toxic and combustible gases is imperative due to the concerns for enviromental pollution and the safety requirements for the industry. In this study, we investigated the effect of substrate temperature and post-annealing on structural and electrical properties of ZnO thin films. ZnO thin films were deposited by pulsed laser deposition (PLD) at various temperatures at from room temperature to $600^{\circ}C$. After that, post-annealing were performed at $600^{\circ}C$. To inspect the structural properties of the deposited ZnO thin films, X-ray diffraction (XRD) was carried out. For gas sensors, the morphology of the films is dominant factor since it is deeply related with the film surface area. Therefore, the atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM) were used to observe the surface of the ZnO thin films. Furthermore, we analyzed the electrical properties by using a Hall measurement system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.92-92
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• 2012

Chalcopyrite-type Cu(In,Ga)Se2 (CIGS) is one of the most attractive compound semiconductor materials for thin film solar cells. Among various approaches to prepare the CIGS thin film, the powder process offers an extremely simple and materials-efficient method. Here, we present the mechano-chemical synthesis of CIGS compound powders and their use as an ink material for screen-printing. During the synthesis process, milling time and speed were varied in the range of 10~600 min and 100~300 rpm, respectively. Both phase evolution and powder characteristics were carefully monitored by X-ray diffraction (XRD) method, scanning electron microscope (SEM) observation, and particle size analysis by scanning mobility particle spectrometer (SMPS) and aerodynamic particle sizer (APS). We found the optimal milling condition as 200 rpm for 120 min but also found that a monolithic phase of CIGS powders without severe particle aggregation was difficult to be obtained by the mechano-chemical milling alone. Therefore, the optimized milling condition was combined with an adequate heat-treatment (300oC for 60 min) to provide the monolithic CIGS powder of a single phase with affordable particle characteristics for the preparation of CIGS thin film. The powder was used to prepare an ink for screen printing with which dense CIGS thin films were fabricated under the controlled selenization. The morphology and electrical properties of the thin films were analyzed by SEM images and hall measurement, respectively.

• Journal of Biosystems Engineering
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• v.28 no.1
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• pp.53-58
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• 2003

This study was carried out to design, construct, and test a greenhouse monitoring system fur the environment and status of control devices in a greenhouse from a remote site using internet. The measuring items selected out of many environmental factors were temperature, humidity, solar radiation, CO$_2$, SOx, NOx concentration, EC, pH of nutrient solution, the state of control devices, and the image of greenhouse. The developed greenhouse monitoring system was composed of the network system and the measuring module. The network system consists of the three kinds of monitors named the Croup Monitor. the Client Monitor and the Server Monitor. The results of the study are summarized as follows. 1. The measuring module named the House Monitor. which is used to watch the state of the control device and the environment of the greenhouse, was developed to a embedded monitoring module using one chip microprocessor 2. For all measuring items. the House Monitor showed a satisfactory accuracy within the range of ${\pm}$0.3%FS. The House Monitors were connected to the Croup Monitor by communication method of RS-485 type and could operate under power and communication fault condition within 10 hours. The Croup Monitor was developed to receive and display measurement data received from the House Monitors and to control the greenhouse environmental devices. 3. The images of the plants inside greenhouse were captured by PC camera and sent to the Group Monitor. The greenhouse manager was able to monitor the growth state of plants inside greenhouse without visiting individual greenhouses. 4. Remote monitoring the greenhouse environment and status of control devices was implemented in a client/server environment. The client monitor of the greenhouse manager at a remote site or other greenhouse manager was able to monitor the greenhouse environment and the state of control devices from the Server Monitor using internet.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.213-216
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• 2011

The feasibility study must be conducted for construction of complex for generation of electric power such as items to get permission and grid connection etc. including wind resource to construct a complex for wind power generation. Since wind power can be used by converting only around 20~40% of energy coming in that kinetic energy of wind passes through blades and driving device into electric energy, when constructing a complex, the survey of wind resource takes up the most important part. Data logger used to measure this wind energy are expressed by calculating generally electromotive that is created from a sensor, variable-type, pulse-type signal to be proper for the actual value, and most data loggers have a type without considering geographical features. Besides, in the case of Met mast that is installed to survey the wind resource, since it is installed lower than the hub height of a wind power generator due to permission matters and the economic factors, the height of wind speed by utilizing Deacon equation is compensated to revise this. In this study, a device measuring wind speed was made by using algorithm that is possible to compensate the height of wind speed according to regional features and by applying Deacon equation, and the function of data storage through SD card or RS232 communication was added as well. Besides it's possible to check data more easily with a type of graph by using LCD touch screen for the convenience of users.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.