• Title/Summary/Keyword: Sol-gel spin coating

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A study on the crystalline orientation and electric properties of sol-gel PZT thin film for piezoelectric sensors (졸겔 법으로 제조한 압전 센서용 PZT 박막의 결정 배향 및 전기적 특성 연구)

  • Byun, Jin-Moo;Lee, Ho-Nyun;Lee, Hong-Kee;Lee, Seong-Eui;Lee, Hee-Chul
    • Journal of Sensor Science and Technology
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    • v.19 no.3
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    • pp.202-208
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    • 2010
  • This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

Morphological and Structural Characterization of ZnO Films Deposited by Multiple Sol-Gel Methods (다중 졸-겔 방법에 의해 증착된 ZnO 막의 형태적 및 구조적 특성평가)

  • Muhammad Saqib;Woo Young Kim
    • Journal of the Korean Applied Science and Technology
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    • v.40 no.5
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    • pp.1116-1125
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    • 2023
  • Zinc oxide film is a transparent conductive material and is used in optoelectronic devices in various fields. Therefore, characterization of the zinc oxide film will play a very important role in improving the performance of optoelectronic devices. Here, we will evaluate the morphological and structural characteristics of such a zinc oxide film based on the solution process. Specifically, the sol-gel method will be repeatedly performed to observe the change in material properties of the zinc oxide film according to the number of times of spin-coating. It was confirmed that crystallization proceeded as a result of performing the sol-gel method repetitively 5 times under constant solution conditions. At 7 times or more, the element composition and crystallinity tended to converge to a specific value. The average crystal size of the final zinc oxide film was calculated to be about 10.7 nm. In this study, the number of processes showing optimal crystallization was 7 times. The results and methodology of this study can be applied while varying various solution process variables and are expected to contribute to establishing optimal process conditions.

Fabrication of Tehermochromic Thin Films by the Sol-Gel Method (Sol-Gel법에 의한 Thermochromic 박막 제조)

  • 장원식;김석범;강승구;조동수
    • Journal of the Korean Ceramic Society
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    • v.35 no.1
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    • pp.11-16
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    • 1998
  • $VO_2$ thin films have been prepared on borosilicate glass substrate using alkoxide method to characterize the effects of fabricating factors on thermochromic performance. The gel films formed by spin coating were converted to $V_2O_5$ phase during oxidizing heat-tratment and the $VO_2$ phase were formed by reducing heat-treatement. The thermochromic switching properties of $VO_2$ thin films are strongly affected by the crystal phase and microstructure and those could be controlled by reducing heat-treatment conditions. The ther-mochromic switching characteristics of $VO_2$ thin films synthesized were measured at IR (2.5$\mu\textrm{m}$) as the transition temperature of $63^{\circ}C$ the transition width of $3.6^{\circ}C$and the maximum and minimum transmittance of 84% and 14% respectively.

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Preparation of Water-Repellent Coating Solutions from Tetraethoxysilane and Methyltriethoxysilane by Sol-Gel Method (졸-겔법에 의해 Tetraethoxysilane과 Methyltrimethoxysilane으로부터 발수코팅제 제조)

  • Kim, Dong Gu;Lee, Byung Wha;Song, Ki Chang
    • Korean Chemical Engineering Research
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    • v.56 no.3
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    • pp.327-334
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    • 2018
  • Water-repellent coating solutions were prepared by sol-gel method using tetraethoxysilane (TEOS) and methyltrimethoxysilane (MTMS) as precursors. The solutions were spin-coated on a cold-rolled steel sheet and thermally cured to prepare a non-fluorine water-repellent coating films. The effects of molar ratios of MTMS/TEOS, water concentration and ammonia concentration on the hydrophobic properties of the coating films were studied. The contact angle of water on coating films prepared by varying the molar ratio of MTMS/TEOS to 1~20 showed a maximum value of $108^{\circ}$ when the MTMS/TEOS molar ratio was 10. With increasing water content, the coating films showed the larger contact angles and the better the water repellency. As the amount of ammonia added was increased, the contact angles of coating films were increased, showing the better the water repellency. It is considered that the larger the amount of ammonia added, the larger the size of the silica particles generated, which increases the surface roughness of the silica particles, thereby increasing the water repellency.

Characteristics of SBN Thin Films Prepared by Sol-Gel Process (졸겔법으로 제조된 SBN박막의 특성연구)

  • 이동근;김태중;이해욱;이희영;김정주;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1030-1035
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    • 2001
  • Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

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Sol-gel processed oxide semiconductor thin-film transistors for active-matrix displays (Sol-gel 공정으로 제작된 산화물 반도체 박막 트랜지스터)

  • Kim, Yong-Hoon;Park, Sung-Kyu;Oh, Min-Seok;Han, Jeong-In
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1342_1342
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    • 2009
  • Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

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