• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.588-594
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• 1997

Gelation time, gel structure and volatility of by-products during gelation of PZT sol-gel processing were investigated by FT-IR spectroscopy. FT-IR spectroscopic study was performed on PZT gels with the various H₂O contents (1, 2 and 3 mol) and the several types (HNO₃, NH₄OH) and amounts (0.1, 0.2 mol) of catalysts, monitoring temporal (0, 1, 3, 10 weeks, 3 months and 3 years) and thermal (100-700 ℃) changes of FT-IR spectra. The interpretation of temporal change of the spectra revealed two trends. One is under the condition of 1 mol H₂O, 1 mol H₂O+0.1 mol HNO₃, 3 mol H₂O and the other is for 1 mol H₂O+0.1 mol NH₄OH, 2 mol H₂O, 1 mol H₂O+0.2 mol HNO₃. The gel structures and the gelation times for these conditions were discussed in comparison with the reported results of SiO₂, and we suggested the reaction mechanisms for these structural characteristics. Thermal variation of FT-IR spectra was interpreted as the evolution processes of gel by investigating the evaporation of solvent and the decomposition of organic residues.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.301-307
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• 1997

Monodisperse, spherical $SiO_2/TiO_2$ composite fine powders were prepared by modified Sol-Gel process which $TiO_2$ fine Powders was used as a seed particles for condensation of TEOS (Tetraethyl Orthosilicate). The reaction was carried out under $N_2$ atmosphere at ambient temperature using $NH_3$ as a catalyst. Ethanol was used as a solvent. Drying process was carried out with vacuum trap which cooled by liquid $N_2$. The reaction variables were the concentration of TEOS, the concentration of ammonia, the size of $TiO_2$ seed and molar ratio of $SiO_2/TiO_2$. The optimum condition for the preparation of $SiO_2/TiO_2$ composite fine powders without agglomeration was [TEOS]=0.3M, [$NH_3$]=0.7M, size of $SiO_2/TiO_2$ seed = 200~300nm.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.705-711
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• 1991

Alumina precursor sol was obtained by the reaction of Al(OC4H9)3 and acetylacetone in the solvent followed by the partial hydrolysis. This sol was measured by viscosity and the effect of pH. The powders obtained from this sol were calcined at the various temperatures. The transition of crystals and crystal state were investigated at the various temperatures. The powders dried at 90$^{\circ}C$ showed amorphous and ${\gamma}$-Al2O3 at 900$^{\circ}C$, ${\alpha}$-Al2O3 mono-phase at 1050$^{\circ}C$ respectively. As a result of Al27-MASNMR analysis, amorphous and ${\alpha}$-Al2O3 powders showed 6-coordinated Al, ${\gamma}$-Al2O3 4-coordinated Al respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.123-123
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• 2001

• Proceedings of the Membrane Society of Korea Conference
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• 2005.05a
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• pp.88-92
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.130.2-130
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• 2002

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.839-847
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.212-213
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• 2002

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.