• 제목/요약/키워드: Sol-gel film

검색결과 743건 처리시간 0.028초

콜로이드 실리카 종류와 산도영향에 따른 졸겔코팅제 특성연구 (Properties of Sol-Gel Materials Synthesized According to Kinds of Colloidal Silica and Acidity)

  • 강동필;안명상;나문경;명인혜;강영택
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.1927-1929
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    • 2005
  • Colloidal Silica(CS)/methyltrimethoxy silane(MTMS) sol solutions were prepared in variation with synthesizing parameters such as kinds of CS, acidity and reaction time. In order to understand its surface properties, sol-gel coating films on glass were fabricated. The coating film obtained from CS/MTMS sol had stable contact angle and more enhanced flat surface at reaction time of 24 hours. In case of the initial and final period of reaction, the coating films had unstable contact angle and more rough surface. In addition, surface of CS/MTMS sol-gel coating film was more rougher with increasing of acidity.

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질소분위기 전자빔 조사에 의한 졸-겔 IGZO 박막 트랜지스터의 전기적 특성 향상 (Enhancing Electrical Properties of Sol-Gel Processed IGZO Thin-Film Transistors through Nitrogen Atmosphere Electron Beam Irradiation)

  • 박지호;송영석;배수강;김태욱
    • 마이크로전자및패키징학회지
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    • 제30권3호
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    • pp.56-63
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    • 2023
  • 본 연구에서는 졸-겔 IGZO(Indium-Gallium-Zinc Oxide) 박막을 만들고 이에 전자빔을 조사 한 후 박막 트랜지스터로 제작하여 전자빔 조사가 박막 트랜지스터의 전기적 특성에 미치는 영향을 비교 분석하였다. 특히 전자빔이 조사되는 환경을 대기 중과 질소 분위기(<200 ppm O2)로 두고 전자빔 조사 선량 세기를 100kGy와 200kGy로 각각 조사한 후 350℃ 온도에서의 열처리만 진행한 비교군과 비교 분석을 진행하였다. 전자빔 조사에 따른 졸-겔 IGZO 박막의 물성 변화를 분석하기 위해 UV-Visible spectroscopy, X-ray diffraction(XRD)와 X-ray photoelectron spectroscopy(XPS)를 분석 결과, 전자빔 조사 전·후의 모든 조건 하에서 가시광 영역에서의 80% 이상의 높은 투과도를 보여줌을 확인할 수 있었고, XRD 분석 결과를 통해 전자빔 조사와 관계없이 비정질 특성을 유지함을 확인하였다. 특히 전자빔 조사에 따라 졸-겔 IGZO 박막에 화학적 조성 변화가 있음을 확인하였는데, 질소 분위기에서 전자빔을 조사하게 되면 M-O결합과 관련된 peak이 차지하는 비율이 높아짐을 확인할 수 있었다. 질소 분위기에서 전자빔이 조사된 TFT들은 on/off 비율, 전자 이동도에서 향상된 특성을 보여주었으며, 시간에 따라 트랜지스터의 특성들(on/off 비율, 문턱전압, 전자이동도, 하위임계값 스윙)의 수치 또한 큰 변화 없이 유지됨이 확인되어, 졸-겔 공정 TFT 제작에 있어서 질소 분위기에서의 전자빔 조사공정이 IGZO기반 박막 트랜지스터의 전기적특성의 개선에 기여할 수 있을 것으로 기대된다.

태양전지 효율 향상용 졸-겔 법에 의한 반사방지 코팅막의 제조 (Preparation of the Anti-Reflective(AR) Coating Film by Sol-Gel Method to Improve the Efficiency of Solar Cell)

  • 김효섭;김영호;최재윤
    • 한국수소및신에너지학회논문집
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    • 제25권2호
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    • pp.145-150
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    • 2014
  • This study investigates the preparation of anti-reflective (AR) coating film to improve the efficiency of solar cell. The AR coating film was successfully obtained by dip-coating with AR coatings prepared by sol-gel method. Fluoroalkylsilane was additionally introduced into the coatings to give the self-cleaning effect of AR coating film. We performed the abrasion test, pencil scratch hardness test and cross-cut test to identify the mechanical strength of AR coating film. As the results, the transmittance of AR coating films with 9.07, 18.13 and 27.20 of IPA/MTMS molar ratios were 93.1, 93.6 and 95.3%, respectively. The water contact angle and transmittance of AR coating film increased by the introduction of hydrophobicity. The prepared AR coating film shows the high level of abrasion, hardness and adhesion. The IPA/MTMS molar ratio of 27.20 and the withdrawing speed range of 0.20 ~ 0.28cm/sec are the optimal coating condition in terms of the transmittance and mechanical strength of AR coating film.

Sol-Gel법으로 제작한 PZT(30/70)/PZT(70/30) 이종층 박막의 구조 및 유전특성 (Structural and Dielectrical Properties of PZT(30/70)/PZT(70/30) Heterolayered Thin Film Prepared by Sol-Gel Method)

  • 김경균;정장호;이성갑;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권7호
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    • pp.514-520
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    • 1999
  • Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

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Sol-Gel법에 의한 $TiO_2-SiO_2$계 저반사 박막의 제조 및 특성 (Preparation and Characterization of Antireflective Film in $TiO_2-SiO_2$ System by Sol-Gel Method)

  • 윤태일;최세영;이용근;이재호
    • 한국세라믹학회지
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    • 제30권9호
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    • pp.775-783
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    • 1993
  • TiO2-SiO2 system anti-reflective(AR) film was prepared to decrease reflectance on the glass surface. The experiments were carried out as fellow, 1) preparation & hydrolysis of TiO2-SiO2 system sols. 2) glass dipping, and 3) drying & heat treatment. We investigated the refractive index and thickness of film with viscosity, zeta-potential of sol, sol concentration, withdrawal speed, drying and heat treatment condition. As a result, we prepared good qualitative Quarter-Half-Quarter type anti-reflective film that had minimum, 0.02% and average reflectance, 0.087% in the visible region.

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Synthesis of direct-patternable ZnO film incorporating Pt Nanoparticles

  • Choi, Yong-June;Park, Hyeong-Ho;Reddy, A.Sivasankar;Park, Hyung-Ho
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.369-369
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    • 2007
  • ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

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실리카-타이타니아 하이브리드 코팅막의 제조 및 특성평가 (Fabrication and characterization of silica-titania hybrid film using silane treated $TiO_2$ sol)

  • 한동희;강동준;김석준;강동필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.553-554
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    • 2007
  • By sol-gel method, we have fabricated silica-titania hybrid film using silane treated colloidal $TiO_2$ and characterized the film through FT-IR, TGA, UV-VIS and AFM. The silica-titania hybrid film showed Ti-O-Si chemical bond at FT-IR peak of $910{\sim}940cm^{-1}$. The fabricated hybrid film showed thermal stability of around $350^{\circ}C$(5wt% loss temperature) and transparency more than 90%. In addition, the good surface smoothness was confirmed by AFM. Therefore, the silica-titania hybrid film with outstanding properties can be potential for application in electronics and displays.

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Sol-gel법에 의한 단층 반사 방지막 제조 (Fabrication of Single Layer Anti-reflection Thin Film by Sol-gel Method)

  • 박종국;전대우;이미재;임태영;황종희;배동식;김진호
    • 한국전기전자재료학회논문지
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    • 제28권12호
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    • pp.821-825
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    • 2015
  • Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

Sol-Gel Processed InGaZnO Oxide Semiconductor Thin-Film Transistors for Printed Active-Matrix Displays

  • Kim, Yong-Hoon;Park, Sung-Kyu;Oh, Min-Suk;Kim, Kwang-Ho;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1002-1004
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    • 2009
  • Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

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Preparation and Characterization of Sol-Gel Derived $SiO_2-TiO_2$ -PDMS Composite Films

  • 황진명;여창선;김유항
    • Bulletin of the Korean Chemical Society
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    • 제22권12호
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    • pp.1366-1370
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    • 2001
  • Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.