• 제목/요약/키워드: Sol-gel film

검색결과 743건 처리시간 0.03초

Sol-Gel 법에 의한 압전 PZT 후막의 제조 (Fabrication of Piezoelectric PZT Thick Film by Sol-gel Process)

  • 박종환;방국수;박찬
    • 한국해양공학회지
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    • 제29권1호
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    • pp.94-99
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    • 2015
  • Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

Sol-Gel법으로 제조된 Ta2O5 박막의 유전특성과 누설전류 특성 (Dielectric Properties and Leakage Current Characteristics of Ta2O5 Thin Film Prepared by Sol-Gel Process)

  • 오태성;이창봉;이병찬;오영제;김윤호
    • 한국세라믹학회지
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    • 제29권1호
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    • pp.29-34
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    • 1992
  • Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

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솔-젤법을 이용한 aminoalkoxysilane 산소차단필름의 제조 (The Preparation of Sol-Gel Derived Aminoalkoxysilane Films and its Application for Oxygen Barrier)

  • 김현준
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.17-21
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    • 2006
  • The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using aminoalkoxysilanes. The coating layers were characterized by FT-IR and SEM. The oxygen permeability coefficients of coating films were measured by variable volume method, and then the influences of solvent ratio in sol and film drying temperature on the oxygen barrier properties were investigated. The aminoalkoxysilane coating films exhibited much higher oxygen barrier properties than PET film. The oxygen permeability coefficient of the film coated with each of APTEOS and APTMOS was measured to be $2.96{\times}10^{-6}$ and $3.05{\times}10^{-5}\;GPU$, respectively, while that of PET film was $1.16{\times}10^{-4}\;GPU$.

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Sol-Gel 법을 이용한 ITO박막의 제조 (Fabrication of ITO Thin Film by Sol-Gel Method)

  • 김지홍;이재호;김영환
    • 전기화학회지
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    • 제3권1호
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    • pp.11-14
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    • 2000
  • 가시광선 영역에서의 높은 투과성과 우수한 전도성을 가진 전도성 ITO박막은 그 전기적 광학적 특성에 의해서 태양 전기 기판의 전극 재료나 Display소자의 투명전극으로 개발되고 있다. 이들의 제작은 현재 sputtering이 주종을 이루나 이들의 높은 생산비를 절감할 목적으로 sol-ge떫을 이용하여 ITO박막을 만들었다. ITO제조용 sol은 유기질 sol로는 indium tri-iso-propoxide를 ethylene glycol monoethyl ether에 녹인 후 $SnCl_4$를 dopant로 사용하여 제조하였다. Acetyl acetone을 넣어 sol이 수화되는 현상을 억제하였다. 무기질 sol로는 indium acetate를 n-propanol에 용해하여 사용하였다. Spin 방법을 이용하여 코팅하였으며 $500^{\circ}C$에서 열처리하였다. 가시 광선 영역에서의 투과도는 $90\%$ 이상을 얻었으며 비저항은 $0.01\Omega{\cdot}cm$가 측정되었다.

졸-겔 필름을 이용한 반사형 광섬유 pH 센서의 개발 (Development of Reflection-type Fiber-optic pH Sensor Using Sol-gel Film)

  • 유욱재;서정기;장경원;문진수;한기택;박장연;이봉수;조승현;허지연;박병기
    • 센서학회지
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    • 제20권4호
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    • pp.266-271
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    • 2011
  • A reflection-type fiber-optic pH sensor, which is composed of a pH sol-gel film, plastic optical fibers, a mirror, a light source and a spectrometer, is developed in this study. As pH indicators, a bromthymol blue, a cresol red and a thymol blue are used, and they are immobilized in the sol-gel films. The emitted light from a light source is guided by a fiber-optic Y-coupler and plastic optical fibers to the pH sol-gel film in a pH sensing probe. The pH change in the sensing probe gives rise to a change in the color of the pH sol-gel film, and the optical characteristic of reflected light through the pH sol-gel film is also changed. Therefore, we have measured the spectra of reflected lights, which are changed according to the color variations of the pH sol-gel films with different pH values, by using of a spectrometer. Also, the relationships between the pH values and the intensities of reflected lights are obtained on the basis of the color variations of the pH sol-gel films.

Development of fabrication process of Planar Light-wave Circuit (PLC) : Optimization of the fabrication process of planar light-wave circuit by Hybrid Sol-Gel methods

  • Jang, Won-Gun;Kim, Chung-Ryeol;Kim, Jae-Pil;Park, Young-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.484-485
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    • 2003
  • We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

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졸-겔법에 의한 이트리안 안정화 지프코니아박막의 결정화 (Crystallization of Yttria-Stabilized-Zirconia Film by Sol-Gel Process)

  • 서원찬;조차제;윤영섭;황운석
    • 한국표면공학회지
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    • 제30권3호
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    • pp.183-190
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    • 1997
  • Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

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Sol-Gel법을 통한 리튬 기반 전해질에 적합한 니켈 산화물 박막의 제조와 리튬 기반 전해질에서의 전기변색 특성 (Fabrication of Nickel Oxide Thin Film for Lithium Based Electrolyte by Sol-Gel Method and Electrochromic Properties in Lithium Based Electrolyte)

  • 박선하;유성종;임주완;윤성욱;차인영;성영은
    • 전기화학회지
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    • 제12권3호
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    • pp.251-257
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    • 2009
  • In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

Sol-gel법을 이용한 PLZT박막 커패시터의 전기적 특성 (Electrical properties of the PLZT thin film capacitors by the sol-gel method)

  • 박준열;정장호;이성갑;이영희
    • E2M - 전기 전자와 첨단 소재
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    • 제9권7호
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    • pp.668-673
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    • 1996
  • In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

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