• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.80-81
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.178-178
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• 2003

II-Ⅵ족 반도체 중에서 넓은 밴드갭을 가지는 ZnO에 Mn 이온을 doping할 경우 Tc가 상온보다 높을 것이라는 이론적 계산이 2000년 Science에 발표되었다. 이후 ZnO에 전이금속 이온을 doping하여 상온에서도 강자성을 나타내는 자성 반도체 (DMS)를 만들기 위한 연구가 활발히 진행되고 있다. Co-doped ZnO 박막은 PLD로 증착하였을 경우 Tc가 상온보다 높으나 재현성이 낮은 것으로 알려져 있었다. 그러나 최근 sol-gel 방법을 이용하여 Co-doped ZnO 박막을 제조하면 강자기 특성의 재현성을 높일 수 있다는 결과가 보고되었다. 이에 본 연구에서는 sol-gel 방법을 사용하여 여러 조성의 Co-doped ZnO 박막을 합성한 후 이들의 자성 특성을 검토하였다. 이러한 결과를 바탕으로 Co-doped ZnO 박막에서 강자성 발현의 근원을 규명하고자 (ⅰ) 조성에 따른 Co-doped ZnO의 Raman peak과 EXAFS peak의 변화를 측정하여 구조적 특성과 ZnO 내에서의 Co 이온의 상태를 분석하였으며, (ⅱ) Hall 효과 실험으로 carrier density를 측정함으로써 Fermi 준위에서의 파수 벡터의 크기를 산출하고자 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.169-174
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• 2010

A micro gas sensor for formaldehyde (HCHO) gas was fabricated by using MEMS (Micro Electro Mechanical System) technology and the sol-gel process. The sensing materials of the $SnO_2$-ZnO system were synthesized by the sol-gel method. The crystal structure and thermal analysis of the $SnO_{2}$-ZnO were characterized by XRD and DSC-TGA. The fabricated gas sensors were tested at various gas concentrations (0.5~5.0 ppm) and different operation temperatures ($350{\sim}550^{\circ}C$). The $SnO_2$-10 mol%ZnO sensor showed the highest sensitivity ($R_s=0.24$) for 1.0 ppm-formaldehyde at $500^{\circ}C$ and response time (90% saturation time) was within 20 seconds.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.174-177
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• 2018

ZnO/Ag/ZnO multilayers were fabricated and their optical properties were investigated in terms of the micro-cavity effect in electroluminescent devices based on colloidal quantum dots. The top and bottom ZnO layers were formed by a sol-gel method while the middle Ag layer was deposited by thermal evaporation. After the fabrication of the ZnO/Ag/ZnO structure, the transmittance increased to 74%. When the oxide/metal/oxide multilayers were applied to quantum dot light-emitting diodes, the color purity was enhanced due to the narrower full width at half maximum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.187-192
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• 2004

We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.98.2-98.2
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• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.15-18
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• 2012

Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] and indium acetate [In$(CH_3COO)_3$] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to $1000^{\circ}C$, the thin film crystallizes into polycrystalline $In_2O_3$(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of $700^{\circ}C$ as $2{\Omega}{\cdot}cm$. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.8-12
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• 2006

We have fabricated ZnO thin film on $Pt/TiO-2/SiO_2/Si$ substrate by the sol-gel method and have investigated the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films. The ZnO thin film annealed at $600^{\circ}C$ exhibits the highest c-axis orientation and its FWHM of X-ray peak is $0.4360^{\circ}C$. In the results of surface morphology investigation of ZnO thin film by using Am it is observed that ZnO thin film annealed at $600^{\circ}C$ exhibits the largest UV (ultraviolet) exciton emission at around 378nm and the smallest visible emission at around 510nm among these of ZnO thin films annealed at various temperatures. It is deduced that the ZnO thim film annealed at $600^{\circ}C$ is formed most stoichiometrically since the visible emission at around 510nm comes from oxygen vacancy or impurities.

• Journal of Magnetics
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• v.20 no.3
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• pp.246-251
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• 2015

This study was aimed to study the effect of Zn content on the hyperfine parameters and the structural variation of $Ni_{1-x}Zn_xFe_2O_4$ for x = 0, 0.2, 0.4, 0.6, and 0.8. To achieve this, a sol-gel route was used for the preparation of samples and the obtained ferrites were investigated by X-ray diffraction, scanning electron microscopy, and $M{\ddot{o}}ssbauer$ spectroscopy. The formation of spinel phase without any impurity peak was identified by X-ray diffraction of all the samples. Moreover, the estimated crystallite size by X-ray line broadening indicates a decrease with increasing Zn content. This result was in agreement with the scanning electron microscopy result, indicating the reduction in grain growth with further zinc substitution. The room-temperature $M{\ddot{o}}ssbauer$ spectra show that the hyperfine fields at both the A and B sites decreased with increasing Zn content; however, the rate of reduction is not the same for different sites. Moreover, the best fit parameter showed that the quadrupole splitting values of B site increased from the pure nickel ferrite to the sample with x = 0.8.