• 제목/요약/키워드: Sol-gel ZnO

검색결과 205건 처리시간 0.027초

Dielectric and Magnetic Properties of Co-doped Ni0.65Zn0.35Fe2O4 Thin Films Prepared by Using a Sol-gel Method

  • Lee, Hyun-Sook;Lee, Jae-Gwang;Baek, K.S.;Oak, H.N.
    • Journal of Magnetics
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    • 제8권4호
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    • pp.138-141
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    • 2003
  • $Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

The Effect of SiO2 Shell on the Suppression of Photocatalytic Activity of TiO2 and ZnO Nanoparticles

  • Lee, Min Hee;Patil, Umakant Mahadev;Kochuveedu, Saji Thomas;Lee, Choon Soo;Kim, Dong Ha
    • Bulletin of the Korean Chemical Society
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    • 제33권11호
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    • pp.3767-3771
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    • 2012
  • In this study, we investigate the potential use of $TiO_2@SiO_2$ and $ZnO@SiO_2$ core/shell nanoparticles (NPs) as effective UV shielding agent. In the typical synthesis, $SiO_2$ was coated over different types of $TiO_2$ (anatase and rutile) and ZnO by sol-gel method. The synthesized $TiO_2@SiO_2$ and $ZnO@SiO_2$ NPs were characterized by UV-Vis, XRD, SEM and TEM. The UV-vis absorbance and transmittance spectra of core@shell NPs showed an efficient blocking effect in the UV region and more than 90% transmittance in the visible region. XRD and SAED studies confirmed the formation of amorphous $SiO_2$ coated over the $TiO_2$ and ZnO NPs. The FESEM and TEM images shows that coating of $SiO_2$ over the surface of anatase, rutile $TiO_2$ and ZnO NPs resulted in the increase in particle size by ~30 nm. In order to study the UV light shielding capability of the samples, photocatalytic degradation of methylene blue dye on $TiO_2@SiO_2$ and $ZnO@SiO_2$ NPs was performed. Photocatalytic activity for both types of $TiO_2$ NPs was partially suppressed. In comparison, the photocatalytic activity of ZnO almost vanished after the $SiO_2$ coating.

졸-겔법으로 성장시킨 Mg0.05Zn0.95O 박막의 Indium 전구체의 종류에 따른 물성에 관한 연구 (Physical Properties of Mg0.05Zn0.95O Thin Films Grown by Sol-Gel Method According to Types of Indium Precursors)

  • 최효진;이민상;김홍승;안형수;장낙원
    • 한국전기전자재료학회논문지
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    • 제34권4호
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    • pp.256-261
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    • 2021
  • Indium-doped Mg0.05Zn0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg0.05Zn0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

Structural and Optical Properties of Sol-gel Derived ZnO:Cu Films

  • 배지환;박준수;조신호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.199-199
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    • 2013
  • 최근 단파장 광전 소자와 고출력 고주파 전자 소자에 대한 수요 때문에 넓은 밴드갭 에너지를 갖는 반도체에 관심이 많다. 이중에서, ZnO는 우수한 화학 및 역학적 안정성, 수소 플라즈마 내구성과 저가 제조의 장점 때문에 광전자 소자 개발 분야에 적합한 산화물 투명 전극으로 관심을 끌고 있다. 불순물이 도핑되지 않은 ZnO는 본질적으로 산소 빈자리 (vacancy)와 아연 격자틈새 (interstitial)와 같은 자체의 결함으로 말미암아 n형의 극성을 갖기 때문에, 반도체 소자로 응용하기 위해서는 도핑 운반자의 농도와 전도성을 제어하는 것이 필요하다. 본 연구에서는 박막 제조시 제어성, 안정성과 용이하게 성장이 가능한 졸겔 (sol-gel) 방법을 사용하여 사파이어와 석영 기판 위에 Cu가 도핑된 ZnO 박막을 성장시켰으며, 그것의 구조, 표면 형상, 평균 투과율, 광학 밴드갭 에너지를 계산하였다. 특히, Cu의 몰 비를 0, 0.01, 0.03, 0.05, 0.07, 0.1 mol로 변화시키면서 ZnO:Cu 박막을 성장시켰다. ZnO:Cu 졸은 zinc acetate dihydrate, 2-methoxyethanol (용매), momoethanolamine (MEA, 안정제)을 사용하여 제조하였다. 상온에서 2-methoxyethanol과 MEA가 혼합된 용액에 zinc acetate dihydrate (Zn)을 용해시켰다. 이때 MEA와 Zn의 몰 비는 1로 유지하였다. 이 용액을 $60^{\circ}C$ 가열판 (hot plate)에서 24 h 동안 자석으로 휘젓으며 혼합하여 맑고 균일한 용액을 얻었다. 이 용액을 3000 rpm 속도로 회전하는 스핀 코터기의 상부에 장착된 사파이어와 석영 기판 위에 주사기 (syringe)를 사용하여 한 방울 떨어뜨려 30 s 동안 스핀한 다음에, 용매를 증발시키고 유기물 찌꺼기를 제거하기 위하여 $300^{\circ}C$에서 10분 동안 건조시킨다. 기판 위에 코팅하는 작업에서 부터 건조 작업까지를 10회 반복한 다음에, 1 h 동안 전기로에 장입하여 석영 기판 위에 증착된 시료는 $550^{\circ}C$에서, 사파이어 기판은 $700^{\circ}C$에서 열처리를 수행하였다. Cu의 몰 비 0, 0.01, 0.03, 0.05, 0.07, 1로 성장된 ZnO:Cu 박막에 대한 x선 회절 분석의 결과에 의하면, 모든 ZnO:Cu 박막의 경우에 관측된 34.3o의 피크는 ZnO (002) 면에서 발생된 회절 패턴을 나타낸다. 이것은 JCPDS #80-0075에 제시된 회절상과 일치하였으며, ZnO:Cu 박막이 기판에 수직인 c-축을 따라 우선 배향됨을 나타낸다. 사파이어 기판 위에 증착된 박막의 경우에, Cu의 몰 비가 점점 증가함에 따라(002)면 회절 피크의 세기는 전반적으로 증가하여 0.07 mol에서 최대를 나타내었으나, 석영 기판 위에 증착된 박막의 경우에는 0.05 mol에서 최대를 보였다. 외선-가시광 분광계를 사용하여 서로 다른 Cu의 몰 비로 성장된 ZnO:Cu 박막에서 광학 흡수율 (absorbance) 스펙트럼을 측정하였으며, 이 데이터를 사용하여 평균 투과율을 계산한 결과, 투과율은 Cu의 몰 비에 따라 현저한 차이를 나타내었다. Cu의 몰 비가 0.07 mol일 때 평균 투과율은 80%로 가장 높았으며, 0.03 mol에서는 30%로 최소이었다. 광학밴드갭 에너지는 Tauc 모델을 사용하여 계산하였고, 결정 입자의 형상과 크기와의 상관 관계를 조사하였다.

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Crystallographic and Magnetic Properties of Co, Zn, Ni-Zn Substituted Nano-size Manganese Ferrites Synthesized by Sol-gel Method

  • Noh, Kwang Mo;Lee, Young Bae;Kwon, Woo Hyun;Kang, Jeoung Yun;Choi, Won-Ok;Chae, Kwang Pyo
    • Journal of Magnetics
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    • 제21권3호
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    • pp.308-314
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    • 2016
  • Cobalt-, zinc-, and nickel-zinc-substituted nano-size manganese ferrite powders, $MnFe_2O_4$, $Mn_{0.8}Co_{0.2}Fe_2O_4$, $Mn_{0.8}Zn_{0.2}Fe_2O_4$ and $Mn_{0.8}Ni_{0.1}Zn_{0.1}Fe_2O_4$, were fabricated using a sol-gel method, and their crystallographic and magnetic properties were subsequently studied. The $MnFe_2O_4$ ferrite powder annealed at temperatures above 523 K exhibited a spinel structure, and the particle size increased as the annealing temperature increased. All ferrites annealed at 773 K showed a single spinel structure, and the lattice constants and particle size decreased with the substitution of Co, Zn, and Ni-Zn. The $M{\ddot{o}}ssbauer$ spectrum of the $MnFe_2O_4$ ferrite powder annealed at 523 K only showed a doublet due to its superparamagnetic phase, and the $M{\ddot{o}}ssbauer$ spectra of the $MnFe_2O_4$, $Mn_{0.8}Co_{0.2}Fe_2O_4$, and $Mn_{0.8}Zn_{0.2}Fe_2O_4$ ferrite powders annealed at 773 K could be fitted as the superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. However, the $M{\ddot{o}}ssbauer$ spectrum of the $Mn_{0.8}Ni_{0.1}Zn_{0.1}Fe_2O_4$ ferrite powder annealed at 773 K consisted of two Zeeman sextets and one quadrupole doublet due to its ferrimagnetic and paramagnetic behavior. The area ratio of the $M{\ddot{o}}ssbauer$ spectra could be used to determine the cation distribution equation, and we also explained the variation in the $M{\ddot{o}}ssbauer$ parameters by using this cation distribution equation, the superexchange interaction and the particle size. Relative to pure $MnFe_2O_4$, the saturation magnetizations and coercivities were larger in $Mn_{0.8}Co_{0.2}Fe_2O_4$ and smaller in $Mn_{0.8}Zn_{0.2}Fe_2O_4$, and $Mn_{0.8}Ni_{0.1}Zn_{0.1}Fe_2O_4$. These variations could be explained using the site distribution equations, particle sizes and magnetic moments of the substituted ions.

전사 공정을 이용한 산화막 정렬 패턴 제작과 액정 배향 특성 연구 (Parallel pattern fabrication on metal oxide film using transferring process for liquid crystal alignment)

  • 오병윤
    • 전기전자학회논문지
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    • 제23권2호
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    • pp.594-598
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    • 2019
  • HfZnO 박막 위 패턴 전사 기법을 이용하여 기존의 러빙법을 대체하는 배향 공정에 대하여 연구하였다. 정렬 패턴은 레이저 간섭 리소그래피를 이용하여 실리콘 웨이퍼 위에 제작하였다. 졸겔 공정을 이용하여 HfZnO 용액을 제작하였고, 유리기판 위에 스핀코팅하였다. 미리 제작한 정렬패턴을 스핀코팅된 HfZnO 위에 올려놓고, $100^{\circ}C$에서 30분간 소성하였다. HfZnO 박막에 평행한 그루브가 형성되었음을 atomic force microscopy 와 scanning electron microscopy로부터 확인할 수 있었다. HfZnO 박막을 이용하여 액정 셀을 제작하였으며, POM 분석으로부터 액정이 균일하게 정렬되었음을 확인할 수 있었다. 액정은 $0.25^{\circ}$의 프리틸트 각을 가졌으며, 수평배향 특성을 보여주었다. 액정 분자는 평행한 그루브에 의한 HfZnO 박막 표면 이방성에 의하여 균일하게 정렬되었음을 확인할 수 있었다.

Effect of Film Thickness on Structural, Electrical, and Optical Properties of Sol-Gel Deposited Layer-by-layer ZnO Nanoparticles

  • Shariffudin, S.S.;Salina, M.;Herman, S.H.;Rusop, M.
    • Transactions on Electrical and Electronic Materials
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    • 제13권2호
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    • pp.102-105
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    • 2012
  • The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

용액 공정 기반 NiO/ZnO계 자외선 센서용 재료 특성 연구 (A Study on the Material Characteristics of the NiO/ZnO Ultraviolet Sensor Based on Solution Process)

  • 문성철;이지선;노경재;양성주;이성의
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.508-513
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    • 2017
  • Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.